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Invited Talks 2010
| TP | Vortragender | Veranstaltung | Titel | Datum |
|---|---|---|---|---|
| A1 | Tim Wernicke | E-MRS Fall
Meeting Warsaw 2010 | In-incorporation on semipolar
surfaces for blue-green lasers | 09/
2010 |
| A1 | Tim
Wernicke | Seminar des Fraunhofer-Instituts für Angewandte
Festkörperphysik | Growth of GaInN on semi- and nonpolar
surfaces for blue-green lasers | 07/ 2010 |
| A2/ C1 | Tim D. Germann | Int.
Conference on Metal-Organic Vapor Phase Epitaxy ICMOVPE XV, Lake
Tahoe, USA | MOVPE of a metal-cavity surface-emitting laser
operating cw at room temperature | 05/
2010 |
| A2/ B2 | Prof. Dr. Udo W.
Pohl | 30th Int. Conf on the Physics of Semiconductors
ICPS, Seol, Korea | Ordering effects in self-organized
quantum-dot stacks | 07/ 2010 |
| A2 | Prof. Dr. Udo W.
Pohl | 30th Int. Conf on the Physics of Semiconductors
ICPS, Seol, Korea | Metal-cavity surface-emitting
laser | 07/ 2010 |
| A2/
A4 | Dr. H. Eisele | 30th Int. Conf on the
Physics of Semiconductors ICPS, Seol, Korea | Atomic
structure of InAs/GaAs submonolayer quantum dots | 07/
2010 |
| A2/ A4 | Dr. H.
Eisele | 18th Int. Vacuum Congress IVC18, Beijing,
China | Atomic structure of InAs/GaAs submonolayer quantum
dots | 08/ 2010 |
| A4 | Dr.
H. Eisele | Palo Alto Research Center | Nature
of Surface States and Dislocations on Non-Polar GaN(1-100) Surfaces
Investigated by Scanning Tunneling Microscopy | 01/
2010 |
| A4 | Dr. H.
Eisele | Carnegie-Mellon-University,
Pittsburgh/PA | Cross-sectional scanning tunneling
microscopy of non-polar GaN
surfaces | 01/2010 |
| A4 | Dr.
H. Eisele | University of California at Los
Angeles | Cross-sectional STM and plane-view STM for the
characterization of III-V semiconductor
nano-structures | 02/ 2010 |
| A4 | Dr. H.
Eisele | Paul-Drude-Institute,
Berlin | Semiconductor nano-structure analysis with
scanning tunneling microscopy | 06/
2010 |
| A4 | Dr. P.
Ebert | 18th Int. Vacuum Congress IVC18, Beijing,
China | Cross-sectional scanning tunneling microscopy of
pure and diluted nitride semiconductors | 08/
2010 |
| A4 | Dr. H.
Eisele | International Workshop on Nitride
Semiconductors | Cross-sectional scanning tunneling
microscopy study of non-polar GaN(10-10) surfaces | 09/
2010 |
| A5/ C1 | Prof. Dr. D.
Bimberg | Conference 7610: Quantum Dots and Nanostructures:
Synthesis, Characterization, and Modeling VII at SPIE Photonics
West | Quantum dots for single and entangled photon
emitters | 01/ 2009 |
| A5/
C1 | Prof. Dr. D. Bimberg | International
Symposium Semiconductor Heterostructures: Physics, Technology, Applications, St. Petersburg, Russia, March 2010 | Semiconductor Quantum Dots: Same, Same, but
Different | 03/
2009 |
| A6 | Prof. Dr. Axel
Hoffmann | Photonic West, SPIE Conference, San Francisco,
January 2010 | Radiative and non-radiative recombination
processes in InGaN | 01/ 2010 |
| A6 | Prof. Dr. Axel
Hoffmann | CIMTEC 2010- 5th Forum on New Materials,
Montecatini Terme, Italy | InAs- and GaN-quantum dots:
similarities and differences | 06/
2010 |
| A6 | Prof. Dr. Axel
Hoffmann | International workshop on modern and advanced
phenomena in wurtzite semiconductors, Montpellier,
France | Towards real-world quantum communication: quantum
dots as non-classical light sources | 07/
2010 |
| A6 | Prof. Dr. Axel
Hoffmann | INOW 2010, Beijing, and Chanchun,
China | Quantum dots as non-classical light sources: The
interplay between polarization effects and electron-hole exchange
interaction | 08/
2010 |
| A6 | Prof. Dr. Axel
Hoffmann | Sinople Meeting, IKZ
Berlin | Radiative and non-radiative recombination
processes in InGaN | 02/ 2010 |
| B1 | Prof. Dr. A. Knorr | SPIE
(International Society advancing light based research) OPTO 2010, San Francisco USA | Theory of few photon dy- namics
in electrically pumped light emitting quantum dot
devices | 01 /
2010 |
| B1 | Ermin Malic | Philipps-Universität Marburg,Kolloquium, Marburg,
Deutschland | Halbleiter-Quantenpunkte:
Theoretische Modellsysteme mit Anwendungspotential | 05/ 2010 |
| B1 | Prof. Dr. A. Knorr | NOEKS
(International Workshop on Nonlinear Optics and Excitation Kinetics in
Semiconductors) | Photon Statistics and Entanglement in
Phonon-Assisted Quantum Light Emission From Semiconductor Quantum
Dots | 08/
2010 |
| B1 | Alexander
Carmele | NUSOD (Numerical Simulation of Optoelectronic
Devices) | Quantum Light Emission From Cavity Enhanced
LEDs | 09/ 2010 |
| B1 | W. W. Chow | "IEEE
International Semiconductor Laser Conference, Kyoto,
Japan" | Will Quantum Dots Replace Quantum Wells as
the Active Media of Choice in Future Semiconductor
Lasers? | 09/
2010 |
| B1 | Julia
Kabuss | Universität Paderborn,
Deutschland | Inductive equation of motion approach:
Coherence control of photon statistics | 11/
2010 |
| B1 | Prof. Dr. A.
Knorr | TaCoNa (International Workshop on Theoretical and
Computational Nano-Photonics) | Nonlinear
Optics | 11/ 2010 |
| B2 | Dr.
Kathy Lüdge | Dynamic Days South
America | Complex Dynamics of Semiconductor Quantum-Dot
Lasers subjected to | 07/ 2010 |
| B4 | Prof. Dr. A. Mielke | 81th
Annual Meeting of the International Association of Applied Mathematics
and Mechanics (GAMM 2010), Session on Applied
Analysis | Gradient structures for reaction-diffusion
systems and semiconductor equations | 03/
2010 |
| B4 | Prof. Dr. A.
Mielke | International Conference on Evolution Equations,
Schmitten | Gradient structures for reaction-diffusion
systems and semiconductor models with interface
dynamics | 10/ 2010 |
| B5/
C6 | Dr. A. Vladimirov | SPIE Photonics
Europe | Locking characteristics of a 40 GHz hybrid
mode-locked monolithic quantum dot laser | 04/
2010 |
| C1/ B4 | A.
Mutig | SPIE Photonics West 2010, San Francisco,
USA | High-speed 850 nm oxide confined VCSELs for DATACOM
applications | 01/ 2010 |
| C1/ B4 | Dr. J. A. Lott | SPIE
Photonics West 2010, San Francisco, USA | Electro-optically
modulated VCSELs and RCLEDs | 01/
2010 |
| C1/ B4 | Prof. Dr. N. N.
Ledentsov | SPIE Photonics West 2010, San Francisco,
USA | Optical components for very short reach applications
at 40 Gb/s and beyond | 01/ 2010 |
| C1/ B4 | Dr. J. A. Lott | SPIE
Photonics West 2010, San Francisco, USA | Submonolayer
quantum dots for 850 nm-range VCSELs | 01/
2010 |
| C1/ B4 | A.
Mutig | DPG-Frühjarstagung 2010,
Regensburg | High speed VCSELs for short reach DATACOM
applications | 03/ 2010 |
| C1 | W.
Hofmann | DPG-Frühjarstagung 2010,
Regensburg | Long-Wavelength Vertical-Cavity
Surface-Emitting Lasers with a High-Contrast Grating | 03/
2010 |
| C2 | O. Benson | SPIE
Defense, Security, and Sensing | Room Temperature Single
Photon Sources: Design, Performance, and Applications | 04/
2010 |
| C2 | O.
Benson | SPIE Photonics West, San
Francisco | Hybrid approaches towards single emitter
coupling to optical microresonators | 01/
2010 |
| C4 | A. Krost | SPIE
Photonics West, San Francisco | GaN-based optoelectronics
on Silicon | 01/ 2010 |
| C4 | J. Christen | SPIE
Photonics West, San Francisco | Spatio-time-resolved
Cathodoluminescence Spectroscopy Imaging: Microscopic Correlation of
Real Structure and Recombination Kinetics in InGaN quantum
wells | 01/ 2010 |
| C4 | A.
Krost | TMS 2010, Seattle, WA, USA | Strain
profiling in group-III-Nitride based multilayer
systems | 02/ 2010 |
| C4 | A. Dadgar | 12th
International Conference on Modern Materials and Technologies - 5th
Forum on New Materials: Symposium FJ Materials and Technologies for
Solid State Lighting, (CIMTEC 2010), Montpellier,
France | Latest developments in MOVPE of GaN on Si
substrates | 07/
2010 |
| C4 | A. Krost | 12th
International Conference on Modern Materials and Technologies - 5th
Forum on New Materials: Symposium FJ Materials and Technologies for
Solid State Lighting, (CIMTEC 2010), Montpellier,
France | GaN optoelectronics on silicon | 07/
2010 |
| C4 | J.
Christen | Microscopy & Microanalysis M&M 2010,
Portland, OR, USA | Spatio-time-resolved
cathodoluminescence spectroscopy imaging: microscopic recombination
kinetics in semi-polar InGaN quantum wells | 08/
2010 |
| C4 | J.
Christen | International Nano-Optoelectronics Workshop iNOW
2010, Beijing/Changchun, China | Spatio-time-resolved
Cathodoluminescence Spectroscopy Imaging: Microscopic Correlation of
Real Structure and Recombination Kinetics in
Nanostructures | 08/ 2010 |
| C5 | Kristijan
Posilovic | SPIE-Conference on Novel In-Plane Semiconductor
Lasers IX | High-power high-brightness semiconductor lasers
based on novel waveguide concepts | 02/
2010 |
| C5 | Vitaly
Shchukin | SPIE-Conference on Physics and Simulation of
Optoelectronic Devices XVIII | Modeling of
photonic-crystal-based high-power high-brightness semiconductor
lasers | 02/ 2010 |
| C5 | Vladimir Kalosha | DPG
Frühjahrstagung, Regensburg, Deutschland | High-brightness
edge-emitting semiconductor lasers based on concepts of photonic band
crystal and titled wave lasers | 03/
2010 |
| C6 | D.
Bimberg | 12th International Conference for Transparent
Optical Networks (ICTON) | Four-wave mixing in 1.3 µm
quantum dot semiconductor optical amplifiers | 06/
2010 |
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