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Invited Talks 2010
| TP | Vortragender | Veranstaltung | Titel | Datum |
|---|---|---|---|---|
| A1 | Tim Wernicke | E-MRS Fall Meeting Warsaw 2010 | In-incorporation on semipolar surfaces for blue-green lasers | 09/ 2010 |
| A1 | Tim Wernicke | Seminar des Fraunhofer-Instituts für Angewandte Festkörperphysik | Growth of GaInN on semi- and nonpolar surfaces for blue-green lasers | 07/ 2010 |
| A2/ C1 | Tim D. Germann | Int. Conference on Metal-Organic Vapor Phase Epitaxy ICMOVPE XV, Lake Tahoe, USA | MOVPE of a metal-cavity surface-emitting laser operating cw at room temperature | 05/ 2010 |
| A2/ B2 | Prof. Dr. Udo W. Pohl | 30th Int. Conf on the Physics of Semiconductors ICPS, Seol, Korea | Ordering effects in self-organized quantum-dot stacks | 07/ 2010 |
| A2 | Prof. Dr. Udo W. Pohl | 30th Int. Conf on the Physics of Semiconductors ICPS, Seol, Korea | Metal-cavity surface-emitting laser | 07/ 2010 |
| A2/ A4 | Dr. H. Eisele | 30th Int. Conf on the Physics of Semiconductors ICPS, Seol, Korea | Atomic structure of InAs/GaAs submonolayer quantum dots | 07/ 2010 |
| A2/ A4 | Dr. H. Eisele | 18th Int. Vacuum Congress IVC18, Beijing, China | Atomic structure of InAs/GaAs submonolayer quantum dots | 08/ 2010 |
| A4 | Dr. H. Eisele | Palo Alto Research Center | Nature of Surface States and Dislocations on Non-Polar GaN(1-100) Surfaces Investigated by Scanning Tunneling Microscopy | 01/ 2010 |
| A4 | Dr. H. Eisele | Carnegie-Mellon-University, Pittsburgh/PA | Cross-sectional scanning tunneling microscopy of non-polar GaN surfaces | 01/2010 |
| A4 | Dr. H. Eisele | University of California at Los Angeles | Cross-sectional STM and plane-view STM for the characterization of III-V semiconductor nano-structures | 02/ 2010 |
| A4 | Dr. H. Eisele | Paul-Drude-Institute, Berlin | Semiconductor nano-structure analysis with scanning tunneling microscopy | 06/ 2010 |
| A4 | Dr. P. Ebert | 18th Int. Vacuum Congress IVC18, Beijing, China | Cross-sectional scanning tunneling microscopy of pure and diluted nitride semiconductors | 08/ 2010 |
| A4 | Dr. H. Eisele | International Workshop on Nitride Semiconductors | Cross-sectional scanning tunneling microscopy study of non-polar GaN(10-10) surfaces | 09/ 2010 |
| A5/ C1 | Prof. Dr. D. Bimberg | Conference 7610: Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII at SPIE Photonics West | Quantum dots for single and entangled photon emitters | 01/ 2009 |
| A5/ C1 | Prof. Dr. D. Bimberg | International Symposium Semiconductor Heterostructures: Physics, Technology, Applications, St. Petersburg, Russia, March 2010 | Semiconductor Quantum Dots: Same, Same, but Different | 03/ 2009 |
| A6 | Prof. Dr. Axel Hoffmann | Photonic West, SPIE Conference, San Francisco, January 2010 | Radiative and non-radiative recombination processes in InGaN | 01/ 2010 |
| A6 | Prof. Dr. Axel Hoffmann | CIMTEC 2010- 5th Forum on New Materials, Montecatini Terme, Italy | InAs- and GaN-quantum dots: similarities and differences | 06/ 2010 |
| A6 | Prof. Dr. Axel Hoffmann | International workshop on modern and advanced phenomena in wurtzite semiconductors, Montpellier, France | Towards real-world quantum communication: quantum dots as non-classical light sources | 07/ 2010 |
| A6 | Prof. Dr. Axel Hoffmann | INOW 2010, Beijing, and Chanchun, China | Quantum dots as non-classical light sources: The interplay between polarization effects and electron-hole exchange interaction | 08/ 2010 |
| A6 | Prof. Dr. Axel Hoffmann | Sinople Meeting, IKZ Berlin | Radiative and non-radiative recombination processes in InGaN | 02/ 2010 |
| B1 | Prof. Dr. A. Knorr | SPIE (International Society advancing light based research) OPTO 2010, San Francisco USA | Theory of few photon dy- namics in electrically pumped light emitting quantum dot devices | 01 / 2010 |
| B1 | Ermin Malic | Philipps-Universität Marburg,Kolloquium, Marburg, Deutschland | Halbleiter-Quantenpunkte: Theoretische Modellsysteme mit Anwendungspotential | 05/ 2010 |
| B1 | Prof. Dr. A. Knorr | NOEKS (International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors) | Photon Statistics and Entanglement in Phonon-Assisted Quantum Light Emission From Semiconductor Quantum Dots | 08/ 2010 |
| B1 | Alexander Carmele | NUSOD (Numerical Simulation of Optoelectronic Devices) | Quantum Light Emission From Cavity Enhanced LEDs | 09/ 2010 |
| B1 | W. W. Chow | "IEEE International Semiconductor Laser Conference, Kyoto, Japan" | Will Quantum Dots Replace Quantum Wells as the Active Media of Choice in Future Semiconductor Lasers? | 09/ 2010 |
| B1 | Julia Kabuss | Universität Paderborn, Deutschland | Inductive equation of motion approach: Coherence control of photon statistics | 11/ 2010 |
| B1 | Prof. Dr. A. Knorr | TaCoNa (International Workshop on Theoretical and Computational Nano-Photonics) | Nonlinear Optics | 11/ 2010 |
| B2 | Dr. Kathy Lüdge | Dynamic Days South America | Complex Dynamics of Semiconductor Quantum-Dot Lasers subjected to | 07/ 2010 |
| B4 | Prof. Dr. A. Mielke | 81th Annual Meeting of the International Association of Applied Mathematics and Mechanics (GAMM 2010), Session on Applied Analysis | Gradient structures for reaction-diffusion systems and semiconductor equations | 03/ 2010 |
| B4 | Prof. Dr. A. Mielke | International Conference on Evolution Equations, Schmitten | Gradient structures for reaction-diffusion systems and semiconductor models with interface dynamics | 10/ 2010 |
| B5/ C6 | Dr. A. Vladimirov | SPIE Photonics Europe | Locking characteristics of a 40 GHz hybrid mode-locked monolithic quantum dot laser | 04/ 2010 |
| C1/ B4 | A. Mutig | SPIE Photonics West 2010, San Francisco, USA | High-speed 850 nm oxide confined VCSELs for DATACOM applications | 01/ 2010 |
| C1/ B4 | Dr. J. A. Lott | SPIE Photonics West 2010, San Francisco, USA | Electro-optically modulated VCSELs and RCLEDs | 01/ 2010 |
| C1/ B4 | Prof. Dr. N. N. Ledentsov | SPIE Photonics West 2010, San Francisco, USA | Optical components for very short reach applications at 40 Gb/s and beyond | 01/ 2010 |
| C1/ B4 | Dr. J. A. Lott | SPIE Photonics West 2010, San Francisco, USA | Submonolayer quantum dots for 850 nm-range VCSELs | 01/ 2010 |
| C1/ B4 | A. Mutig | DPG-Frühjarstagung 2010, Regensburg | High speed VCSELs for short reach DATACOM applications | 03/ 2010 |
| C1 | W. Hofmann | DPG-Frühjarstagung 2010, Regensburg | Long-Wavelength Vertical-Cavity Surface-Emitting Lasers with a High-Contrast Grating | 03/ 2010 |
| C2 | O. Benson | SPIE Defense, Security, and Sensing | Room Temperature Single Photon Sources: Design, Performance, and Applications | 04/ 2010 |
| C2 | O. Benson | SPIE Photonics West, San Francisco | Hybrid approaches towards single emitter coupling to optical microresonators | 01/ 2010 |
| C4 | A. Krost | SPIE Photonics West, San Francisco | GaN-based optoelectronics on Silicon | 01/ 2010 |
| C4 | J. Christen | SPIE Photonics West, San Francisco | Spatio-time-resolved Cathodoluminescence Spectroscopy Imaging: Microscopic Correlation of Real Structure and Recombination Kinetics in InGaN quantum wells | 01/ 2010 |
| C4 | A. Krost | TMS 2010, Seattle, WA, USA | Strain profiling in group-III-Nitride based multilayer systems | 02/ 2010 |
| C4 | A. Dadgar | 12th International Conference on Modern Materials and Technologies - 5th Forum on New Materials: Symposium FJ Materials and Technologies for Solid State Lighting, (CIMTEC 2010), Montpellier, France | Latest developments in MOVPE of GaN on Si substrates | 07/ 2010 |
| C4 | A. Krost | 12th International Conference on Modern Materials and Technologies - 5th Forum on New Materials: Symposium FJ Materials and Technologies for Solid State Lighting, (CIMTEC 2010), Montpellier, France | GaN optoelectronics on silicon | 07/ 2010 |
| C4 | J. Christen | Microscopy & Microanalysis M&M 2010, Portland, OR, USA | Spatio-time-resolved cathodoluminescence spectroscopy imaging: microscopic recombination kinetics in semi-polar InGaN quantum wells | 08/ 2010 |
| C4 | J. Christen | International Nano-Optoelectronics Workshop iNOW 2010, Beijing/Changchun, China | Spatio-time-resolved Cathodoluminescence Spectroscopy Imaging: Microscopic Correlation of Real Structure and Recombination Kinetics in Nanostructures | 08/ 2010 |
| C5 | Kristijan Posilovic | SPIE-Conference on Novel In-Plane Semiconductor Lasers IX | High-power high-brightness semiconductor lasers based on novel waveguide concepts | 02/ 2010 |
| C5 | Vitaly Shchukin | SPIE-Conference on Physics and Simulation of Optoelectronic Devices XVIII | Modeling of photonic-crystal-based high-power high-brightness semiconductor lasers | 02/ 2010 |
| C5 | Vladimir Kalosha | DPG Frühjahrstagung, Regensburg, Deutschland | High-brightness edge-emitting semiconductor lasers based on concepts of photonic band crystal and titled wave lasers | 03/ 2010 |
| C6 | D. Bimberg | 12th International Conference for Transparent Optical Networks (ICTON) | Four-wave mixing in 1.3 µm quantum dot semiconductor optical amplifiers | 06/ 2010 |
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