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Papers 2008
| No. | Project(s) | Title | Authors | Journal |
|---|---|---|---|---|
| 1 | A1 | Near band edge and defect emissions from epitaxial lateral overgrown a-plane GaN with different stripe orientations | C. Netzel, T. Wernicke, U. Zeimer, F. Brunner, M. Weyers, and M. Kneissl | J. Cryst. Growth 310, 8 (2008) |
| 2 | A1 | Microstructure of a-plane (2-1-10) GaN ELOG stripe patterns with different in-plane orientation | T. Wernicke, U. Zeimer, M. Herms, M. Weyers, M. Kneissl, G. Irmer | J. of Materials Science, (2008) |
| 3 | A1 | Anisotropic strain on phonons in a-plane GaN layers studied by raman scattering | G. Irmer, T. Brumme, M. Herms, T. Wernicke, M. Kneissl, M. Weyers | J. of Materials Science,(2008) |
| 4 | A1/ C4 | A-plane GaN epitaxial lateral overgrowth structures: Growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy | B. Bastek, F. Bertram, J. Christen, T. Wernicke, M. Weyers, and M. Kneissl | Appl. Phys. Lett. 92, 212111 (2008) |
| 5 | A1 | Semipolar GaN grown on m-plane sapphire using MOVPE | T. Wernicke, C. Netzel, M. Weyers, and M. Kneissl | phys. stat. sol. (c), No. 6, 1815-1817 (2008) |
| 6 | A1 | Indium Nitride Quantum Dot growth modes in Metal-Organic Vapour Phase Epitaxy | Christian Meissner, Simon Ploch, Martin Leyer, Markus Pristovsek and Michael Kneissl | J. Cryst. Growth 310, 4959 (2008) |
| 7 | A1 | The critical thickness of InGaN on (0001) GaN | Martin Leyer, Joachim Stellmach, Christian Meissner, Markus Pristovsek, Michael Kneissl | J. Cryst. Growth 310, 4913 (2008) |
| 8 | A1 | Influence of the growth temperature on the structural and optical properties of InGaN multi-quantum-wells for 405 nm laser diodes | V. Hoffmann, A. Knauer, F. Brunner, U. Zeimer, S. Einfeldt, M. Weyers, M. Kneissl, G. Tränkle, J.R. van Look, K. Kazlauskas, S. Jursenas | J. Cryst. Growth 310, 4525 (2008) |
| 9 | A1 | Growth Mode and Shape of InN Quantum Dots and Nanostructures grown by Metal Organic Vapour Phase Epitaxy | S. Ploch, C. Meissner, M. Pristovsek, M. Kneissl | phys. stat .sol. c 6, s574 (2008) |
| 10 | A2 | Temperature-stable operation of a quantum dot semiconductor disk laser | T. Germann, A. Strittmatter, U. W. Pohl, J. Pohl, D. Bimberg, J. Rautiainen, M. Guina, O.G. Okhotnikov | Appl. Phys. Lett. 93, 051104 (2008) |
| 11 | A2 | High-power semiconductor disk laser based on InAs/GaAs submonolayer quantum dots | T. D. Germann, A. Strittmatter, J. Pohl, U. W. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. G. Okhotnikov | Appl. Phys. Lett. 92, 101123 (2008) |
| 12 | A2 / C1 | 1040 nm vertical external cavity surface emitting laser based on InGaAs quantum dots grown in Stranski-Krastanow regime | A. Strittmatter, T.D. Germann, J. Pohl, U.W. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O.G. Okhotnikov | Electron. Lett. 44, 290 (2008) |
| 13 | A2 | Progress in epitaxial growth and performance of quantum dot and quantum wire lasers | N.N. Ledentsov, D. Bimberg, and Z.I. Alferov | Journal of Lightwave Technology 26 (9-12) 1540 (2008) |
| 14 | A2/ C6 | Quantum-dot semiconductor disk lasers | T.D. Germann, A. Strittmatter, U.W. Pohl, D. Bimberg, J. Rautiainen, M. Guina, O.G. Okhotnikov | J. Crystal Growth 310, 5182-5186 (2008) |
| 15 | A2 | Suppression of the wavelength blue shift during overgrowth of InGaAs-based quantum dots | A. Strittmatter, T.D. Germann, T. Kettler, K. Posilovic, J. Pohl, U.W. Pohl and D. Bimberg | J. Crystal Growth 310, 5066-5068 (2008) |
| 16 | A3/ A2 | Improved optical confinement in 1.55 µm InAs/GaInAsP quantum dot lasers grown by MOVPE | D. Franke, P. Harde, J. Kreissl, M. Moehrle, H. Kuenzel, U.W. Pohl and D. Bimberg | Proc. 15th International Conf. on InP and Related Materials (IPRM'08), Versailles (France); ISBN 1-4244-0874-1, ISN 1092-8669, p. 559-562 |
| 17 | A4 | Nitrogen-induced intermixing of InAsN quantum dots with the GaAs matrix | L. Ivanova, H. Eisele, A. Lenz, R. Timm, M. Dähne, O. Schumann, L. Geelhaar and H. Riechert | Appl. Phys. Lett. 92, 203101 (2008) |
| 18 | A4 | Quantum ring formation and antimony segregation in GaSb/GaAs nanostructures | R. Timm, A. Lenz, H. Eisele, L. Ivanova and M. Dähne; G. Balakrishnan and D. L. Huffaker; I. farrer and D. A. Ritchie | J. Vac. Sci. Technol. B, Vol. 26, Issue 4 (2008) |
| 19 | A4/ A2 | Structure of InAs quantum dots-in-a-well nanostructures | A. Lenz, H. Eisele, R. Timm, L. Ivanova, H.-Y. Liu, M. Hopkinson, U.W. Pohl, and M. Dähne | Physica E 40, 1988 (2008) |
| 20 | A4 | Surface states and origin of the Fermi level pinning on non-polar GaN-surfaces | L. Ivanova, S. Borisova, H. Eisele, M. Dähne, A. Laubsch, and Ph. Ebert | Appl. Phys. Lett. 93, 192110 (2008) |
| 21 | A4 | Self-organized formation of GaSb/GaAs quantum rings | R. Timm, H. Eisele, A. Lenz, L. Ivanova, G. Balakrishnan, D.L. Huffaker, and M. Dähne | Phys. Rev. Lett.101, 256101 (2008) |
| 22 | A4 | Change of InAs/GaAs quantum dot shape and composition during capping | H. Eisele, A. Lenz, R. Heitz, R. Timm, M. Dähne, Y. Temko, T. Suzuki, and K. Jacobi | J. Appl. Phys. 104, 124301 (2008) |
| 23 | A5/ A6 | Energy transfer in close-packed PbS nanocrystal films | V. Rinnerbauer, H.-J. Egelhaaf, K. Hingerl, P. Zimmer, S. Werner, T. Warming, A. Hoffmann, M. Kovalenko, W. Heiss, G. Hesser, and F. Schaffler | Phys. Rev. B 77, 085322 (2008) |
| 24 | A5/ A6 | Polarized emission lines from single InGaN/GaN quantum dots: Role of the valence-band structure of wurtzite Group-III nitrides | M.Winkelnkemper, R. Seguin, S. Rodt, A. Schliwa, L. Reißmann, A. Strittmatter, A. Hoffmann, D. Bimberg | PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Volume: 40 (2008) |
| 25 | A5 | Magnetooptical properties of quantum dots: Influence of the piezoelectric field | Krapek V, Schliwa A, Bimberg D | PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Volume: 40 (2008) |
| 26 | A5 | GaN/AlN quantum dots for single qubit emitters | Winkelnkemper M, Seguin R, Rodt S, et al. | JOURNAL OF PHYSICS-CONDENSED MATTER, Volume: 20 (2008) |
| 27 | A5 | Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN | Rinke P, Winkelnkemper M, Qteish A, et al. | Phys. Rev. B 77, 075202 (2008) |
| 28 | A5/ A6 | Decay dynamics of neutral and charged excitonic complexes in single InAs/GaAs quantum dots | M. Feucker, R. Seguin, S. Rodt, A. Hoffmann, D. Bimberg | Appl. Phys. Lett. 92, 063116 (2008) |
| 29 | A5 | Onion-like growth and inverted many-particle energies in quantum dots | D. Bimberg | Applied Surface Science 255 799 (2008) |
| 30 | A5/ A6 | Origin of the broad lifetime distribution of localized excitons in InGaN/GaN quantum dots | M. Winkelnkemper, M. Dworzak, T.P. Bartel, A. Strittmatter, A. Hoffmann, and D. Bimberg | Phys. Stat. Sol. (b) 245 (12) 2766 (2008) |
| 31 | A5 | Excitonic Mott transition in type-II quantum dots | B. Bansal, M. Hayne, M. Geller, D. Bimberg, V.V. Moshchalkov | Physical Review B 77 241304 (2008) |
| 32 | A5 | Effect of excitation level on the optical properties of GaAs/AlGaO | Nadtochiy, A.M; Blokhin, S.A.; Sakharov, A.V.; Kulagina, M.M.; Zadiranov, Yu.M.; Gordeev, N.Yu.; Maksimov, M.V.; Ustinov, V.M. ; Ledentsov, N.N.; Stock, E.; Warming, T.; | Semiconductors (Oct. 2008), vol.42, no.10, p. 1228-33 |
| 33 | A5/ A2 | Size-tunable exchange interaction in InAs/GaAs quantum dots | U.W. Pohl, A. Schliwa, R. Seguin, S. Rodt, K. Pötschke, D. Bimberg | Adv. in Sol. State Phys. (R. Haug, Ed.) 46 45 (2008) |
| 34 | A5 | Theory of Excitons in InGaAs/GaAs Quantum Dots | Schliwa, A, and M Winkelnkemper, D. Bimberg (Ed.) | Nanoscience and Technology, Springer Verlag, Berlin, Heidelberg, 2008, ISBN 978-3-540-77898-1 |
| 35 | A5 | Magnetooptical properties of quantum dots: Influence of the piezoelectric field | Křápek, Vlastimil, Andrei Schliwa, and Dieter Bimberg | Physica E: Low-dimensional Systems and Nanostructures 40, no. 5 (March 2008): 1163-1165 |
| 36 | A6 | Model of Raman scattering in self-assembled InAs/GaAs quantum dots | S.N. Klimin, V.M. Fomin, J.T. Devreese, and D. Bimberg | Physical Review B 77 45307 (2008) |
| 37 | A6 | Phonon interaction in InGaAs/GaAs quantum dots | S. Werner, P. Zimmer, N.N. Ledentsov, A. Hoffmann | Proc. on MRS meeting, Spring 2008 |
| 38 | A6 | Optical characterization of InN layers grown by high-pressure chemical vapour deposition | M. Alevli, R. Ataley, G. Durkaya, A. Weesekara, G.U. Perera and N. Dietz, R. Kirste, A. Hoffmann | J. Vac. Sci. Technol. A 26 (2008), 1023 |
| 39 | A6 | Structural and optical inhomogeneities of Fe doped GaN grown by HVPE | E. Malguth, A. Hoffmann, M.R. Phillips | J. Appl. Phys. 104 (2008), 123712 |
| 40 | A6/ A5 | GaN/AlN quantum dots for single qubit emitters | M. Winkelnkemper, R. Seguin, S. Rodt, A. Hoffmann, D. Bimberg | JPCM 20 (2008), 454211 |
| 41 | A6 | Optical properties of III-V quantum dots | Udo W. Pohl, Sven Rodt, Axel Hoffmann | Semiconductor Nanostructures, ed. D. Bimberg, Springer Verlag Berlin Heidelberg New York 2008, ISBN 978-3-540-77898, p 269-300 |
| 42 | B1 | Optical control and decoherence of spin qubits in semiconductor quantum dots | P.Machnikovski, A.Grodecka, C.Weber, A.Knorr | Materials Science Poland, 26, 851 (2008) |
| 43 | B1 | Optical solitons in semiconductor quantum dot waveguides | G. T. Adamashvili, A. Knorr, and C. Weber | Eur. Phys. J. D 47, 113-117 (2008) |
| 44 | B1 | Theory of electron-phonon interactions on nanoscales: semiconductor surfaces and two dimensional electron gases | N. Buecking, S.Butscher, M. Richter, C.Weber, S. Declair, M. Woerner, Kreimann, P. Kratzer, M. Scheffler, and A. Knorr | Proceedings of SPIE 6892, 689209 (2008) |
| 45 | B1 | "Role of electron-phonon scattering on the vacuum Rabi splitting of a single-quantum dot and a photonic crystal nanocavity" | F. Milde, A. Knorr, and S. Hughes | Phys. Rev. B 78, 035330 (2008) |
| 46 | B1 | Influence of non-Markovian relaxation processes on self-induced transparency: memory function theory for optical solitons | G. T. Adamashvili, D. J. Kaup, A. Knorr, and C. Weber | Phys. Rev. A 78,013840 (2008) |
| 47 | B1 | Linking density functional and density-matrix theory: Picosecond electron relaxation at the Si(100) surface | N. Bücking, P. Kratzer, M. Scheffler, and A. Knorr | Phys. Rev. B 77, 233305 (2008) |
| 48 | B1 | Theory of electron-phonon interactions on nanoscales: semiconductor surfaces and two dimesional electron gases | N. Buecking, S. Butscher, M. Richter, C. Weber, S. Declair, M. Woerner, Kreimann, P. Kratzer, M. Scheffler, and A. Knorr | Proceedings of SPIE 6892, 689209 (2008) |
| 49 | B2 | Delay stabilization of rotating waves near fold bifurcation and application to all-optical control of a semiconductor laser | B. Fiedler, S. Yanchuk, V. Flunkert, P. Hövel, H. J. Wünsche, and E. Schöll | Phys. Rev. E 77, 066207 (2008) |
| 50 | B2 / B1 / C6 | Turn-on dynamics and modulation response in semiconductor quantum dot lasers | K. Lüdge, M. J. P. Borman, E. Malic, P. Hövel, M. Kuntz, D. Bimberg, A. Knorr and E. Schöll | Phys. Rev. B 78, 035316 (2008) |
| 51 | B2 / B1 / C6 | Dynamic response of quantum dot lasers – Influence of nonlinear electron-electron scattering | K. Lüdge, E. Malic, M. Kuntz, D. Bimberg, A. Knorr, E. Schöll | IEEE Proc. of CLEO/QELSC, San Jose, USA, May 2008 Vol. 1-9 981 (2008) |
| 52 | B2 / B1 / C6 | Decoupled electron and hole dynamics in the turn-on behavior of quantum-dot lasers | K. Lüdge, E. Malic, M. Kuntz, D. Bimberg, E. Schöll | IEEE Proc. of ISLC, Sorrento, Italy, September 2008 CFP08SLC-CDR MC4 (2008) |
| 53 | B4 | Existence of bounded steady state solutions to spin-polarized drift-diffusion systems | Glitzky, Annegret; Gärtner, Klaus | WIAS, Preprint No. 1357 |
| 54 | B4 | Dynamic simulation of high brightness semiconductor lasers | M. Lichtner, M. Radziuna, U. Bandelow, M. Spreemann and H. Wenzel | Proceedings of the 8th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD '08 |
| 55 | B5 | Chaotic soliton walk in periodically modulated media | D. Turaev, M. Radziunas, and A.G. Vladimirov | Phys. Rev. E 77, 065201(R) (2008) |
| 56 | B5 | Solitary-wave solutions for few-cycle optical pulses | S. Amiranashvili, A.G. Vladimirov, and U. Bandelow | Phys. Rev. A 77, 063821 (2008) |
| 57 | B5 | Numerical algorithms for simulation of multisection lasers by using traveling wave model | R. Ciegis, M. Radziunas, and M. Lichtner | Math. Model. Anal. 13, 327–348 (2008) |
| 58 | C1/ A5 | Effect of excitation level on the optical properties of GaAs/AlGaO microdisks with an active region containing InAs quantum dots | A.M. Nadtochiy, S.A. Blokhin, A.V. Sakharov, M.M. Kulagina, Y.M.Zadiranov, N.Y. Gordeev, M.V. Maksimov, V.M. Ustinov, N.N. Ledentsov, E. Stock, T. Warming, and D. Bimberg | Semiconductors 42, 1228-1233 (2008) |
| 59 | C1/ B4 | 120° C 20 Gbit/s Operation of 980 nm Single Mode VCSEL | A. Mutig, G. Fiol, P. Moser, F. Hopfer, M. Kuntz V.A. Shchukin, N.N. Ledentsov, D. Bimberg, S.S. Mikhrin, I.L. Krestnikov, D.A. Livshits, and A.R. Kovsh | IEEE Proc. of ISLC, Sorrento, Italy, September 2008 CFP08SLC-CDR MB2 (2008) |
| 60 | C1/ B4 | 120° C 20 Gbit/s operation of 980 nm VCSEL | A. Mutig, G. Fiol, P. Moser, D. Arsenijevic, V.A. Shchukin, N.N. Ledentsov, S.S. Mikhrin, I.L. Krestnikov, D.A. Livshits, A.R. Kovsh, F. Hopfer, and D. Bimberg | Electr. Lett. 44 (22) 1305 (2008) |
| 61 | C1/ C6 | 40 GHz small-signal cross-gain modulation in 1.3 μm quantum dot semiconductor optical amplifiers | C. Meuer, J. Kim, M. Laemmlin, S. Liebich, D. Bimberg, A. Capua, G. Eisenstein, R. Bonk, T. Vallaitis, J. Leuthold, A.R. Kovsh, and I.L. Krestnikov | Appl. Phys. Lett. 93 51110 (2008) |
| 62 | C1/ C6 | Enhancing small-signal cross-gain modulation of quantum-dot optical amplifiers by injecting carriers to excited states | J. Kim, M. Laemmlin, C. Meuer, S. Liebich, D. Bimberg, and G. Eisenstein | Proc. of OFC/NFOEC 2008, San Diego, USA, February 2008 (Optical Society of America) OTuC3 (2008) |
| 63 | C1/ B4 | High-speed directly and indirectly modulated VCSELs | F. Hopfer, A. Mutig, A. Strittmatter, G. Fiol, P. Moser, D. Bimberg, V.A. Shchukin, N.N. Ledentsov, J.A. Lott, H. Quast, M. Kuntz, S.S. Mikhrin, I.L. Krestnikov, D.A. Livshits, A.R. Kovsh, C. Bornholdt | IEEE Proc. of IPRM-20, Versailles, France, May 2008 CFP08IIP-CDR (2008) |
| 64 | C1 | Nonlinear properties of quantum dot semiconductor optical amplifiers at 1.3 μm | D. Bimberg, C. Meuer, M. Laemmlin, S. Liebich, J. Kim, A. Kovsh, I. Krestnikov, G. Eisenstein | Chinese Optics Letters 6 (10) 724 (2008) |
| 65 | C1 | Quantum dot semiconductor optical amplifiers for wavelength conversion using cross-gain modulation | D. Bimberg, C. Meuer, M. Laemmlin, S. Liebich, J. Kim, G. Eisenstein, and A.R. Kovsh | IEEE Proc. of ICTON, Athens, Greece, 2008 2 141 (2008) |
| 66 | C1 | Single-lobe single-wavelength lasing in ultrabroad-area vertical-cavity surface-emitting lasers based on the integrated filter concept | S.A. Blokhin, L.Y. Karachinsky, I.I. Novikov, N.Y. Gordeev, A.V. Sakharov, N.A. Maleev, A.G. Kuzmenkov, Y.M. Shernyakov, M.V. Maximov, A.R. Kovsh, S.S. Mikhrin, V.A. Shchukin, N.N. Ledentsov, V.M. Ustinov, and D. Bimberg | IEEE Journal of Quantum Electronics 44 (8) 724 (2008) |
| 67 | C1 | Static gain saturation in quantum dot semiconductor optical amplifiers | C. Meuer, J. Kim, M. Laemmlin, S. Liebich, A. Capua, G. Eisenstein, A.R. Kovsh, S.S. Mikhrin, I.L. Krestnikov, and D. Bimberg | Optics Express 16 (11) 8269 (2008) |
| 68 | C1 | Static gain saturation model of quantum-dot semiconductor optical amplifiers | J. Kim, M. Laemmlin, C. Meuer, D. Bimberg, and G. Eisenstein | IEEE Journal of Quantum Electronics 44 (7) 658 (2008) |
| 69 | C1 | Ultrahigh–speed electrooptically–modulated VCSELs: Modeling and experimental results | V.A. Shchukin, N.N. Ledentsov, J.A. Lott, H. Quast, F. Hopfer, L.Ya. Karachinsky, M. Kuntz, P. Moser, A. Mutig, A. Strittmatter, V.P. Kalosha, and D. Bimberg | Proc. of OPTO 2008 at Photonics West, San Jose, USA, January 2008 |
| 70 | C5 | Quantum dot based nanophotonics and nanoelectronics | D. Bimberg | Electr. Lett. 44 (3) 168 (2008) |
| 71 | C5 | From k•p to atomic calculations applied to semiconductor heterostructures | L. Pedesseau, C. Cornet, F. Doré, J. Even, A. Schliwa, and D. Bimberg | Journal of Physics: Conf. Ser. 107 12009 (2008) |
| 72 | C5/ A2 | High brightness and ultra-narrow beam 850 nm GaAs/AlGaAs photonic band crystal lasers and first uncoupled PBC single-mode arrays | T. Kettler, K. Posilovic, J. Fricke, P. Ressel, A. Ginolas, U.W. Pohl, V.A. Shchukin, N.N. Ledentsov, D. Bimberg, J. Jönsson, M. Weyers, G. Erbert, and G. Tränkle | IEEE Proc. of ISLC, Sorrento, Italy, September 2008 CFP08SLC-CDR ThC6 (2008) |
| 73 | C5 | High-power low-beam divergence edge-emitting semiconductor lasers with 1- and 2-D photonic bandgap crystal waveguide | M.V. Maximov, Y.M. Shernyakov, I.I. Novikov, N.Yu. Gordeev, L.Ya. Karachinsky, U. Ben-Ami, D. Bortman-Arbiv, A. Sharon, V.A. Shchukin, N.N. Ledentsov, T. Kettler, K. Posilovic, and D. Bimberg | IEEE Journal of Selected Topics in Quantum Electronics 14 (4) 1113 (2008) |
| 74 | C5 | High-power one-, two-, and three-dimensional photonic crystal edge-emitting laser diodes for ultrahigh brightness applications | N.Yu. Gordeev, M.V. Maximov, Y.M. Shernyakov, I.I. Novikov, L.Ya. Karachinsky, V.A. Shchukin, T. Kettler, K. Posilovic, N.N. Ledentsov, D. Bimberg, R. Duboc, A. Sharon, D.B. Arbiv, U. Ben-Ami | Proc. SPIE, Vol. 6889, 68890W (2008) |
| 75 | C5 | Tilted cavity concept for the high-power wavelength stabilized diode lasers | L.Ya. Karachinsky, I.I. Novikov, G. Fiol, M. Kuntz, Yu.M. Shernyakov, N.Yu. Gordeev, M.V. Maximov, M.B. Lifshits, T. Kettler, K. Posilovic, V.A. Shchukin, N.N. Ledentsov, S.S. Mikhrin, D. Bimberg | Proc. of SPIE: 6th Int. Conf. on Photonics, Devices, and Systems IV, Prague, August 2008, 7138, pp. 713804 (2008) |
| 76 | C5/ A2 | Ultrahigh-brightness 850 nm GaAs/AlGaAs photonic crystal laser diodes | K. Posilovic, T. Kettler, V.A. Shchukin, N.N. Ledentsov, U.W. Pohl, D. Bimberg, J. Fricke, A. Ginolas, G. Erbert, G. Tränkle, J. Jönsson, and M. Weyers | Appl. Phys. Lett. 93 221102 (2008) |
| 77 | C6 | High speed cross gain modulation using quantum dot semiconductor optical amplifiers at 1.3 μm | C. Meuer, M. Laemmlin, S. Liebich, J. Kim, D. Bimberg, A. Capua, G. Eisenstein, R. Bonk, T. Vallaitis, and J. Leuthold | IEEE Proc. of CLEO/QELSC, San Jose, USA, May 2008 Vol. 1-9 1445 (2008) |
| 78 | C6 | Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K) | Karachinsky, L.Y., Novikov, II, Y.M. Shernyakov, N.Y. Gordeev, A.S. Payusov, M.V. Maximov, S.S. Mikhrin, M.B. Lifshits, V.A. Shchukin, P.S. Kop'ev, N.N. Ledentsov, and D. Bimberg | Semiconductors 43 (5) 680 (2009) |
| 79 | C6 | A wavelength conversion scheme based on a quantum-dot semiconductor optical amplifier and a delay interferometer | S. Sygletos, R. Bonk, P. Vorreau, T. Vallaitis, J. Wang, W. Freude, J. Leuthold, C. Meuer, D. Bimberg, R. Brenot, F. Lelarge, G. H. Duan | IEEE Proc. of ICTON, Athens, Greece, 2008 Vol. 2 149 (2008) |
| 80 | C6 | An interferometric configuration for performing cross-gain modulation with improved signal quality | R. Bonk, P. Vorreau, S. Sygletos, T. Vallaitis, J. Wang, W. Freude, J. Leuthold, R. Brenot, F. Lelarge, G.H. Duan, C. Meuer, S. Liebich, M. Laemmlin, D. Bimberg | Proc. of OFC/NFOEC 2008, San Diego, USA, February 2008 |
| 81 | C6/ A2/ C1 | Characterisation of an InAs quantum dot semiconductor disk laser | P. Schlosser, S. Calvez, J.E. Hastie, S. Jin, T.D. Germann, A. Strittmatter, U.W. Pohl, D. Bimberg, and M.D. Dawson | IEEE Proc. of CLEO/QELSC, San Jose, USA, May 2008 Vol. 1-9 1810 (2008) |
| 82 | C6/ B1 | InGaAs quantum dot population and polarisation dynamics for ultrafast pulse train amplification | J. Gomis-Bresco, S. Dommers, V. Temnov, U. Woggon, M. Laemmlin, D. Bimberg, E. Malic, M. Richter, E. Schöll, A. Knorr | IEEE Proc. of CLEO/QELSC, San Jose, USA, May 2008 Vol. 1-9 3599 (2008) |
| 83 | C6 | Slow and fast gain and phase dynamics in a quantum dot semiconductor optical amplifier | T. Vallaitis, C. Koos, R. Bonk, W. Freude, M. Lämmlin, C. Meuer, D. Bimberg, J. Leuthold | Optics Express 16 (1) 170 (2008) |
| 84 | C6 | Semiconductor quantum dots | D. Bimberg | Chapter 2 in "Optical Fiber Telecommunications V A: Components and Subsystems" (I. Kaminow, T. Li, A. Willner, Eds.) 23 (2008) |
| 85 | C6 | Single and multiple channel operation dynamics of linear quantum-dot semiconductor optical amplifier | R. Bonk, C. Meuer, T. Vallaitis, S. Sygletos, P. Vorreau, S. Ben-Ezra, S. Tsadka, A. R. Kovsh, I. L. Krestnikov, M. Laemmlin, D. Bimberg, W. Freude, J. Leuthold | Proc. of 34th European Conference on Optical Communication (ECOC 2008), September 21–25, 2008, Brussels, Belgium, paper Th.1.C.2 |
| 86 | C8 / C1 / B1 / B2 | Impact of Coulomb scattering on the ultrafast gain recovery in InGaAs quantum dots | J. Gomis-Bresco, S. Dommers, V.V. Temnov, and U. Woggon, M. Laemmlin, D. Bimberg, E. Malic, M. Richter, E. Schöll, and A. Knorr | Physical Review Letters 101 256803 (2008) |