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Papers 2008

No.
Project(s)
Title
Authors
Journal
1
A1
Near band edge and defect emissions from epitaxial lateral overgrown a-plane GaN with different stripe orientations [1]
C. Netzel, T. Wernicke, U. Zeimer, F. Brunner, M. Weyers, and M. Kneissl
J. Cryst. Growth 310, 8 (2008)
2
A1
Microstructure of a-plane (2-1-10) GaN ELOG stripe patterns with different in-plane orientation [2]
T. Wernicke, U. Zeimer, M. Herms, M. Weyers, M. Kneissl, G. Irmer
J. of Materials Science, (2008)
3
A1
Anisotropic strain on phonons in a-plane GaN layers studied by raman scattering [3]
G. Irmer, T. Brumme, M. Herms, T. Wernicke, M. Kneissl, M. Weyers
J. of Materials Science,(2008)
4
A1/ C4
A-plane GaN epitaxial lateral overgrowth structures: Growth domains,
morphological defects, and impurity incorporation directly imaged
by cathodoluminescence microscopy
[4]
B. Bastek, F. Bertram, J. Christen, T. Wernicke, M. Weyers, and M. Kneissl
Appl. Phys. Lett. 92, 212111 (2008)
5
A1
Semipolar GaN grown on m-plane
sapphire using MOVPE [5]
T. Wernicke, C. Netzel, M. Weyers, and M. Kneissl
phys. stat. sol. (c), No. 6, 1815-1817 (2008)
6
A1
Indium Nitride Quantum Dot growth modes in Metal-Organic Vapour Phase Epitaxy [6]
Christian Meissner, Simon Ploch, Martin Leyer, Markus Pristovsek and Michael Kneissl
J. Cryst. Growth 310, 4959 (2008)
7
A1
The critical thickness of InGaN on (0001) GaN [7]
Martin Leyer, Joachim Stellmach, Christian Meissner, Markus Pristovsek, Michael Kneissl
J. Cryst. Growth 310, 4913 (2008)
8
A1
Influence of the growth temperature on the structural and optical properties of InGaN multi-quantum-wells for 405 nm laser diodes [8]
V. Hoffmann, A. Knauer, F. Brunner, U. Zeimer, S. Einfeldt, M. Weyers, M. Kneissl, G. Tränkle, J.R. van Look, K. Kazlauskas, S. Jursenas
J. Cryst. Growth 310, 4525 (2008)
9
A1
Growth Mode and Shape of InN Quantum Dots and Nanostructures grown by Metal Organic Vapour Phase Epitaxy [9]
S. Ploch, C. Meissner, M. Pristovsek, M. Kneissl
phys. stat .sol. c 6, s574 (2008)
10
A2
Temperature-stable operation of a quantum dot semiconductor disk laser [10]
T. Germann, A. Strittmatter, U. W. Pohl, J. Pohl, D. Bimberg, J. Rautiainen, M. Guina, O.G. Okhotnikov
Appl. Phys. Lett. 93, 051104 (2008)
11
A2
High-power semiconductor disk laser based on InAs/GaAs submonolayer quantum dots
[11]
T. D. Germann, A. Strittmatter, J. Pohl, U. W. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. G. Okhotnikov
Appl. Phys. Lett. 92, 101123 (2008)
12
A2 / C1
1040 nm vertical external cavity surface emitting laser based on InGaAs quantum dots grown in Stranski-Krastanow regime [12]
A. Strittmatter, T.D. Germann, J. Pohl, U.W. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O.G. Okhotnikov
Electron. Lett. 44, 290 (2008)
13
A2
Progress in epitaxial growth and performance of quantum dot and quantum wire lasers [13]
N.N. Ledentsov, D. Bimberg, and Z.I. Alferov
Journal of Lightwave Technology 26 (9-12) 1540 (2008)
14
A2/ C6
Quantum-dot semiconductor disk lasers [14]
T.D. Germann, A. Strittmatter, U.W. Pohl, D. Bimberg, J. Rautiainen, M. Guina, O.G. Okhotnikov
J. Crystal Growth 310, 5182-5186 (2008)
15
A2
Suppression of the wavelength blue shift during overgrowth of InGaAs-based quantum dots [15]
A. Strittmatter, T.D. Germann, T. Kettler, K. Posilovic, J. Pohl, U.W. Pohl and D. Bimberg
J. Crystal Growth 310, 5066-5068 (2008)
16
A3/ A2
Improved optical confinement in 1.55 µm InAs/GaInAsP quantum dot lasers grown by MOVPE [16]
D. Franke, P. Harde, J. Kreissl, M. Moehrle, H. Kuenzel, U.W. Pohl and D. Bimberg
Proc. 15th International Conf. on InP and Related Materials (IPRM'08), Versailles (France); ISBN 1-4244-0874-1, ISN 1092-8669, p. 559-562
17
A4
Nitrogen-induced intermixing of InAsN quantum dots with the GaAs matrix [17]
L. Ivanova, H. Eisele, A. Lenz, R. Timm, M. Dähne, O. Schumann, L. Geelhaar and H. Riechert
Appl. Phys. Lett. 92, 203101 (2008)
18
A4
Quantum ring formation and antimony segregation in GaSb/GaAs nanostructures [18]
R. Timm, A. Lenz, H. Eisele, L. Ivanova and M. Dähne; G. Balakrishnan and D. L. Huffaker; I. farrer and D. A. Ritchie
J. Vac. Sci. Technol. B, Vol. 26, Issue 4 (2008)
19
A4/ A2
Structure of InAs quantum dots-in-a-well nanostructures [19]
A. Lenz, H. Eisele, R. Timm, L. Ivanova, H.-Y. Liu, M. Hopkinson, U.W. Pohl, and M. Dähne
Physica E 40, 1988 (2008)
20
A4
Surface states and origin of the Fermi level pinning on non-polar GaN-surfaces [20]
L. Ivanova, S. Borisova, H. Eisele, M. Dähne, A. Laubsch, and Ph. Ebert
Appl. Phys. Lett. 93, 192110 (2008)
21
A4
Self-organized formation of GaSb/GaAs quantum rings [21]
R. Timm, H. Eisele, A. Lenz, L. Ivanova, G. Balakrishnan, D.L. Huffaker, and M. Dähne
Phys. Rev. Lett.101, 256101 (2008)
22
A4
Change of InAs/GaAs quantum dot shape and composition during capping [22]
H. Eisele, A. Lenz, R. Heitz, R. Timm, M. Dähne, Y. Temko, T. Suzuki, and K. Jacobi
J. Appl. Phys. 104, 124301 (2008)
23
A5/ A6
Energy transfer in close-packed PbS nanocrystal films [23]
V. Rinnerbauer, H.-J. Egelhaaf, K. Hingerl, P. Zimmer, S. Werner, T.
Warming, A. Hoffmann, M. Kovalenko, W. Heiss, G. Hesser, and F. Schaffler
Phys. Rev. B 77, 085322 (2008)
24
A5/ A6
Polarized emission lines from single InGaN/GaN quantum dots: Role of the valence-band structure of wurtzite Group-III nitrides [24]
M.Winkelnkemper, R. Seguin, S. Rodt, A. Schliwa, L. Reißmann, A. Strittmatter, A. Hoffmann, D. Bimberg
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES   Volume: 40 (2008)
25
A5
Magnetooptical properties of quantum dots: Influence of the
piezoelectric field [25]
Krapek V, Schliwa A, Bimberg D
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES   Volume: 40 (2008)
26
A5
GaN/AlN quantum dots for single qubit emitters [26]
Winkelnkemper M, Seguin R, Rodt S, et al.
JOURNAL OF PHYSICS-CONDENSED MATTER, Volume: 20 (2008)
27
A5
Consistent set of band parameters for the group-III nitrides AlN,
GaN, and InN [27]
Rinke P, Winkelnkemper M, Qteish A, et al.
Phys. Rev. B 77, 075202 (2008)
28
A5/ A6
Decay dynamics of neutral and charged excitonic complexes in
single InAs/GaAs quantum dots [28]
M. Feucker, R. Seguin, S. Rodt, A. Hoffmann, D. Bimberg
Appl. Phys. Lett. 92, 063116 (2008)
29
A5
Onion-like growth and inverted many-particle energies in quantum dots [29]
D. Bimberg
Applied Surface Science 255 799 (2008)
30
A5/ A6
Origin of the broad lifetime distribution of localized excitons in InGaN/GaN quantum dots [30]
M. Winkelnkemper, M. Dworzak, T.P. Bartel, A. Strittmatter, A. Hoffmann, and D. Bimberg
Phys. Stat. Sol. (b) 245 (12) 2766 (2008)
31
A5
Excitonic Mott transition in type-II quantum dots [31]
B. Bansal, M. Hayne, M. Geller, D. Bimberg, V.V. Moshchalkov
Physical Review B 77 241304 (2008)
32
A5
Effect of excitation level on the optical properties of GaAs/AlGaO [32]
Nadtochiy, A.M; Blokhin, S.A.; Sakharov, A.V.; Kulagina, M.M.; Zadiranov, Yu.M.; Gordeev, N.Yu.; Maksimov, M.V.; Ustinov, V.M. ; Ledentsov, N.N.; Stock, E.; Warming, T.;
Semiconductors (Oct. 2008), vol.42, no.10, p. 1228-33
33
A5/ A2
Size-tunable exchange interaction in InAs/GaAs quantum dots [33]
U.W. Pohl, A. Schliwa, R. Seguin, S. Rodt, K. Pötschke, D. Bimberg
Adv. in Sol. State Phys. (R. Haug, Ed.) 46 45 (2008)
34
A5
Theory of Excitons in InGaAs/GaAs Quantum Dots
Schliwa, A, and M Winkelnkemper, D. Bimberg (Ed.)
Nanoscience and Technology,
Springer Verlag, Berlin, Heidelberg, 2008, ISBN 978-3-540-77898-1
35
A5
Magnetooptical properties of quantum dots: Influence of the piezoelectric field [34]
Křápek, Vlastimil, Andrei Schliwa, and Dieter Bimberg
Physica E: Low-dimensional Systems and Nanostructures 40, no. 5 (March 2008): 1163-1165
36
A6
Model of Raman scattering in self-assembled InAs/GaAs quantum dots [35]
S.N. Klimin, V.M. Fomin, J.T. Devreese, and D. Bimberg
Physical Review B 77 45307 (2008)
37
A6
Phonon interaction in InGaAs/GaAs quantum dots [36]
S. Werner, P. Zimmer, N.N. Ledentsov, A. Hoffmann
Proc. on MRS meeting, Spring 2008
38
A6
Optical characterization of InN layers grown by high-pressure chemical vapour deposition [37]
M. Alevli, R. Ataley, G. Durkaya, A. Weesekara, G.U. Perera and N. Dietz, R. Kirste, A. Hoffmann
J. Vac. Sci. Technol. A 26 (2008), 1023
39
A6
Structural and optical inhomogeneities of Fe doped GaN grown by HVPE [38]
E. Malguth, A. Hoffmann, M.R. Phillips
J. Appl. Phys. 104 (2008), 123712
40
A6/ A5
GaN/AlN quantum dots for single qubit emitters [39]
M. Winkelnkemper, R. Seguin, S. Rodt, A. Hoffmann, D. Bimberg
JPCM 20 (2008), 454211
41
A6
Optical properties of III-V quantum dots [40]
Udo W. Pohl, Sven Rodt, Axel Hoffmann
Semiconductor Nanostructures, ed. D. Bimberg, Springer Verlag Berlin Heidelberg New York 2008, ISBN 978-3-540-77898, p 269-300
42
B1
Optical control and decoherence
of spin qubits in semiconductor quantum dots [41]
P.Machnikovski, A.Grodecka, C.Weber, A.Knorr
Materials Science Poland, 26, 851 (2008)
43
B1
Optical solitons in semiconductor quantum dot waveguides [42]
G. T. Adamashvili, A. Knorr, and C. Weber
Eur. Phys. J. D 47, 113-117 (2008)
44
B1
Theory of electron-phonon interactions on nanoscales: semiconductor surfaces and two dimensional electron gases [43]
N. Buecking, S.Butscher, M. Richter, C.Weber, S. Declair, M. Woerner, Kreimann, P. Kratzer, M. Scheffler, and A. Knorr
Proceedings of SPIE 6892, 689209 (2008)
45
B1
"Role of electron-phonon scattering on the vacuum Rabi splitting of a single-quantum dot and a photonic crystal nanocavity" [44]
F. Milde, A. Knorr, and S. Hughes
Phys. Rev. B 78, 035330 (2008)
46
B1
Influence of non-Markovian relaxation processes on self-induced transparency: memory function theory for optical solitons [45]
G. T. Adamashvili, D. J. Kaup, A. Knorr, and C. Weber
Phys. Rev. A 78,013840 (2008)
47
B1
Linking density functional and density-matrix theory: Picosecond electron relaxation at the Si(100) surface [46]
N. Bücking, P. Kratzer, M. Scheffler, and A. Knorr
Phys. Rev. B 77, 233305 (2008)
48
B1
Theory of electron-phonon interactions on nanoscales: semiconductor surfaces and two dimesional electron gases [47]
N. Buecking, S. Butscher, M. Richter, C. Weber, S. Declair, M. Woerner, Kreimann, P. Kratzer, M. Scheffler, and A. Knorr
Proceedings of SPIE 6892, 689209 (2008)
49
B2
Delay stabilization of rotating waves near fold bifurcation and application to all-optical control of a semiconductor laser [48]
B. Fiedler, S. Yanchuk, V. Flunkert, P. Hövel, H. J. Wünsche, and E. Schöll
Phys. Rev. E 77, 066207 (2008)
50
B2 / B1 / C6
Turn-on dynamics and modulation response in semiconductor quantum dot lasers [49]
K. Lüdge, M. J. P. Borman, E. Malic, P. Hövel, M. Kuntz, D. Bimberg, A. Knorr and E. Schöll
Phys. Rev. B 78, 035316 (2008)
51
B2 / B1 / C6
Dynamic response of quantum dot lasers – Influence of nonlinear electron-electron scattering [50]
K. Lüdge, E. Malic, M. Kuntz, D. Bimberg, A. Knorr, E. Schöll
IEEE Proc. of CLEO/QELSC, San Jose, USA, May 2008 Vol. 1-9 981 (2008)
52
B2 / B1 / C6
Decoupled electron and hole dynamics in the turn-on behavior of quantum-dot lasers [51]
K. Lüdge, E. Malic, M. Kuntz, D. Bimberg, E. Schöll
IEEE Proc. of ISLC, Sorrento, Italy, September 2008 CFP08SLC-CDR MC4 (2008)
53
B4
Existence of bounded steady state solutions to spin-polarized drift-diffusion systems [52]
Glitzky, Annegret; Gärtner, Klaus
WIAS, Preprint No. 1357
54
B4
Dynamic simulation of high brightness semiconductor lasers [53]
M. Lichtner, M. Radziuna, U. Bandelow, M. 
Spreemann and H. Wenzel
Proceedings of the 8th International Conference on
Numerical Simulation of Optoelectronic Devices, NUSOD '08
55
B5
Chaotic soliton walk in periodically modulated media [54]
D. Turaev, M. Radziunas, and A.G. Vladimirov
Phys. Rev. E 77, 065201(R) (2008)
56
B5
Solitary-wave solutions for few-cycle optical pulses [55]
S. Amiranashvili, A.G. Vladimirov, and U. Bandelow
Phys. Rev. A 77, 063821 (2008)
57
B5
Numerical algorithms for simulation of multisection lasers by using traveling wave model [56]
R. Ciegis, M. Radziunas, and M. Lichtner
Math. Model. Anal. 13, 327–348 (2008)
58
C1/ A5
Effect of excitation level on the optical properties of GaAs/AlGaO
microdisks with an active region containing InAs quantum dots [57]
A.M. Nadtochiy, S.A. Blokhin, A.V. Sakharov, M.M. Kulagina,
Y.M.Zadiranov, N.Y. Gordeev, M.V. Maksimov, V.M. Ustinov, N.N.
Ledentsov, E. Stock, T. Warming, and D. Bimberg
Semiconductors 42, 1228-1233 (2008)
59
C1/ B4
120° C 20 Gbit/s Operation of 980 nm Single Mode VCSEL [58]
A. Mutig, G. Fiol, P. Moser, F. Hopfer, M. Kuntz V.A. Shchukin, N.N. Ledentsov, D. Bimberg, S.S. Mikhrin, I.L. Krestnikov, D.A. Livshits, and A.R. Kovsh
IEEE Proc. of ISLC, Sorrento, Italy, September 2008 CFP08SLC-CDR MB2 (2008)
60
C1/ B4
120° C 20 Gbit/s operation of 980 nm VCSEL [59]
A. Mutig, G. Fiol, P. Moser, D. Arsenijevic, V.A. Shchukin, N.N. Ledentsov, S.S. Mikhrin, I.L. Krestnikov, D.A. Livshits, A.R. Kovsh, F. Hopfer, and D. Bimberg
Electr. Lett. 44 (22) 1305 (2008)
61
C1/ C6
40 GHz small-signal cross-gain modulation in 1.3 μm quantum dot semiconductor optical amplifiers [60]
C. Meuer, J. Kim, M. Laemmlin, S. Liebich, D. Bimberg, A. Capua, G. Eisenstein, R. Bonk, T. Vallaitis, J. Leuthold, A.R. Kovsh, and I.L. Krestnikov
Appl. Phys. Lett. 93 51110 (2008)
62
C1/ C6
Enhancing small-signal cross-gain modulation of quantum-dot optical amplifiers by injecting carriers to excited states [61]
J. Kim, M. Laemmlin, C. Meuer, S. Liebich, D. Bimberg, and G. Eisenstein
Proc. of OFC/NFOEC 2008, San Diego, USA, February 2008 (Optical Society of America) OTuC3 (2008)
63
C1/ B4
High-speed directly and indirectly modulated VCSELs [62]
F. Hopfer, A. Mutig, A. Strittmatter, G. Fiol, P. Moser, D. Bimberg, V.A. Shchukin, N.N. Ledentsov, J.A. Lott, H. Quast, M. Kuntz, S.S. Mikhrin, I.L. Krestnikov, D.A. Livshits, A.R. Kovsh, C. Bornholdt
IEEE Proc. of IPRM-20, Versailles, France, May 2008 CFP08IIP-CDR (2008)
64
C1
Nonlinear properties of quantum dot semiconductor optical amplifiers at 1.3 μm [63]
D. Bimberg, C. Meuer, M. Laemmlin, S. Liebich, J. Kim, A. Kovsh, I. Krestnikov, G. Eisenstein
Chinese Optics Letters 6 (10) 724 (2008)
65
C1
Quantum dot semiconductor optical amplifiers for wavelength conversion using cross-gain modulation [64]
D. Bimberg, C. Meuer, M. Laemmlin, S. Liebich, J. Kim, G. Eisenstein, and A.R. Kovsh
IEEE Proc. of ICTON, Athens, Greece, 2008 2 141 (2008)
66
C1
Single-lobe single-wavelength lasing in ultrabroad-area vertical-cavity surface-emitting lasers based on the integrated filter concept [65]
S.A. Blokhin, L.Y. Karachinsky, I.I. Novikov, N.Y. Gordeev, A.V. Sakharov, N.A. Maleev, A.G. Kuzmenkov, Y.M. Shernyakov, M.V. Maximov, A.R. Kovsh, S.S. Mikhrin, V.A. Shchukin, N.N. Ledentsov, V.M. Ustinov, and D. Bimberg
IEEE Journal of Quantum Electronics 44 (8) 724 (2008)
67
C1
Static gain saturation in quantum dot semiconductor optical amplifiers [66]
C. Meuer, J. Kim, M. Laemmlin, S. Liebich, A. Capua, G. Eisenstein, A.R. Kovsh, S.S. Mikhrin, I.L. Krestnikov, and D. Bimberg
Optics Express 16 (11) 8269 (2008)
68
C1
Static gain saturation model of quantum-dot semiconductor optical amplifiers [67]
J. Kim, M. Laemmlin, C. Meuer, D. Bimberg, and G. Eisenstein
IEEE Journal of Quantum Electronics 44 (7) 658 (2008)
69
C1
Ultrahigh–speed electrooptically–modulated VCSELs: Modeling and experimental results [68]
V.A. Shchukin, N.N. Ledentsov, J.A. Lott, H. Quast, F. Hopfer, L.Ya. Karachinsky, M. Kuntz, P. Moser, A. Mutig, A. Strittmatter, V.P. Kalosha, and D. Bimberg
Proc. of OPTO 2008 at Photonics West, San Jose, USA, January 2008
70
C5
Quantum dot based nanophotonics and nanoelectronics [69]
D. Bimberg
Electr. Lett. 44 (3) 168 (2008)
71
C5
From k•p to atomic calculations applied to semiconductor heterostructures [70]
L. Pedesseau, C. Cornet, F. Doré, J. Even, A. Schliwa, and D. Bimberg
Journal of Physics: Conf. Ser. 107 12009 (2008)
72
C5/ A2
High brightness and ultra-narrow beam 850 nm GaAs/AlGaAs photonic band crystal lasers and first uncoupled PBC single-mode arrays [71]
T. Kettler, K. Posilovic, J. Fricke, P. Ressel, A. Ginolas, U.W. Pohl, V.A. Shchukin, N.N. Ledentsov, D. Bimberg, J. Jönsson, M. Weyers, G. Erbert, and G. Tränkle
IEEE Proc. of ISLC, Sorrento, Italy, September 2008 CFP08SLC-CDR ThC6 (2008)
73
C5
High-power low-beam divergence edge-emitting semiconductor lasers with 1- and 2-D photonic bandgap crystal waveguide [72]
M.V. Maximov, Y.M. Shernyakov, I.I. Novikov, N.Yu. Gordeev, L.Ya. Karachinsky, U. Ben-Ami, D. Bortman-Arbiv, A. Sharon, V.A. Shchukin, N.N. Ledentsov, T. Kettler, K. Posilovic, and D. Bimberg
IEEE Journal of Selected Topics in Quantum Electronics 14 (4) 1113 (2008)
74
C5
High-power one-, two-, and three-dimensional photonic crystal edge-emitting laser diodes for ultrahigh brightness applications [73]
N.Yu. Gordeev, M.V. Maximov, Y.M. Shernyakov, I.I. Novikov, L.Ya. Karachinsky, V.A. Shchukin, T. Kettler, K. Posilovic, N.N. Ledentsov, D. Bimberg, R. Duboc, A. Sharon, D.B. Arbiv, U. Ben-Ami
Proc. SPIE, Vol. 6889, 68890W (2008)
75
C5
Tilted cavity concept for the high-power wavelength stabilized diode lasers [74]
L.Ya. Karachinsky, I.I. Novikov, G. Fiol, M. Kuntz, Yu.M. Shernyakov, N.Yu. Gordeev, M.V. Maximov, M.B. Lifshits, T. Kettler, K. Posilovic, V.A. Shchukin, N.N. Ledentsov, S.S. Mikhrin, D. Bimberg
Proc. of SPIE: 6th Int. Conf. on Photonics, Devices, and Systems IV, Prague, August 2008, 7138, pp. 713804 (2008)
76
C5/ A2
Ultrahigh-brightness 850 nm GaAs/AlGaAs photonic crystal laser diodes [75]
K. Posilovic, T. Kettler, V.A. Shchukin, N.N. Ledentsov, U.W. Pohl, D. Bimberg, J. Fricke, A. Ginolas, G. Erbert, G. Tränkle, J. Jönsson, and M. Weyers
Appl. Phys. Lett. 93 221102 (2008)
77
C6
High speed cross gain modulation using quantum dot semiconductor optical amplifiers at 1.3 μm [76]
C. Meuer, M. Laemmlin, S. Liebich, J. Kim, D. Bimberg, A. Capua, G. Eisenstein, R. Bonk, T. Vallaitis, and J. Leuthold
IEEE Proc. of CLEO/QELSC, San Jose, USA, May 2008 Vol. 1-9 1445 (2008)
78
C6
Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K) [77]
Karachinsky, L.Y., Novikov, II, Y.M. Shernyakov, N.Y. Gordeev, A.S. Payusov, M.V. Maximov, S.S. Mikhrin, M.B. Lifshits, V.A. Shchukin, P.S. Kop'ev, N.N. Ledentsov, and D. Bimberg
Semiconductors 43 (5) 680 (2009)
79
C6
A wavelength conversion scheme based on a quantum-dot semiconductor optical amplifier and a delay interferometer [78]
S. Sygletos, R. Bonk, P. Vorreau, T. Vallaitis, J. Wang, W. Freude, J. Leuthold, C. Meuer, D. Bimberg, R. Brenot, F. Lelarge, G. H. Duan
IEEE Proc. of ICTON, Athens, Greece, 2008 Vol. 2 149 (2008)
80
C6
An interferometric configuration for performing cross-gain modulation with improved signal quality [79]
R. Bonk, P. Vorreau, S. Sygletos, T. Vallaitis, J. Wang, W. Freude, J. Leuthold, R. Brenot, F. Lelarge, G.H. Duan, C. Meuer, S. Liebich, M. Laemmlin, D. Bimberg
Proc. of OFC/NFOEC 2008, San Diego, USA, February 2008
81
C6/ A2/ C1
Characterisation of an InAs quantum dot semiconductor disk laser [80]
P. Schlosser, S. Calvez, J.E. Hastie, S. Jin, T.D. Germann, A. Strittmatter, U.W. Pohl, D. Bimberg, and M.D. Dawson
IEEE Proc. of CLEO/QELSC, San Jose, USA, May 2008 Vol. 1-9 1810 (2008)
82
C6/ B1
InGaAs quantum dot population and polarisation dynamics for ultrafast pulse train amplification [81]
J. Gomis-Bresco, S. Dommers, V. Temnov, U. Woggon, M. Laemmlin, D. Bimberg, E. Malic, M. Richter, E. Schöll, A. Knorr
IEEE Proc. of CLEO/QELSC, San Jose, USA, May 2008 Vol. 1-9 3599 (2008)
83
C6
Slow and fast gain and phase dynamics in a quantum dot semiconductor optical amplifier [82]
T. Vallaitis, C. Koos, R. Bonk, W. Freude, M. Lämmlin, C. Meuer, D. Bimberg, J. Leuthold
Optics Express 16 (1) 170 (2008)
84
C6
Semiconductor quantum dots
D. Bimberg
Chapter 2 in "Optical Fiber Telecommunications V A: Components and Subsystems" (I. Kaminow, T. Li, A. Willner, Eds.) 23 (2008)
85
C6
Single and multiple channel operation dynamics of linear quantum-dot semiconductor optical amplifier [83]
R. Bonk, C. Meuer, T. Vallaitis, S. Sygletos, P. Vorreau, S. Ben-Ezra, S. Tsadka, A. R. Kovsh, I. L. Krestnikov, M. Laemmlin, D. Bimberg, W. Freude, J. Leuthold
Proc. of 34th European Conference on Optical Communication (ECOC 2008), September 21–25, 2008, Brussels, Belgium, paper Th.1.C.2
86
C8 / C1 / B1 / B2
Impact of Coulomb scattering on the ultrafast gain recovery in InGaAs quantum dots [84]
J. Gomis-Bresco, S. Dommers, V.V. Temnov, and U. Woggon, M. Laemmlin, D. Bimberg, E. Malic, M. Richter, E. Schöll, and A. Knorr
Physical Review Letters 101 256803 (2008)
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