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Inhalt des Dokuments

Papers 2008

No.
Project(s)
Title
Authors
Journal
1
A1
Near band edge and defect emissions from epitaxial lateral overgrown a-plane GaN with different stripe orientations
C. Netzel, T. Wernicke, U. Zeimer, F. Brunner, M. Weyers, and M. Kneissl
J. Cryst. Growth 310, 8 (2008)
2
A1
Microstructure of a-plane (2-1-10) GaN ELOG stripe patterns with different in-plane orientation
T. Wernicke, U. Zeimer, M. Herms, M. Weyers, M. Kneissl, G. Irmer
J. of Materials Science, (2008)
3
A1
Anisotropic strain on phonons in a-plane GaN layers studied by raman scattering
G. Irmer, T. Brumme, M. Herms, T. Wernicke, M. Kneissl, M. Weyers
J. of Materials Science,(2008)
4
A1/ C4
A-plane GaN epitaxial lateral overgrowth structures: Growth domains,
morphological defects, and impurity incorporation directly imaged
by cathodoluminescence microscopy

B. Bastek, F. Bertram, J. Christen, T. Wernicke, M. Weyers, and M. Kneissl
Appl. Phys. Lett. 92, 212111 (2008)
5
A1
Semipolar GaN grown on m-plane
sapphire using MOVPE

T. Wernicke, C. Netzel, M. Weyers, and M. Kneissl
phys. stat. sol. (c), No. 6, 1815-1817 (2008)
6
A1
Indium Nitride Quantum Dot growth modes in Metal-Organic Vapour Phase Epitaxy
Christian Meissner, Simon Ploch, Martin Leyer, Markus Pristovsek and Michael Kneissl
J. Cryst. Growth 310, 4959 (2008)
7
A1
The critical thickness of InGaN on (0001) GaN
Martin Leyer, Joachim Stellmach, Christian Meissner, Markus Pristovsek, Michael Kneissl
J. Cryst. Growth 310, 4913 (2008)
8
A1
Influence of the growth temperature on the structural and optical properties of InGaN multi-quantum-wells for 405 nm laser diodes
V. Hoffmann, A. Knauer, F. Brunner, U. Zeimer, S. Einfeldt, M. Weyers, M. Kneissl, G. Tränkle, J.R. van Look, K. Kazlauskas, S. Jursenas
J. Cryst. Growth 310, 4525 (2008)
9
A1
Growth Mode and Shape of InN Quantum Dots and Nanostructures grown by Metal Organic Vapour Phase Epitaxy
S. Ploch, C. Meissner, M. Pristovsek, M. Kneissl
phys. stat .sol. c 6, s574 (2008)
10
A2
Temperature-stable operation of a quantum dot semiconductor disk laser
T. Germann, A. Strittmatter, U. W. Pohl, J. Pohl, D. Bimberg, J. Rautiainen, M. Guina, O.G. Okhotnikov
Appl. Phys. Lett. 93, 051104 (2008)
11
A2
High-power semiconductor disk laser based on InAs/GaAs submonolayer quantum dots

T. D. Germann, A. Strittmatter, J. Pohl, U. W. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O. G. Okhotnikov
Appl. Phys. Lett. 92, 101123 (2008)
12
A2 / C1
1040 nm vertical external cavity surface emitting laser based on InGaAs quantum dots grown in Stranski-Krastanow regime
A. Strittmatter, T.D. Germann, J. Pohl, U.W. Pohl, D. Bimberg, J. Rautiainen, M. Guina, and O.G. Okhotnikov
Electron. Lett. 44, 290 (2008)
13
A2
Progress in epitaxial growth and performance of quantum dot and quantum wire lasers
N.N. Ledentsov, D. Bimberg, and Z.I. Alferov
Journal of Lightwave Technology 26 (9-12) 1540 (2008)
14
A2/ C6
Quantum-dot semiconductor disk lasers
T.D. Germann, A. Strittmatter, U.W. Pohl, D. Bimberg, J. Rautiainen, M. Guina, O.G. Okhotnikov
J. Crystal Growth 310, 5182-5186 (2008)
15
A2
Suppression of the wavelength blue shift during overgrowth of InGaAs-based quantum dots
A. Strittmatter, T.D. Germann, T. Kettler, K. Posilovic, J. Pohl, U.W. Pohl and D. Bimberg
J. Crystal Growth 310, 5066-5068 (2008)
16
A3/ A2
Improved optical confinement in 1.55 µm InAs/GaInAsP quantum dot lasers grown by MOVPE
D. Franke, P. Harde, J. Kreissl, M. Moehrle, H. Kuenzel, U.W. Pohl and D. Bimberg
Proc. 15th International Conf. on InP and Related Materials (IPRM'08), Versailles (France); ISBN 1-4244-0874-1, ISN 1092-8669, p. 559-562
17
A4
Nitrogen-induced intermixing of InAsN quantum dots with the GaAs matrix
L. Ivanova, H. Eisele, A. Lenz, R. Timm, M. Dähne, O. Schumann, L. Geelhaar and H. Riechert
Appl. Phys. Lett. 92, 203101 (2008)
18
A4
Quantum ring formation and antimony segregation in GaSb/GaAs nanostructures
R. Timm, A. Lenz, H. Eisele, L. Ivanova and M. Dähne; G. Balakrishnan and D. L. Huffaker; I. farrer and D. A. Ritchie
J. Vac. Sci. Technol. B, Vol. 26, Issue 4 (2008)
19
A4/ A2
Structure of InAs quantum dots-in-a-well nanostructures
A. Lenz, H. Eisele, R. Timm, L. Ivanova, H.-Y. Liu, M. Hopkinson, U.W. Pohl, and M. Dähne
Physica E 40, 1988 (2008)
20
A4
Surface states and origin of the Fermi level pinning on non-polar GaN-surfaces
L. Ivanova, S. Borisova, H. Eisele, M. Dähne, A. Laubsch, and Ph. Ebert
Appl. Phys. Lett. 93, 192110 (2008)
21
A4
Self-organized formation of GaSb/GaAs quantum rings
R. Timm, H. Eisele, A. Lenz, L. Ivanova, G. Balakrishnan, D.L. Huffaker, and M. Dähne
Phys. Rev. Lett.101, 256101 (2008)
22
A4
Change of InAs/GaAs quantum dot shape and composition during capping
H. Eisele, A. Lenz, R. Heitz, R. Timm, M. Dähne, Y. Temko, T. Suzuki, and K. Jacobi
J. Appl. Phys. 104, 124301 (2008)
23
A5/ A6
Energy transfer in close-packed PbS nanocrystal films
V. Rinnerbauer, H.-J. Egelhaaf, K. Hingerl, P. Zimmer, S. Werner, T.
Warming, A. Hoffmann, M. Kovalenko, W. Heiss, G. Hesser, and F. Schaffler
Phys. Rev. B 77, 085322 (2008)
24
A5/ A6
Polarized emission lines from single InGaN/GaN quantum dots: Role of the valence-band structure of wurtzite Group-III nitrides
M.Winkelnkemper, R. Seguin, S. Rodt, A. Schliwa, L. Reißmann, A. Strittmatter, A. Hoffmann, D. Bimberg
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES   Volume: 40 (2008)
25
A5
Magnetooptical properties of quantum dots: Influence of the
piezoelectric field

Krapek V, Schliwa A, Bimberg D
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES   Volume: 40 (2008)
26
A5
GaN/AlN quantum dots for single qubit emitters
Winkelnkemper M, Seguin R, Rodt S, et al.
JOURNAL OF PHYSICS-CONDENSED MATTER, Volume: 20 (2008)
27
A5
Consistent set of band parameters for the group-III nitrides AlN,
GaN, and InN

Rinke P, Winkelnkemper M, Qteish A, et al.
Phys. Rev. B 77, 075202 (2008)
28
A5/ A6
Decay dynamics of neutral and charged excitonic complexes in
single InAs/GaAs quantum dots

M. Feucker, R. Seguin, S. Rodt, A. Hoffmann, D. Bimberg
Appl. Phys. Lett. 92, 063116 (2008)
29
A5
Onion-like growth and inverted many-particle energies in quantum dots
D. Bimberg
Applied Surface Science 255 799 (2008)
30
A5/ A6
Origin of the broad lifetime distribution of localized excitons in InGaN/GaN quantum dots
M. Winkelnkemper, M. Dworzak, T.P. Bartel, A. Strittmatter, A. Hoffmann, and D. Bimberg
Phys. Stat. Sol. (b) 245 (12) 2766 (2008)
31
A5
Excitonic Mott transition in type-II quantum dots
B. Bansal, M. Hayne, M. Geller, D. Bimberg, V.V. Moshchalkov
Physical Review B 77 241304 (2008)
32
A5
Effect of excitation level on the optical properties of GaAs/AlGaO
Nadtochiy, A.M; Blokhin, S.A.; Sakharov, A.V.; Kulagina, M.M.; Zadiranov, Yu.M.; Gordeev, N.Yu.; Maksimov, M.V.; Ustinov, V.M. ; Ledentsov, N.N.; Stock, E.; Warming, T.;
Semiconductors (Oct. 2008), vol.42, no.10, p. 1228-33
33
A5/ A2
Size-tunable exchange interaction in InAs/GaAs quantum dots
U.W. Pohl, A. Schliwa, R. Seguin, S. Rodt, K. Pötschke, D. Bimberg
Adv. in Sol. State Phys. (R. Haug, Ed.) 46 45 (2008)
34
A5
Theory of Excitons in InGaAs/GaAs Quantum Dots
Schliwa, A, and M Winkelnkemper, D. Bimberg (Ed.)
Nanoscience and Technology,
Springer Verlag, Berlin, Heidelberg, 2008, ISBN 978-3-540-77898-1
35
A5
Magnetooptical properties of quantum dots: Influence of the piezoelectric field
Křápek, Vlastimil, Andrei Schliwa, and Dieter Bimberg
Physica E: Low-dimensional Systems and Nanostructures 40, no. 5 (March 2008): 1163-1165
36
A6
Model of Raman scattering in self-assembled InAs/GaAs quantum dots
S.N. Klimin, V.M. Fomin, J.T. Devreese, and D. Bimberg
Physical Review B 77 45307 (2008)
37
A6
Phonon interaction in InGaAs/GaAs quantum dots
S. Werner, P. Zimmer, N.N. Ledentsov, A. Hoffmann
Proc. on MRS meeting, Spring 2008
38
A6
Optical characterization of InN layers grown by high-pressure chemical vapour deposition
M. Alevli, R. Ataley, G. Durkaya, A. Weesekara, G.U. Perera and N. Dietz, R. Kirste, A. Hoffmann
J. Vac. Sci. Technol. A 26 (2008), 1023
39
A6
Structural and optical inhomogeneities of Fe doped GaN grown by HVPE
E. Malguth, A. Hoffmann, M.R. Phillips
J. Appl. Phys. 104 (2008), 123712
40
A6/ A5
GaN/AlN quantum dots for single qubit emitters
M. Winkelnkemper, R. Seguin, S. Rodt, A. Hoffmann, D. Bimberg
JPCM 20 (2008), 454211
41
A6
Optical properties of III-V quantum dots
Udo W. Pohl, Sven Rodt, Axel Hoffmann
Semiconductor Nanostructures, ed. D. Bimberg, Springer Verlag Berlin Heidelberg New York 2008, ISBN 978-3-540-77898, p 269-300
42
B1
Optical control and decoherence
of spin qubits in semiconductor quantum dots

P.Machnikovski, A.Grodecka, C.Weber, A.Knorr
Materials Science Poland, 26, 851 (2008)
43
B1
Optical solitons in semiconductor quantum dot waveguides
G. T. Adamashvili, A. Knorr, and C. Weber
Eur. Phys. J. D 47, 113-117 (2008)
44
B1
Theory of electron-phonon interactions on nanoscales: semiconductor surfaces and two dimensional electron gases
N. Buecking, S.Butscher, M. Richter, C.Weber, S. Declair, M. Woerner, Kreimann, P. Kratzer, M. Scheffler, and A. Knorr
Proceedings of SPIE 6892, 689209 (2008)
45
B1
"Role of electron-phonon scattering on the vacuum Rabi splitting of a single-quantum dot and a photonic crystal nanocavity"
F. Milde, A. Knorr, and S. Hughes
Phys. Rev. B 78, 035330 (2008)
46
B1
Influence of non-Markovian relaxation processes on self-induced transparency: memory function theory for optical solitons
G. T. Adamashvili, D. J. Kaup, A. Knorr, and C. Weber
Phys. Rev. A 78,013840 (2008)
47
B1
Linking density functional and density-matrix theory: Picosecond electron relaxation at the Si(100) surface
N. Bücking, P. Kratzer, M. Scheffler, and A. Knorr
Phys. Rev. B 77, 233305 (2008)
48
B1
Theory of electron-phonon interactions on nanoscales: semiconductor surfaces and two dimesional electron gases
N. Buecking, S. Butscher, M. Richter, C. Weber, S. Declair, M. Woerner, Kreimann, P. Kratzer, M. Scheffler, and A. Knorr
Proceedings of SPIE 6892, 689209 (2008)
49
B2
Delay stabilization of rotating waves near fold bifurcation and application to all-optical control of a semiconductor laser
B. Fiedler, S. Yanchuk, V. Flunkert, P. Hövel, H. J. Wünsche, and E. Schöll
Phys. Rev. E 77, 066207 (2008)
50
B2 / B1 / C6
Turn-on dynamics and modulation response in semiconductor quantum dot lasers
K. Lüdge, M. J. P. Borman, E. Malic, P. Hövel, M. Kuntz, D. Bimberg, A. Knorr and E. Schöll
Phys. Rev. B 78, 035316 (2008)
51
B2 / B1 / C6
Dynamic response of quantum dot lasers – Influence of nonlinear electron-electron scattering
K. Lüdge, E. Malic, M. Kuntz, D. Bimberg, A. Knorr, E. Schöll
IEEE Proc. of CLEO/QELSC, San Jose, USA, May 2008 Vol. 1-9 981 (2008)
52
B2 / B1 / C6
Decoupled electron and hole dynamics in the turn-on behavior of quantum-dot lasers
K. Lüdge, E. Malic, M. Kuntz, D. Bimberg, E. Schöll
IEEE Proc. of ISLC, Sorrento, Italy, September 2008 CFP08SLC-CDR MC4 (2008)
53
B4
Existence of bounded steady state solutions to spin-polarized drift-diffusion systems
Glitzky, Annegret; Gärtner, Klaus
WIAS, Preprint No. 1357
54
B4
Dynamic simulation of high brightness semiconductor lasers
M. Lichtner, M. Radziuna, U. Bandelow, M. 
Spreemann and H. Wenzel
Proceedings of the 8th International Conference on
Numerical Simulation of Optoelectronic Devices, NUSOD '08
55
B5
Chaotic soliton walk in periodically modulated media
D. Turaev, M. Radziunas, and A.G. Vladimirov
Phys. Rev. E 77, 065201(R) (2008)
56
B5
Solitary-wave solutions for few-cycle optical pulses
S. Amiranashvili, A.G. Vladimirov, and U. Bandelow
Phys. Rev. A 77, 063821 (2008)
57
B5
Numerical algorithms for simulation of multisection lasers by using traveling wave model
R. Ciegis, M. Radziunas, and M. Lichtner
Math. Model. Anal. 13, 327–348 (2008)
58
C1/ A5
Effect of excitation level on the optical properties of GaAs/AlGaO
microdisks with an active region containing InAs quantum dots

A.M. Nadtochiy, S.A. Blokhin, A.V. Sakharov, M.M. Kulagina,
Y.M.Zadiranov, N.Y. Gordeev, M.V. Maksimov, V.M. Ustinov, N.N.
Ledentsov, E. Stock, T. Warming, and D. Bimberg
Semiconductors 42, 1228-1233 (2008)
59
C1/ B4
120° C 20 Gbit/s Operation of 980 nm Single Mode VCSEL
A. Mutig, G. Fiol, P. Moser, F. Hopfer, M. Kuntz V.A. Shchukin, N.N. Ledentsov, D. Bimberg, S.S. Mikhrin, I.L. Krestnikov, D.A. Livshits, and A.R. Kovsh
IEEE Proc. of ISLC, Sorrento, Italy, September 2008 CFP08SLC-CDR MB2 (2008)
60
C1/ B4
120° C 20 Gbit/s operation of 980 nm VCSEL
A. Mutig, G. Fiol, P. Moser, D. Arsenijevic, V.A. Shchukin, N.N. Ledentsov, S.S. Mikhrin, I.L. Krestnikov, D.A. Livshits, A.R. Kovsh, F. Hopfer, and D. Bimberg
Electr. Lett. 44 (22) 1305 (2008)
61
C1/ C6
40 GHz small-signal cross-gain modulation in 1.3 μm quantum dot semiconductor optical amplifiers
C. Meuer, J. Kim, M. Laemmlin, S. Liebich, D. Bimberg, A. Capua, G. Eisenstein, R. Bonk, T. Vallaitis, J. Leuthold, A.R. Kovsh, and I.L. Krestnikov
Appl. Phys. Lett. 93 51110 (2008)
62
C1/ C6
Enhancing small-signal cross-gain modulation of quantum-dot optical amplifiers by injecting carriers to excited states
J. Kim, M. Laemmlin, C. Meuer, S. Liebich, D. Bimberg, and G. Eisenstein
Proc. of OFC/NFOEC 2008, San Diego, USA, February 2008 (Optical Society of America) OTuC3 (2008)
63
C1/ B4
High-speed directly and indirectly modulated VCSELs
F. Hopfer, A. Mutig, A. Strittmatter, G. Fiol, P. Moser, D. Bimberg, V.A. Shchukin, N.N. Ledentsov, J.A. Lott, H. Quast, M. Kuntz, S.S. Mikhrin, I.L. Krestnikov, D.A. Livshits, A.R. Kovsh, C. Bornholdt
IEEE Proc. of IPRM-20, Versailles, France, May 2008 CFP08IIP-CDR (2008)
64
C1
Nonlinear properties of quantum dot semiconductor optical amplifiers at 1.3 μm
D. Bimberg, C. Meuer, M. Laemmlin, S. Liebich, J. Kim, A. Kovsh, I. Krestnikov, G. Eisenstein
Chinese Optics Letters 6 (10) 724 (2008)
65
C1
Quantum dot semiconductor optical amplifiers for wavelength conversion using cross-gain modulation
D. Bimberg, C. Meuer, M. Laemmlin, S. Liebich, J. Kim, G. Eisenstein, and A.R. Kovsh
IEEE Proc. of ICTON, Athens, Greece, 2008 2 141 (2008)
66
C1
Single-lobe single-wavelength lasing in ultrabroad-area vertical-cavity surface-emitting lasers based on the integrated filter concept
S.A. Blokhin, L.Y. Karachinsky, I.I. Novikov, N.Y. Gordeev, A.V. Sakharov, N.A. Maleev, A.G. Kuzmenkov, Y.M. Shernyakov, M.V. Maximov, A.R. Kovsh, S.S. Mikhrin, V.A. Shchukin, N.N. Ledentsov, V.M. Ustinov, and D. Bimberg
IEEE Journal of Quantum Electronics 44 (8) 724 (2008)
67
C1
Static gain saturation in quantum dot semiconductor optical amplifiers
C. Meuer, J. Kim, M. Laemmlin, S. Liebich, A. Capua, G. Eisenstein, A.R. Kovsh, S.S. Mikhrin, I.L. Krestnikov, and D. Bimberg
Optics Express 16 (11) 8269 (2008)
68
C1
Static gain saturation model of quantum-dot semiconductor optical amplifiers
J. Kim, M. Laemmlin, C. Meuer, D. Bimberg, and G. Eisenstein
IEEE Journal of Quantum Electronics 44 (7) 658 (2008)
69
C1
Ultrahigh–speed electrooptically–modulated VCSELs: Modeling and experimental results
V.A. Shchukin, N.N. Ledentsov, J.A. Lott, H. Quast, F. Hopfer, L.Ya. Karachinsky, M. Kuntz, P. Moser, A. Mutig, A. Strittmatter, V.P. Kalosha, and D. Bimberg
Proc. of OPTO 2008 at Photonics West, San Jose, USA, January 2008
70
C5
Quantum dot based nanophotonics and nanoelectronics
D. Bimberg
Electr. Lett. 44 (3) 168 (2008)
71
C5
From k•p to atomic calculations applied to semiconductor heterostructures
L. Pedesseau, C. Cornet, F. Doré, J. Even, A. Schliwa, and D. Bimberg
Journal of Physics: Conf. Ser. 107 12009 (2008)
72
C5/ A2
High brightness and ultra-narrow beam 850 nm GaAs/AlGaAs photonic band crystal lasers and first uncoupled PBC single-mode arrays
T. Kettler, K. Posilovic, J. Fricke, P. Ressel, A. Ginolas, U.W. Pohl, V.A. Shchukin, N.N. Ledentsov, D. Bimberg, J. Jönsson, M. Weyers, G. Erbert, and G. Tränkle
IEEE Proc. of ISLC, Sorrento, Italy, September 2008 CFP08SLC-CDR ThC6 (2008)
73
C5
High-power low-beam divergence edge-emitting semiconductor lasers with 1- and 2-D photonic bandgap crystal waveguide
M.V. Maximov, Y.M. Shernyakov, I.I. Novikov, N.Yu. Gordeev, L.Ya. Karachinsky, U. Ben-Ami, D. Bortman-Arbiv, A. Sharon, V.A. Shchukin, N.N. Ledentsov, T. Kettler, K. Posilovic, and D. Bimberg
IEEE Journal of Selected Topics in Quantum Electronics 14 (4) 1113 (2008)
74
C5
High-power one-, two-, and three-dimensional photonic crystal edge-emitting laser diodes for ultrahigh brightness applications
N.Yu. Gordeev, M.V. Maximov, Y.M. Shernyakov, I.I. Novikov, L.Ya. Karachinsky, V.A. Shchukin, T. Kettler, K. Posilovic, N.N. Ledentsov, D. Bimberg, R. Duboc, A. Sharon, D.B. Arbiv, U. Ben-Ami
Proc. SPIE, Vol. 6889, 68890W (2008)
75
C5
Tilted cavity concept for the high-power wavelength stabilized diode lasers
L.Ya. Karachinsky, I.I. Novikov, G. Fiol, M. Kuntz, Yu.M. Shernyakov, N.Yu. Gordeev, M.V. Maximov, M.B. Lifshits, T. Kettler, K. Posilovic, V.A. Shchukin, N.N. Ledentsov, S.S. Mikhrin, D. Bimberg
Proc. of SPIE: 6th Int. Conf. on Photonics, Devices, and Systems IV, Prague, August 2008, 7138, pp. 713804 (2008)
76
C5/ A2
Ultrahigh-brightness 850 nm GaAs/AlGaAs photonic crystal laser diodes
K. Posilovic, T. Kettler, V.A. Shchukin, N.N. Ledentsov, U.W. Pohl, D. Bimberg, J. Fricke, A. Ginolas, G. Erbert, G. Tränkle, J. Jönsson, and M. Weyers
Appl. Phys. Lett. 93 221102 (2008)
77
C6
High speed cross gain modulation using quantum dot semiconductor optical amplifiers at 1.3 μm
C. Meuer, M. Laemmlin, S. Liebich, J. Kim, D. Bimberg, A. Capua, G. Eisenstein, R. Bonk, T. Vallaitis, and J. Leuthold
IEEE Proc. of CLEO/QELSC, San Jose, USA, May 2008 Vol. 1-9 1445 (2008)
78
C6
Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K)
Karachinsky, L.Y., Novikov, II, Y.M. Shernyakov, N.Y. Gordeev, A.S. Payusov, M.V. Maximov, S.S. Mikhrin, M.B. Lifshits, V.A. Shchukin, P.S. Kop'ev, N.N. Ledentsov, and D. Bimberg
Semiconductors 43 (5) 680 (2009)
79
C6
A wavelength conversion scheme based on a quantum-dot semiconductor optical amplifier and a delay interferometer
S. Sygletos, R. Bonk, P. Vorreau, T. Vallaitis, J. Wang, W. Freude, J. Leuthold, C. Meuer, D. Bimberg, R. Brenot, F. Lelarge, G. H. Duan
IEEE Proc. of ICTON, Athens, Greece, 2008 Vol. 2 149 (2008)
80
C6
An interferometric configuration for performing cross-gain modulation with improved signal quality
R. Bonk, P. Vorreau, S. Sygletos, T. Vallaitis, J. Wang, W. Freude, J. Leuthold, R. Brenot, F. Lelarge, G.H. Duan, C. Meuer, S. Liebich, M. Laemmlin, D. Bimberg
Proc. of OFC/NFOEC 2008, San Diego, USA, February 2008
81
C6/ A2/ C1
Characterisation of an InAs quantum dot semiconductor disk laser
P. Schlosser, S. Calvez, J.E. Hastie, S. Jin, T.D. Germann, A. Strittmatter, U.W. Pohl, D. Bimberg, and M.D. Dawson
IEEE Proc. of CLEO/QELSC, San Jose, USA, May 2008 Vol. 1-9 1810 (2008)
82
C6/ B1
InGaAs quantum dot population and polarisation dynamics for ultrafast pulse train amplification
J. Gomis-Bresco, S. Dommers, V. Temnov, U. Woggon, M. Laemmlin, D. Bimberg, E. Malic, M. Richter, E. Schöll, A. Knorr
IEEE Proc. of CLEO/QELSC, San Jose, USA, May 2008 Vol. 1-9 3599 (2008)
83
C6
Slow and fast gain and phase dynamics in a quantum dot semiconductor optical amplifier
T. Vallaitis, C. Koos, R. Bonk, W. Freude, M. Lämmlin, C. Meuer, D. Bimberg, J. Leuthold
Optics Express 16 (1) 170 (2008)
84
C6
Semiconductor quantum dots
D. Bimberg
Chapter 2 in "Optical Fiber Telecommunications V A: Components and Subsystems" (I. Kaminow, T. Li, A. Willner, Eds.) 23 (2008)
85
C6
Single and multiple channel operation dynamics of linear quantum-dot semiconductor optical amplifier
R. Bonk, C. Meuer, T. Vallaitis, S. Sygletos, P. Vorreau, S. Ben-Ezra, S. Tsadka, A. R. Kovsh, I. L. Krestnikov, M. Laemmlin, D. Bimberg, W. Freude, J. Leuthold
Proc. of 34th European Conference on Optical Communication (ECOC 2008), September 21–25, 2008, Brussels, Belgium, paper Th.1.C.2
86
C8 / C1 / B1 / B2
Impact of Coulomb scattering on the ultrafast gain recovery in InGaAs quantum dots
J. Gomis-Bresco, S. Dommers, V.V. Temnov, and U. Woggon, M. Laemmlin, D. Bimberg, E. Malic, M. Richter, E. Schöll, and A. Knorr
Physical Review Letters 101 256803 (2008)

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