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Papers 2010

No.
Project(s)
Title
Authors
Journal
170
A1
Temperature and excitation power dependent photoluminescence intensity of GaInN quantum wells with varying charge carrier wave function overlap
C. Netzel, V. Hoffmann, T. Wernicke, A. Knauer, M. Weyers, M. Kneissl, and N. Szabo
Journal of Applied Physics 107, 033510 (2010)
171
A1
Laser Scribing for Facet Fabrication of InGaN MQW Diode Lasers on Sapphire Substrates
J. R. van Look, S. Einfeldt, V. Hoffmann, A. Knauer, M. Weyers, P. Vogt and M. Kneissl
IEEE Photonics Technology Letters 22 (6), 416 (2010)
172
A1
Optical and Structural Properties of In0.08GaN/In0.02GaN Multiple Quantum Wells Grown at Different Temperatures and with Different Indium Supplies
U. Zeimer, U. Jahn, V. Hoffmann, M. Weyers, M. Kneissl
Journal of Electronic Materials, Vol. 39, 677 (2010)
173
A1
Influence of the wave function overlap in GaInN quantum wells on the temperature and excitation power dependent photoluminescence intensity
C. Netzel, V. Hoffmann, T. Wernicke, A. Knauer, M. Weyers, M. Kneissl, and N. Szabo
Journal of Applied Physics 107, 033510 (2010).
174
A1
Effects of low charge carrier wave function overlap on internal quantum efficiency in GaInN quantum wells
Carsten Netzel, Veit Hoffmann, Tim Wernicke, Arne Knauer, Markus Weyers, Hans Wenzel, and Michael Kneissl
Phys. stat. sol. (c) 7, 1872 (2010)
175
A1
Internal efficiency of InGaN light-emitting diodes: Beyond a quasi-equilibrium model
W. W. Chow, M. H. Crawford and J. Y. Tsao, M. Kneissl
Appl. Phys. Lett. 97, 121105 (2010).
176
A1
Well width study of InGaN multiple quantum well structures for blue-green emitters
V. Hoffmann, C. Netzel, U. Zeimer, A. Knauer, S. Einfeldt, F. Bertram, M. Weyers, G. Tränkle, M. Kneissl
Journal of Crystal Growth
Volume 312, Issue 23, 15 November (2010)
177
A2
Semiconductor Disk Lasers based on Quantum Dots
U. W. Pohl, D. Bimberg
O. G. Okhotnikov (Ed.), Semiconductor Disk Lasers, pp. 187 – 212, Wiley, Weinheim 2010.
178
A2/ C1/ A3/ A4
InAs nanostructures on InGaAsP/InP(001): Interaction of InAs quantum-dash formation with a decomposition of InGaAsP
F. Genz, A. Lenz, H. Eisele, L. Ivanova, R. Timm, U. W. Pohl, M. Dähne, D. Franke, H. Künzel
J. Vac. Sci and Technol. 28 (2010)
179
A2/ C1
Monolithic electro-optically modulated vertical-cavity surface-emitting laser with 10 Gb/s open-eye operation
T. D. Germann, A. Strittmatter, A. Mutig, A. M. Nadtochiy, J. A. Lott, S. A. Blokhin, L. Ya. Karachinsky, V. A. Shchukin, N. N. Ledentsov,  U. W. Pohl, D. Bimberg
Phys. Stat. Sol. C (2010)
180
A2
CW substrate-free metal-cavity surface microemitters at 300 K
C.-Y. Lu, S.-W. Chang, S. L. Chuang, T. D. Germann, U. W. Pohl, D. Bimberg
Semicond. Sci. and Technol. (2010)
181
A2/A4
Atomic structure of buried InAs sub-monolayer depositions in GaAs
A. Lenz, H. Eisele, J. Becker, L. Ivanova, E. Lenz, F. Luckert, K. Pötschke, A. Strittmatter, U.W. Pohl, D. Bimberg, and M. Dähne
Applied Physics Express 3, 105602 (2010)
182
A4
Effect of nitrogen on the InAs/GaAs quantum dot formation
L. Ivanova, H. Eisele, A. Lenz, R. Timm, L. Geelhaar, O. Schumann, H. Riechert, and M. Dähne
Phys. Stat. Sol. (c) 7, 355 (2010)
183
A4
Cross-sectional scanning tunneling microscopy and spectroscopy
of non-polar GaN(1-100) surfaces

H. Eisele, S. Borisova, L.
Ivanova, M. Dähne, and Ph. Ebert
J. Vac. Sci. Technol. B 28, (2010)
184
A4
Direct measurement and analysis of the conduction band density of states in diluted GaAs_1-x N_x alloys
L. Ivanova, H. Eisele, M.P.
Vaughan, Ph. Ebert, A. Lenz, R. Timm, O. Schumann, L. Geelhaar, M.
Dähne, S. Fahy, H. Riechert, and E.P. O’Reilly
Physical Review B 82,
161201(R) (2010).
185
A4/ C1
Confined states of individual type-II GaSb/GaAs quantum rings studied by cross-sectional scanning tunneling spectroscopy
R. Timm, H. Eisele, A. Lenz, L. Ivanova, V. Vossebürger, T. Warming, D. Bimberg, I.
Farrer, D.A. Ritchie, and M. Dähne
Nano Letters 10, 3972 (2010).


186
A5
Experimental investigation and modeling of the fine structure splitting
J. D. Plumhof, V. Křápek, L. Wang, A. Schliwa, D. Bimberg, A. Rastelli, and O. G. Schmidt
Phys. Rev. B 81, 121309 (2010)
187
A5/ C1
Quantum dots for single and entangled photon emitters
Bimberg, D.; Stock, E.; Lochmann, A.; Schliwa, A.; Unrau, W.; Munnix, M.; Rodt, S.; Toropov, A.I.;
Bakarov, A.; Kalagin, A.K.; Haisler, V.A.
Proceedings of the SPIE - The International Society for Optical
Engineering (2010), vol.7610, p. 76100G
188
A5/ C1
Single-photon emission from InGaAs quantum dots grown on (111) GaAs
Stock, E.; Warming, T.; Ostapenko, I.; Rodt, S.; Schliwa, A.; Tofflinger, J.A.; Lochmann, A.; Toropov, A.I.; Moshchenko, S.A.; Dmitriev, D.V.; Haisler, V.A.;
Applied Physics Letters (1 March 2010), vol.96, no.9, p. 093112
189
A5/ C1
Single photon sources based on semiconductor quantum dots
Bimberg, D.; Stock, E.
2010 IEEE Photonics Society Winter Topicals Meeting Series, 2010, p.
190
A5
Optical Imaging of Electrical Carrier Injection into Individual InAs Quantum Dots
Baumgärtner, A., E. Stock, A. Patanè, L. Eaves, M. Henini, and D. Bimberg
Physical Review Letters 105, no. 25 (December 2010): 1-4.
191
A6/ A5/ A2
Large internal dipole moment in InGaN/GaN quantum dots
Ostapenko, Irina a., Gerald Hönig, Christian Kindel, Sven Rodt, André Strittmatter, Axel Hoffmann, and Dieter Bimberg
Applied Physics Letters 97, no. 6 (2010): 063103
192
A6/ A5
Exciton fine-structure splitting in GaN/AlN quantum dots
C. Kindel, S. Kako, T. Kawano, H. Oishi, Y. Arakawa, G. Hoenig, M. Winkelnkemper, A. Schliwa, A. Hoffmann and D. Bimberg
Phys. Ref. B 81, no. 24 (2010): 241309(R).
193
A6
Optical properties of InN grown on templates with controlled surface polarities
Ronny Kirste, Markus R. Wagner, Jan H. Schulze, Andre Strittmatter, Ramon Collazo, Zlatko Sitar, Mustafa Alevli, Nikolaus Dietz and Axel Hoffmann
pss a, (2010)
194
A6
E-MRS 2009 Spring Meeting, Symposium J: Groupe III Nitride Semiconductors
Olivier Briot, Axel Hoffmann, Yasushi Nanishi, Fernando A. Ponce
phys. stat. sol (c) 7, (2010)
195
A6
Strong electron-photon coupling in one-dimensional quantum dot chain: Rabi waves and Rabi wavepackets
G. Ya. Slepyan, Y. D. Yerchak, A. Hoffmann, and F. G. Bass
Phys. Rev. B 81 (2010), 085115
196
A6
Growth temperature - phase stability relation in In1-xGaxN epilayers grown by high-pressure CVD
G. Durkaya, M. Alevli, M. Buegler, R. Atalay, S. Gamage, M. Kaiser, R. Kirste, A. Hoffmann, M. Jamil, I. Ferguson and N. Dietz
Mater. Res. Soc. Symp. Proc. Vol. 1202
197
A6
Size-dependent recombination dynamics in ZnO nanowires
J. S. Reparaz, F. Güell, M. R. Wagner, A. Hoffmann, A. Cornet, J. R. Morante
Appl. Phys. Lett. 96 (2010), 053105
198
A6
Light-matter coupling in nanostructures without an inversion center
O.V. Kibis, G. Ya Slepyan, S. A. Maksimenko, A. Hoffmann
Superlattice and Microstructures 47 (2010), 216
199
B1/ A6
Theory of time-resolved Raman scattering and fluorescence emission from semiconductor quantum dots
Julia Kabuss, Stefan Werner, Axel Hoffmann, Peter Hildebrandt, Andreas Knorr, and Marten Richter
Phys. Rev. B 81, 075314 (2010)
200
B1
A time convolution less density matrix approach to the nonlinear optical response of a coupled system-bath complex
Marten Richter and Andreas Knorr
Ann. Phys. 325, 711 (2010)
201
B1/ B4
Theory of carrier and photon dynamics in quantum dot light emitters
Matthias-René Dachner, Ermin Malic, Marten Richter, Alexander Carmele, Julia Kabuss, Alexander Wilms, Jeong-Eun Kim, Gregor Hartmann, Janik Wolters, Uwe Bandelow, Andreas Knorr
Phys. Status Solidi B 247, 809 (2010)
202
B1/ C4
Theory of Nanophotonic Devices Preface
Andreas Knorr and Jürgen Christen
Phys. Status Solidi B 247, 747 (2010)
203
B1
Antibunching of Thermal Radiation by a Room-Temperature Phonon Bath: A Numerically Solvable Model for a Strongly Interacting Light-Matter-Reservoir System
Alexander Carmele, Marten Richter, Weng W. Chow, and Andreas Knorr
Phys. Rev. Lett. 104, 156801 (2010)
204
B1/B4
Maxwell-Bloch Equation Approach for Describing the Microscopic Dynamics of Quantum-Dot Surface-Emitting Structures
Jeong Eun Kim, Ermin Malic, Marten Richter, Alexander Wilms, and Andreas Knorr
IEEE J. Quantum Electron. 46, 1115 (2010)
205
B1
Theory of few photon dynamics in electrically pumped light emitting quantum dot devices
Alexander Carmele, Matthias-Rene Dachner, Janik Wolters, Marten Richter & Andreas Knorr
Physics and Simulation of Optoelectronic Devices XVIII, SPIE, 2010, 7597, 75971P
206
B1
Formation dynamics of an entangled photon pair: A temperature-dependent analysis
Alexander Carmele, Frank Milde, Matthias-René Dachner, Malek Bagheri Harouni, Rasoul Roknizadeh, Marten Richter, and Andreas Knorr
Phys. Rev. B 81, 195319 (2010)
207
B1/ C8
Analytical description of gain depletion and recovery in quantum dot optical amplifiers
Ermin Malic, Marten Richter, Gregor Hartmann, Jordi Gomis-Bresco, Ulrike Woggon, and Andreas Knorr,
New Journal of Physics 12, 063012 (2010)
208
B1/C1
Photon statistics of a single quantum dot in a microcavity
Yumian Su, Marten Richter, Andreas Knorr, Dieter Bimberg, and Alexander Carmele
Phys. Status Solidi RRL 4, 289 (2010)
209
B1
Fidelity of optically controlled single- and two-qubit operations on Coulomb-coupled quantum dots
Juliane Danckwerts, Andreas Knorr, and Carsten Weber
Phys. Status Solidi B 247, 2147 (2010).
210
B1
Ultrafast double-quantum-coherence spectroscopy of excitons with entangled photons
Marten Richter, Shaul Mukamel
Physical Review A, Nr. 82 (2010)
211
B2
Nonlinear dynamics of doped semiconductor quantum dot
lasers

Kathy Lüdge and Eckehard Schöll
Eur. Phys. J. D 58, 167
(2010)
212
B2
Modeling quantum dot lasers with optical feedback: sensitivity of bifurcation scenarios
Christian Otto, Kathy Lüdge, Eckehard Schöll
phys. stat. sol.(b)
247, 4, 829 (2010)


213
B2
Many-body and nonequilibrium effects on relaxation oscillations in a quantum-dot microcavity laser
Benjamin Lingnau, Kathy Lüdge, Eckehard Schöll, Weng Chow
Appl. Phys. Lett. 97, 11, 111102 (2010)
214
B2
Dynamic many-body and nonequilibrium effects in a quantum dot microcavity laser
Benjamin Lingnau, Kathy Lüdge, Eckehard Schöll,Weng W. Chow
SPIE proceedings, Photonics Europe Brussels
215
B2
Cascading enables ultrafast gain recovery dynamics of quantum dot semiconductor optical amplifiers
Niels Majer, Kathy Lüdge, Eckehard Schöll
Phys. Rev. B 82, 235301 (2010)
216
B2/ C1
Large Signal Response of Semiconductor Quantum-Dot Lasers
K. Lüdge, R. Aust, G. Fiol, M. Stubenrauch, D. Arsenijevic, D. Bimberg, and E. Schöll
IEEE J.Quantum Electron. 46, 12, 1755 (2010)


217
B4
A gradient structure for reaction-diffusion systems and for energy-drift-diffusion systems
A. Mielke
WIAS Preprint 1485, (2010)
218
B4
Hybrid modes in the Fano regime of transport through open quantum dots
E. R. Racec, U. Wulf, P. N. Racec
WIAS Preprint 1504, (2010)
219
B4/ B1
Multi-species modeling of quantum dot lasers with microscopic treatment of Coulomb scattering
U. Bandelow, T. Koprucki, A. Wilms and A. Knorr
Proc. of NUSOD'10,  Paper TuD3, (pp. 59 -60) (2010)
220
B4
Fano regime of transport through open quantum dots
E. R. Racec, U. Wulf, P. N. Racec
Phys. Rev. B 82, 085313 (2010)
221
B4/ C5/ A5
Finite element simulation of the optical modes of semiconductor lasers
Jan Pomplun, Sven Burger, Frank Schmidt, Andrei Schliwa, Dieter Bimberg, Agnieszka Pietrzak, Hans Wenzel, Götz Erbert
Phys. Status Solidi B 4/2010, pp 846-853
222
B5
Hybrid mode-locking in a 40 GHz monolithic quantum dot laser
G. Fiol, D. Arsenijević, D. Bimberg,  A. G. Vladimirov,  M. Wolfrum, E. A. Viktorov,   P. Mandel
Appl. Phys. Lett. 96, 011104 (2010)
223
B5
Spontaneous motion of localized structures and localized patterns induced by delayed feedback
M. Tlidi, A.G. Vladimirov, D. Turaev, G. Kozyreff, D. Pieroux, and T. Erneux
The European Physical Journal D
224
B5
Traveling wave modeling, simulation and analysis of quantum-dot mode-locked semiconductor lasers
M. Radziunas, A. G. Vladimirov and E. A. Viktorov
Proc. SPIE, Vol. 7720, 77200X-1-8.
225
B5/ C1
Locking characteristics of a 40GHz hybrid mode-locked monolithic quantum dot laser
A.G. Vladimirov, M Wolfrum,  G. Fiol, D. Arsenijevic, D. Bimberg, E. Viktorov, P. Mandel, D. Rachinskii
Proc. SPIE, Vol. 7720, 77200Y-1-8 (2010)
226
B5
Traveling wave modeling, simulation and analysis of quantum-dot mode-locked semiconductor lasers
M. Radziunas, A.G. Vladimirov, E.A. Viktorov
WIAS Preprint No. 1506, (2010)
227
C1
Highly temperature-stable modulation characteristics of multi-oxide-aperture high-speed 980 nm vertical cavity surface emitting lasers
A. Mutig, J. Lott, S. Blokhin, P. Wolf, P. Moser, W. Hofmann, A. Nadtochiy, A. Payusov and D. Bimbe
Applied Physics Letters, Vol. 97, Issue 15, 151101 , (2010)
228
C1
1.55 μm High-Speed VCSELs Enabling Error-Free Fiber-Transmission up to 25 Gbit/s
M. Müller, W. Hofmann, A. Nadtochiy, A. Mutig, G. Böhm, M. Ortsiefer, D. Bimberg and M.-C. Amann


IEEE Int. Semiconductor Laser Conf. 2010, WC 3, pp. 156 - 157, Kyoto, Japan, Sept. 2010
229
C1
High-speed 980-nm VCSELs for very short reach optical interconnects
A. Mutig, J. Lott, S. Blokhin, P. Moser, P. Wolf, W. Hofmann, A. Nadtochiy, A. Payusov, and D. Bimberg
IEEE Int. Semiconductor Laser Conf. 2010, WC 4, pp. 158 - 159, Kyoto, Japan, Sept. 2010
230
C2
Room-temperature single-photon sources: design, performance, and applications
Michael Barth, David Höckel, Lars Koch, Stefan Schietinger, Tim Schröder, Thomas Aichele, and Oliver Benson
Proc. SPIE 7681, 76810I (2010)
231
C2
Generalized measurements for optimally discriminating two mixed states and their linear-optical implementation
Ulrike Herzog, Oliver Benson
Journal of Modern Optics 57, 188–197 (2010)
232
C4
Optical investigation of hybrid GaN based microcavity with AlInN/GaN bottom and dielectric top distributed Bragg mirrors
A. Franke, B. Bastek, J. Krimmling, J. Christen, P. Moser, A. Dadgar, A. Krost
Superlattices and Microstructures, available online 15 May 2010, (2010)
234
C4
X-ray Study of Step Induced Lateral Correlation Lengths in Thin AlGaN Nucleation Layers
M. Wieneke, J. Bläsing, A. Dadgar, A. Krost
Japn. J. of Appl. Phys. 49, 025503 (2010)
235
C4
Strain profiling of AlInN/GaN distributed Bragg reflectors using in situ curvature measurements and ex-situ X-ray diffraction
C. Berger, P. Moser, A. Dadgar, J. Bläsing, R. Clos, A. Krost
Materials Science & Engineering A 528, 58 (2010)
236
C4
New technology approaches, Part II: GaN and related alloys on silicon: growth and integration techniques, Chapter 2.
Armin Dadgar
III-V Compound Semiconductor: Integration with Silicon-based Microelectronics, eds.: Tingkai Li, Michael Mastro, and Armin Dadgar, CRC Press (Taylor & Francis), ISBN 978-1439815229 (2010)
237
C4
GaN Based Optical Devices on Silicon
Armin Dadgar
III-V Compound Semiconductor: Integration with Silicon-based Microelectronics, eds.: Tingkai Li, Michael Mastro, and Armin Dadgar Editors, CRC Press (Taylor & Francis), ISBN 978-1439815229 (2010)
238
C4
In situ curvature measurements, strains, and stresses in the case of large wafer bending and multilayers systems
Rainer Clos and Alois Krost
III-V Compound Semiconductor: Integration with Silicon-based Microelectronics, eds.: Tingkai Li, Michael Mastro, and Armin Dadgar Editors, CRC Press (Taylor & Francis), ISBN 978-1439815229 (2010)
239
C4
X-ray characterisation of group III- nitrides
Alois Krost and Jürgen Bläsing
III-V Compound Semiconductor: Integration with Silicon-based Microelectronics, eds.: Tingkai Li, Michael Mastro, and Armin Dadgar Editors, CRC Press (Taylor & Francis), ISBN 978-1439815229 (2010)
240
C4
Strain evaluation in AlInN/GaN Bragg mirrors by in situ curvature measurements and ex sity x-ray grazing incidence and transmission scattering
A. Krost, C. Berger, J. Bläsing, A. Franke, T. Hempel, A. Dadgar, and J. Christen
Appl. Phys. Lett. 97, 181105 (2010)
241
C6/ B5
Hybrid mode-locking in a 40 GHz monolithic quantum dot laser
G. Fiol, D. Arsenijević, D. Bimberg, A. G. Vladimirov, M. Wolfrum, E. A. Viktorov, P. Mandel
Appl. Phys. Lett. 96, 011104 (2010)
242
C6
Complete pulse characterization of quantum-dot mode-locked lasers suitable for optical communication up to 160 Gbit/s
H. Schmeckebier, G. Fiol, C. Meuer, D. Arsenijevic, and D. Bimberg
Optics Express, 18 (4), p. 3415-3425 (2010)
243
C6
Cross-Gain Modulation and Four-Wave Mixing for Wavelength Conversion in Undoped and p-Doped 1.3µm Quantum Dot Semiconductor Optical Amplifiers
C. Meuer, H. Schmeckebier, G. Fiol, D, Arsenijevic, J. Kim, G. Eisenstein, D. Bimberg
IEEE photonics Journal, 2 (2), p. 141-151 (2010)
244
C6
Numerical simulation of temporal and spectral variation of gain  and phase recovery in quantum-dot semiconductor optical amplifiers
J. Kim, C. Meuer, D. Bimberg, and G. Eisenstein
IEEE Journal of Quantum Electronics, 46 (3), pp- 405- 413 (2010)
245
C6
Effect of Inhomogeneously Broadened Linewidth on the Phase Recovery of Quantum-Dot
J. Kim, C. Meuer, D. Bimberg, G. Eisenstein
IEEE Proc. of CLEO/QELSC, San Jose, USA, May 2010 CLEO/QELS Conference, San Jose, California (USA)
246
C7/ C6
80 Gb/s Multi-Wavelength Booster Amplification in an InGaAs/GaAs Quantum-Dot Semiconductor Optical Amplifier
C. Schmidt-Langhorst, C. Meuer, A. Galperin, H. Schmeckebier, R. Ludwig, D. Puris, D. Bimberg, K. Petermann, C. Schubert
Proc. 36th European Conference on Optical Communication (ECOC), September 19-23, 2010, Turin (Italy), paper Mo.1.F.6
247
C7
Novel time-domain model of quantum-dot semiconductor optical amplifiers for wideband optical signals
D. Puris, K. Petermann
Proc. 10th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 6-9 Sept., 2010, Atlanta (USA), paper TuB3
248
C8
Time-resolved amplified spontaneous emission in quantum dots
J. Gomis-Bresco, S. Dommers-Völkel, O. Schöps, Y. Kaptan,  O. Dyatlova, D.
Bimberg, and U. Woggon
Appl. Phys. Lett. 97, 251106 (2010)

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