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Papers 2011

Project(s)
Title
Authors
Journal
A1
Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate [1]
V. Hoffmann, A. Knauer, C. Brunner, S. Einfeldt, M. Weyers, G.Tränkle, K. Haberland, J.-T. Zettler, M. Kneissl
Journal of Crystal Growth 315, Issue 1, 5-9 (2011)
A1
Growth Mechanism of Embedded Self-Organized InN Quantum Dots on GaN (0001) in MOVPE
F. Ivaldi, J. Domagala, S. Kret, Ch. Meissner, M. Pristovsek, M. Högele, and M. Kneissl
Jpn. J. of Appl. Phys. 50, 031004 (2011)
A1
Surface morphology of homoepitaxial GaN grown on non and semipolar GaN substrates
T. Wernicke, S. Ploch, V. Hoffmann, A. Knauer, M. Weyers, and M. Kneissl
phys. stat. sol. (b) 248, 574 (2011)
A1
GaInN quantum well design and measurement conditions affecting the emission energy S-shape
C. Netzel, S. Hatami, V. Hoffmann, T. Wernicke, A. Knauer, M. Kneissl, and M. Weyers
phys. status solidi (c), (2011), DOI 10.1002/pssc.201000956
A1
Single phase {11-22} GaN on (10-10) sapphire grown by metal-organic vapor phase epitaxy
S. Ploch, J. B. Park, J. Stellmach, T. Schwaner, M. Frentrup, T. Niermann, T. Wernicke, M. Pristovsek, M. Lehmann, M. Kneissl
J. Cryst. Growth 331, 25 (2011)
A1
Growth mechanism of InGaN quantum dots during metalorganic vapour phase epitaxy
A. Kadir, C. Meissner, T. Schwaner, M. Pristovsek, and M. Kneissl
J. Cryst. Growth 334, 40 (2011)
A1
Strong charge carrier localization interacting with extensive nonradiative recombination in heteroepitaxially grown m-plane GaInN quantum wells
C. Netzel, C. Mauder, T. Wernicke, B. Reuters, H. Kalisch, M. Heuken, A. Vescan, M. Weyers, M. Kneissl 
Semicond. Sci. Technol. 26, 105017 (2011)
A1
Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy
M. Pristovsek, A. Kadir, Ch. Meissner, T. Schwaner, M. Leyer, M. Kneissl 
J. Appl. Phys. 110 (7) 073527(2011)
A1
Polarization dependent study of gain anisotropy in semipolar InGaN lasers
J. Rass, T. Wernicke, S. Ploch, M. Brendel, A. Kruse, A. Hangleiter, W. Scheibenzuber, U.T. Schwarz, M. Weyers, and M. Kneissl
Appl. Phys. Lett. 99 (17) 171105 (2011)
A1/A4
Single phase {11-22} GaN on (10-10) sapphire grown by metal-organic vapor phase epitaxy
Simon Ploch, Jae Bum Park, Joachim Stellmach, Tilman Schwaner, Martin Frentrup, Tore Niermann, Tim Wernicke, Markus Pristovsek, Michael Lehmann, Michael Kneissl
Journal of Crystal Growth 331, 25-28 (2011)
A2/A3
Effect of the Shape of InAs Nanostructures on the Characteristics of InP-Based Buried Heterostructure Semiconductor Optical Amplifiers [2]
Dieter Franke, Jochen Kreissl, Wolfgang Rehbein, Felix Wenning, Harald Kuenzel, Udo W. Pohl, Dieter Bimberg
Appl. Phys. Express 4 (2011) 014101
A2/A3
Improved threshold of buried heterostructure InAs/GaInAsP quantum dot lasers
D. Franke, M. Moehrle, A. Sigmund, H. Kuenzel, U. W. Pohl, D. Bimberg
J. Appl. Phys. 109, 083104 (2011)
A2/A4
Atomic structure and optical properties of InAs submonolayer depositions in GaAs
A. Lenz, H. Eisele, J. Becker, J.-H. Schulze, T.D. Germann, F. Luckert, K. Pötschke, E. Lenz, L. Ivanova, A. Strittmatter, U.W. Pohl, D. Bimberg, and M. Dähne
J. Vac. Sci. Technol. B 29 (4), 04D104 (2011)
A3/A4
Formation of InAs/InGaAsP quantum dashes
A. Lenz, H. Eisele, F. Genz, L. Ivanova, R. Timm, D. Franke, H. Künzel, U.W. Pohl, and M. Dähne
AIP Conference Proceedings, Volume 1399, pp. 249-250 (2011)
A4
Local estimation of lattice constants in HRTEM images
Tore Niermann, Jae Bum Park, Michael Lehmann
Ultramicroscopy 111, 1083-1092 (2011)
A4
Direct measurement of the band gap and Fermi level position at InN [3]
Ph. Ebert, S. Schaafhausen, A. Lenz, A. Sabitova, L. Ivanova, M. Dähne, Y.-L. Hong, S. Gwo, and H. Eisele
Applied Physics Letters 98, 062103(2011).
A4
Modelling and direct measurement of the density of states in GaAsN [4]
M.P. Vaughan, S. Fahy, E.P. O’Reilly, L. Ivanova, H. Eisele, and M. Dähne
Physica Status Solidi (b) 248, 1167 (2011)
A5
Antimony-based quantum dot memories
D. Bimberg, A. Marent, T. Nowozin, and A. Schliwa 
Proc. SPIE 7947, 79470L (2011)
A5
Auger capture induced carrier heating in quantum dot lasers and amplifiers
A.V. Uskov, C. Meuer, H. Schmeckebier, and D. Bimberg
Applied Physics Express 4, 022202-1 (2011)
A5
Effects of Auger capture induced carrier heating on ultrafast gain dynamics in quantum dots amplifiers
A.V. Uskov, C. Meuer, H. Schmeckebier, D. Bimberg, Y. Chen, and J. Mørk
Proc. of Asia-Pacific Conference (APCOM 2011) DVD-ROM, MOSO3 (2011)
A5
Quantum dots: promises and accomplishments
D. Bimberg and U.W. Pohl
Materials Today 14 (9), 388 (2011)
A5
The excitonic capture path in electrically pumped quantum dots using time-resolved amplified spontaneous emission
J. Gomis-Bresco, S. Dommers-Volkel, O. Schöps, Y. Kaptan, O. Dyatlova, D. Bimberg, and U. Woggon
Proc. of CLEO/Europe 2011, CB_P6 (2011)
A5
Band parameters and strain effects in ZnO and group-III nitrides [5]
Yan, Qimin, Patrick Rinke, M. Winkelnkemper, A. Qteish, D. Bimberg, Matthias Scheffler, and Chris G Van de Walle
Semiconductor Science and Technology 26, no. 1 (January 1, 2011): 014037
A5
Comparison between two types of photonic-crystal
cavities for single-photon emitters [6]
Fan, Wenjuan, Zhibiao Hao, Erik Stock, Jianbin Kang, Yi Luo, and
Dieter Bimberg
Semiconductor Science and Technology 26, no. 1 (January 12, 2011): 014014
A5/A6/B1
Acoustic and optical phonon scattering in a single In(Ga)As quantum dot [7]
[8]
Erik Stock, Matthias- Rene Dachner, Till Warming, Andrei Schliwa, Anatol Lochmann, Axel Hoffmann, Aleksandr I. Toropov, Askhat K. Bakarov, Ilya A. Derebezov, Marten Richter, Vladimir A. Haisler, Andreas Knorr, and Dieter Bimberg
Phys. Rev. B 83, 041304(R) (2011)
A5/C1
High-speed single-photon source based on self-organized quantum dots [9]
Stock, E, W Unrau, A Lochmann, J A Töfflinger, M Öztürk, A I Toropov, A K Bakarov, V A Haisler, and D Bimberg
Semiconductor Science and Technology 26, no. 1 (January 1, 2011): 014003
A5/C2
Experimental optimal maximum-confidence discrimination and optimal unambiguous discrimination of two mixed single-photon states [10]
Steudle, Gesine, Sebastian Knauer, Ulrike Herzog, Erik Stock, Vladimir Haisler, Dieter Bimberg, and Oliver Benson
Physical Review A 83, no. 5 (May 2011)
A6
Decay dynamics of excitonic polarons in InAs/GaAs quantum dots
S. Werner, J. S. Reparaz, M. R. Wagner, P. Zimmer, N. N. Ledentsov, J. Kabuss, M. R. Dachner, M. Richter, A. Knorr, C. Thomsen, and A. Hoffmann
J. Appl. Phys. 110, 074303 (2011)
A6
Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements [11]
G. Callsen, J. S. Reparaz, M. R. Wagner, R. Kirste, C. Nenstiel, A. Hoffmann, and M. R. Phillips
Appl. Phys. Lett. 98, 061906 (2011)
A6
Comment on "Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN" [Phys. Status Solidi A 205, 1872 (2008)]
W. Gehlhoff, B. Salameh, and A. Hoffmann
Physica Status Solidi (a), 208, 1953 (2011)
A6
Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN
R. Kirste, R. Collazo, G. Callsen, M. R. Wagner, T. Kure, J. S. Reparaz, X. Seji, J. Xie, A. Rice, J. Tweedi, Z. Sitar and A. Hoffmann
J. Appl. Phys. 110, 093503 (2011)
B1
Microscopic Description Of Quantum-Dot Vertical-Cavity Surface-Emitting Lasers (VCSELs) Using Maxwell-Bloch Equations
J. E. Kim, E. Malic, M. Richter, A. Wilms, and A. Knorr
AIP Conf. Proc.1399, 1021 (2011)
B1
Analytical solution of the quantum-state tomography of the biexciton cascade in semiconductor quantum dots: Pure dephasing does not affect entanglement
A. Carmele and A. Knorr
Phys. Rev. B. 84, 075328 (2011)
B1
Theory of light scattering from semiconductor quantum dots: Excitation frequency dependent emission dynamics
J. Kabuss and M. Richter
Phot. Nano. Fund. Appl. 9 296 (2011)
B1
Quantum optics in a semiconductor quantum dot
A. Carmele, J. Kabuss, M. Richter, A. Knorr, and W. W. Chow
J. Mod. Opt. 0, 1 (2011)
B1
Photon statistics and phonon signatures in the quantum light emission from semiconductor quantum dots
A. Carmele, J. Kabuss, M. Richter, and A. Knorr
Proc. SPIE 7937, 79371D (2011)
B1
Multidimensional phase-sensitive single-molecule spectroscopy with time-and-frequency-gated fluorescence detection
S. Mukamel and M. Richter
Physical Review A 83, 0138151 (2011)
B1/B2/C6 
Theory of single quantum dot lasers: Pauli-blocking enhanced anti-bunching [12]
Y. Su, A. Carmele, M. Richter, K. Lüdge, E. Schöll, D. Bimberg and A. Knorr
Semicond. Sci. Technol. 26, 014015 (2011)
B1/B2/C8
Nonlinear Gain Dynamics of Quantum Dot Optical Amplifiers [13]
Miriam Wegert, Niels Majer, Kathy Lüdge, Sabine Dommers, Ulrike Woggon, Eckehard Schöll
Semicond. Sci. Technol. 26, 014008 (2011)
B1/B4
Microscopic study of relaxation oscillations in quantum-dot VCSELs
J. E. Kim, M.-R. Dachner, A. Wilms, M. Richter, and E. Malic
Phot. Nano. Fund. Appl. 9 337 (2011)
B1/B4
Influence of ground state correlations on the quantum well intersubband absorption at low temperatures
J. E. Kim, E. Malic, M. Richter, A. Wilms, and A. Knorr
AIP Conf. Proc.1399, 1021 (2011)
B2
Analytic approach to modulation properties of quantum dot lasers [14]
K. Lüdge, E. Schöll, E. A. Viktorov, and T. Erneux
J. Appl. Phys. 109(9), 103112 (2011)
B2
Modeling Quantum Dot based Laser Devices, Nonlinear Laser Dynamics - From Quantum Dots to Cryptography
K. Lüdge
WILEY-VCH Verlag GmbH & Co. KGaA, ISBN 9783527411009, (2011)
B2 / C8
Impact of carrier-carrier scattering and carrier heating on pulse train dynamics of quantum dot semiconductor optical amplifiers [15]
Majer, N.Dommers-Völkel, S. Gomis-Bresco, J.Woggon, U. Lüdge, K. and Schöll, E.
Appl. Phys. Lett. 99, 131102 (2011)
B2
Maxwell-Bloch approach to Four-Wave Mixing in quantum dot semiconductor optical amplifiers [16]
Majer, N.Lüdge, K. and Schöll, E.
in 11th Internat. Conf. on Numerical Simulation of Optical Devices (NUSOD), Rome 2011, edited by J. Piprek, IEEE Proc. 153 (2011)
B2
QD laser tolerance to optical feedback, Nonlinear Laser Dynamics - From Quantum Dots to Cryptography
C. Otto, K. Lüdge, E. A. Viktorov, and T. Erneux
WILEY-VCH, Verlag GmbH & Co. KGaA, ISBN 9783527411009, (2011)
B4/B1
Modeling of quantum dot lasers with microscopic treatment of Coulomb effects
Th. Koprucki, A. Wilms, A. Knorr, and U. Bandelow
Opt. Quantum Electron., 42, 777-783 (2011)
B4
A gradient structure for reaction-diffusion systems and for energy-drift-diffusion systems [17]
A. Mielke
Nonlinearity, 24: 1329-13-46, 2011
B4/B5
Rotational symmetry breaking in small-area circular vertical cavity surface emitting lasers
I. Babushkin, U. Bandelow, and A. G. Vladimirov
Optics Communications 284, 1299-1302 (2011)
B5
Optically injected mode-locked laser
N. Rebrova, G. Huyet, D. Rachinskii, and A. G. Vladimirov
Phys. Rev. E 83, 066202 (2011)
B5
Asynchronism: theory and practice (in Russian)
A.G. Vladimirov, N.A. Grechishkina, V. Kozyakin, N.A. Kuznetsov, A.V. Pokrovskii, D.I. Rachinskii
Information Processes 11, 1-45 (2011)
B5
Relative stability of multipeak localized patterns of cavity solitons
A. G. Vladimirov, R. Lefever, and M. Tlidi
Phys. Rev. E 84, 043848 (2011)
B5/C6
Pulse Broadening in Quantum-Dot Mode-Locked Semiconductor Lasers: Simulation, Analysis, and Experiments
M. Radziunas, A. G. Vladimirov, E. A. Viktorov, G. Fiol, H. Schmeckebier, and D. Bimberg
IEEE J. Quant. Electron. 47, 935-943 (2011)
B5/C6
Strong pulse asymmetry in quantum-dot mode-locked semiconductor lasers
M. Radziunas, A. G. Vladimirov, E. A. Viktorov, G. Fiol, H. Schmeckebier, and D. Bimberg
Appl. Phys. Lett. 98, 031104 (2011)
B8
Optical investigation of a hybrid GaN based microcavity with AlInN/GaN bottom and dielectric top distributed Bragg mirror
A. Franke, B. Bastek, J. Krimmling, J. Christen, P. Moser, A. Dadgar, A. Krost
Superlattices and Microstructures 49, 187-192 (2011)
B8
Crack-Free, Highly Conducting GaN Layers on Si Substrates by Ge Doping
A. Dadgar, J. Bläsing, A. Diez, A. Krost
Applied Physics Express 4, 011001 (2011)
B8
Stranski-Krastanov transition and self-organized structures in low-strained AlInN/GaN multilayer structures
A. Krost, C. Berger, P. Moser, J. Bläsing, A. Dadgar, C. Hums, T. Hempel, B. Bastek, P. Veit, J. Christen
Semiconductor Science and Technology 26, 014041 (2011)
B8
Characterization of AlGaInN layers using X-ray diffraction and fluorescence
L. Groh, C. Hums, J. Bläsing, A. Krost, A. Dadgar
Phys. Stat. Sol. B. 248, 622-626 (2011)
B8
Unintentional doping of a-plane GaN by insertion of in situ SiN mask
H. Witte, M. Wieneke, A. Rohrbeck, K.-M. Guenther, A. Dadgar, A. Krost
J. Phys. D: Appl. Phys. 44, 085102 (2011)
B8
Stress Relaxation in Low-Strain AlInN/GaN Bragg Mirrors
P. Moser, J. Bläsing, A. Dadgar, T. Hempel, J. Christen, A. Krost
Jap. J. of Appl. Phys. 50, 031002 (2011) 
B8
Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AIN around the band edge
G. Rossbach, M. Feneberg, M. Röppischer, C. Werner, N. Esser, C. Cobert, T. Meisch, K. Thonke, A. Dadgar, J. Bläsing, A. Krost
Physical Review B 83, 195202 (2011)
B8
AlxGa1-xN/GaN heterostructures on a thin silicon-on-insulator substrate for metal-semiconductor-metal photodetectors
V.K. Lin, S. Dolmanan, S. Lang Teo, H. Hui Kim, E. Alarcon-Llado, A. Dadgar, A. Krost, S. Tripathy
J. Phys. D: Appl. Phys. 44, 365102 (2011)
B8
Thin-film InGaN/GaN Vertical Light Emitting Diodes Using GaN on Silicon-On-Insulator Substrates
S. Dolmanan, S. Lang Teo, V. Kaixin Lin, H. Kim Hui, A. Dadgar, A. Krost, S. Tripathy
Electrochem. Solid-State Lett. 14, H460-H463 (2011)
B8
Comment on ”The effects of Si doping on dislocation movement and tensile stress in GaN films” [J. Appl. Phys. 109, 073509 (2011)] 
A. Dadgar, A. Krost
J. Appl. Phys. 110, 096101 (2011)
B8
Optical anisotropy of a-plane Al0.8In0.2N grown on an a-plane GaN pseudosubstrate
E. Sakalauskas, M. Wieneke, A. Dadgar, G. Gobsch, A. Krost, R. Goldhahn
Phys. Stat. Sol. A 209, 29-32 (2011)
C1
1550-nm high-speed short-cavity VCSELs
M. Müller, W. Hofmann, T. Gründl, M. Horn, P. Wolf, R.D. Nagel, E. Rönneberg, G. Böhm, D. Bimberg, and M.-C. Amann
IEEE Journal of Selected Topics of Quantum Electronics 17 (5), 1158 (2011)
C1
40 Gbit/s modulation of 1550 nm VCSEL
W. Hofmann, M. Müller, P. Wolf, A. Mutig, T. Gründl, G. Böhm, D. Bimberg and M.-C. Amann
Electronics Letters 47 (4), 270 (2011)
C1
44 Gb/s VCSEL for optical interconnects
W. Hofmann, P. Moser, P. Wolf, A. Mutig ,M. Kroh, D. Bimberg
Proc. of OFC/NFOEC 2011, PDPC5 (2011)
C1
81 fJ/bit energy-to-data ratio of 850 nm vertical-cavity surface-emitting lasers for optical interconnects
P. Moser, W. Hofmann, P. Wolf, J. A. Lott, G. Larisch, A. Payusov, N. N. Ledentsov, and D. Bimberg
Appl. Phys. Lett. 98, 231106 (2011)
C1
83 fJ/bit energy-to-data ratio of 850-nm VCSEL at 17 Gb/s
P. Moser, W. Hofmann, P. Wolf, G. Fiol and D. Bimberg
Proc. of ECOC 2011, Mo.1.LeSaleve.4 (2011)
C1
850 nm optical components for 25 Gb/s optical fiber data communication links over 100 m at 85°C
S. A. Blokhin, J. A. Lott, N. N. Ledentsov, L. Y. Karachinsky, A. G. Kuzmenkov, I. I. Novikov, N. A. Maleev, G. Fiol, and D. Bimberg 
Proc. SPIE: Conference 8308: Optoelectronic Materials and Devices VI (Guang-Hua Duan, Chair) 8308-48 (2011)
C1
980-nm VCSELs for optical interconnects at 25 Gb/s up to 120 °C and 12.5 Gb/s up to 155°C
W. H. Hofmann, P. Moser, A. Mutig, P. Wolf, W. Unrau, D. Bimberg
Proc. of CLEO 2011, CFD3 (2011)
C1
99 fJ/(bit km) energy to data-distance ratio at 17 Gb/s across 1 km of multimode optical fiber with 850-nm single-mode VCSELs
P. Moser, J. A. Lott, P. Wolf, G. Larisch, A. Payusov, N. N. Ledentsov,W. Hofmann, and D. Bimberg
IEEE Photonics Technology Letters 24 (1), 19 (2011)
C1
High speed 980 nm VCSELs for short reach optical interconnects operating error-free at 25 Gbit/s up to 85 °C
A. Mutig, J. A. Lott, S. A. Blokhin, P. Moser, P. Wolf, W. Hofmann, A. Nadtochiy, D. Bimberg
Proc. of CLEO 2011, JTUI89 (2011)
C1
High-speed 850 and 980 nm VCSELs for high-performance computing applications
A. Mutig, P. Moser, J. A. Lott, P. Wolf, W. Hofmann, N. N. Ledentsov, and D. Bimberg
Proc. SPIE: Conference 8308: Optoelectronic Materials and Devices VI (Guang-Hua Duan, Chair) 8308-47 (2011)
C1
High-speed highly temperature stable 980 nm VCSELs operating at 25 Gb/s at up to 85 °C for short reach optical interconnects
A. Mutig, J.A. Lott, S.S. Blokhin, P. Moser, P. Wolf, W. Hofmann, A.M. Nadtochiy, A. Payusov, D. Bimberg
Proc. of SPIE: Conference 7952: Vertical-Cavity Surface-Emitting Lasers XV (James K. Guenter, Chun Lei, Eds.) 79520H (2011)
C1
Metal-cavity surface-emitting microlaser with hybrid metal-DBR reflectors
Chien-Yao Lu, S.L. Chuang, A. Mutig, and D. Bimberg
Optics Letters 36 (13), 2447 (2011)
C1
Modulation characteristics of high-speed and high-temperature stable 980 nm range VCSELs operating error free at 25 Gbit/s up to 85 ◦C
A. Mutig, J.A. Lott, S.A. Blokhin, P. Moser, P. Wolf, W. Hofmann, A.M. Nadtochiy, and D. Bimberg
IEEE Journal of Selected Topics of Quantum Electronics 17 (6), 1568 (2011)
C1
Monolithic electro-optically modulated VCSEL suitable for radio over fibre applications to 20 GHz
Z. Qureshi, M. Crisp, J.D. Ingham, R. Penty, I. White, N. Ledentsov, J.A. Lott, A. Mutig, D. Bimberg
Proc. of OFC/NFOEC 2011, OTuO1 (2011)
C1
Polarization switching and polarization mode hopping in quantum dot vertical-cavity surface-emitting lasers
L. Olejniczak, K. Panajotov, H. Thienpont, M. Sciamanna, A. Mutig, F. Hopfer, D. Bimberg
Optics Express 19 (3), 2476 (2011)
C1
Progress on high-speed 980nm VCSELs for short-reach optical interconnects
A. Mutig and D. Bimberg
Advances in Optical Technologies 29, 0508 (2011)
C1
Theory of metal-cavity surface-emitting microlasers and comparison with experiment
S.W. Chang, C.-Y. Lu, S. L. Chuang, T.D. Germann, U.W. Pohl, and D. Bimberg
IEEE Journal of Selected Topics of Quantum Electronics 17 (6), 1681 (2011)
C1
Green data and computer communication
D. Bimberg 
CD-ROM of the 2011 IEEE Photonic Society's 24th Annual Meeting, IEEE Catalog Number: CFP11LEO-CDR 308 (2011)
C1
Metal-cavity microlasers on silicon
S.L. Chuang, C.-Y. Lu, A. Matsudaira, A. Mutig, and D. Bimberg
CD-ROM of the 2011 IEEE Photonic Society's 24th Annual Meeting, IEEE Catalog Number: CFP11LEO-CDR, 533 (2011)
C1
High speed high temperature stable 980 nm VCSELs operating error-free at 25 Gbit/s up to 85 °C for short reach optical interconnects 
A. Mutig, W. Hofmann, S.A. Blokhin, P. Wolf, P. Moser, A.M. Nadtochiy, D. Bimberg, J.A. Lott
Proc. of OFC/NFOEC 2011, OTuQ3 (2011)
C1
Novel metal-cavity nanolasers at room temperature 
Chien-Yao Lu, S.L. Chuang, T.D. Germann, A. Mutig, D. Bimberg
Proc. of CLEO 2011, JMA4 (2011)
C1
Proc. of CLEO 2011, JMA4 (2011)
N.N. Ledentsov, A.M. Nadtochiy, S.A. Blokhin, P. Wolf, P. Moser, J.A. Lott, V.A. Shchukin, W. Hofmann, D. Bimberg
Proc. of SPIE: Conference 7952: Vertical-Cavity Surface-Emitting Lasers XV (James K. Guenter, Chun Lei, Eds.) 79520J (2011)
C1
Metal-cavity nanolasers - theory and experiment
S.L. Chuang, C.-Y. Lu, S.-W. Chang, T.D. Germann, U.W. Pohl, and D. Bimberg
Proc. of IPRM 2011 (2011)
C1/C2
Experimental optimal maximum-confidence discrimination and optimal unambiguous discrimination of two mixed single-photon states
G. A. Steudle, S. Knauer, U. Herzog, E. Stock, V. A. Haisler, D. Bimberg, and O. Benson
Phys. Rev. A 83, 05030(R), (2011)
C2
An ultrafast quantum random number generator with provably bounded output bias based on photon arrival time measurements
M. Wahl, M. Leifgen, M. Berlin, T. Röhlicke, H.-J. Rahn, O. Benson
Appl. Phys. Lett. 98, 171105 (2011)
C5
Pulse broadening in quantum-dot mode-locked semiconductor lasers: simulation, analysis, and experiments
M. Radziunas, A.G. Vladimirov, E.A. Viktorov, G. Fiol, H. Schmeckebier, and D. Bimberg
IEEE Journal of Quantum Electronics 47 (7), 935 (2011)
C5
Simulations of the optical properties of broad-area edge-emitting semiconductor lasers at 1060 nm based on the PBC laser concept
V.P. Kalosha, K. Posilovic, T. Kettler, V.A. Shchukin, N.N. Ledentsov and D. Bimberg
Semiconductor Science Technology 26, 075014 (2011)
C5
Tilted wave lasers: A way to high brightness sources of light
V. Shchukin, N. Ledentsov, K. Posilovic, V. Kalosha, T. Kettler, D. Seidlitz, M. Winterfeldt, D. Bimberg, N.Yu. Gordeev, L.Ya. Karachinsky, I.I. Novikov, Y.M. Shernyakov, A.V. Chunareva, M.V. Maximov, F. Bugge, and M. Weyers
IEEE Journal of Quantum Electronics 47 (7), 1014 (2011)
C5
Mode-locked quantum-dot lasers
G. Fiol, H. Schmeckebier, C. Meuer, S. Mikhrin, D. Livshits, D. Bimberg
Proc. of IEEE Winter Topicals 2011, 39 (2011)
C5
Quantum-dot semiconductor optical amplifier for filter-assisted 80-Gb/s wavelength conversion
D. Bimberg, H. Schmeckebier, C. Meuer, C. Schmidt-Langhorst, R. Bonk, D. Arsenijević, G. Fiol, A. Galperin, J. Leuthold, J. Li and C. Schubert
Proc. of ICTON 2011, We.B5.4 (2011)
C6
Spontaneous emission study on 1.3 µm InAs/InGaAs/GaAs quantum dot lasers
C.Y. Liu, M. Stubenrauch, and D. Bimberg
Nanotechnology 22, 235202 (2011)
C6
1.3 µm range 40 GHz quantum-dot mode-locked laser under external continuous wave light injection or optical feedback [18]
Fiol, Kleinert, Arsenijevic, Bimberg
Semiconductor Science and Technology, 26 (1), 014006
C6
Strong asymmetry of mode-locking pulses in quantum-dot semiconductor lasers
M. Radziunas, A.G. Vladimirov, E.A. Viktorov, G. Fiol, H. Schmeckebier, and D. Bimberg
Proc. of CLEO/Europe 2011, CB3_5 (2011)
C6
Strong pulse asymmetry in quantum-dot mode-locked semiconductor lasers 
M. Radziunas, A.G. Vladimirov, E.A. Viktorov, G. Fiol, H. Schmeckebier, and D. Bimberg
Appl. Phys. Lett. 98, 031104 (2011)
C6
The input power dynamic range of a semiconductor optical amplifier and its relevance for access network applications
R. Bonk, T. Vallaitis, J. Guetlein, C. Meuer, H. Schmeckebier, D. Bimberg, C. Koos, W. Freude, and J. Leuthold
IEEE Photonics Journal 3 (6), 1039 (2011)
C6
Wavelength conversion of 40-Gb/s NRZ DPSK signals within a 45-nm range using a 1.3 μm quantum-dot semiconductor optical amplifier 
C. Meuer, H. Schmeckebier, C. Schmidt-Langhorst, G. Fiol, D. Arsenijevic, C. Schubert, G. Eisenstein, D. Bimberg
Proc. of ECOC 2011, We10.P1.26 (2011)
C6/C7
Quantum Dot Semiconductor Optical Amplifiers at 1.3 μm for Applications in AllOptical Communication Networks [19]
Holger Schmeckebier, Christian Meuer, Dieter Bimberg, Carsten Schmidt-Langhorst, Andrey Galperin,
Colja Schubert
Semicond. Sci. Technol. 26, 014009 (2011)
C6/C7
40 Gb/s wavelength conversion via four-wave mixing in a quantum-dot semiconductor optical amplifie [20]r
Christian Meuer, Carsten Schmidt-Langhorst, Holger Schmeckebier, Gerrit Fiol, Dejan Arsenijević, Colja Schubert and Dieter Bimberg
Optics Express 19(4), pp. 3788-3798 (2011)
C6/ C7
80 Gb/s wavelength conversion using a quantumdot semiconductor optical amplifier and optical filtering [21]
Christian Meuer, Carsten Schmidt-Langhorst, René Bonk, Holger Schmeckebier, Dejan Arsenijević, Gerrit Fiol, Andrey Galperin, Jürg Leuthold, Colja Schubert and Dieter Bimberg
Optics Express 19(6), pp. 5134-5142 (2011)
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