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Papers 2011
| Project(s) | Title | Authors | Journal |
|---|---|---|---|
| A1 | Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate | V. Hoffmann, A. Knauer, C. Brunner, S. Einfeldt, M. Weyers, G.Tränkle, K. Haberland, J.-T. Zettler, M. Kneissl | Journal of Crystal Growth 315, Issue 1, 5-9 (2011) |
| A1 | Growth Mechanism of Embedded Self-Organized InN Quantum Dots on GaN (0001) in MOVPE | F. Ivaldi, J. Domagala, S. Kret, Ch. Meissner, M. Pristovsek, M. Högele, and M. Kneissl | Jpn. J. of Appl. Phys. 50, 031004 (2011) |
| A1 | Surface morphology of homoepitaxial GaN grown on non and semipolar GaN substrates | T. Wernicke, S. Ploch, V. Hoffmann, A. Knauer, M. Weyers, and M. Kneissl | phys. stat. sol. (b) 248, 574 (2011) |
| A1 | GaInN quantum well design and measurement conditions affecting the emission energy S-shape | C. Netzel, S. Hatami, V. Hoffmann, T. Wernicke, A. Knauer, M. Kneissl, and M. Weyers | phys. status solidi (c), (2011), DOI 10.1002/pssc.201000956 |
| A1 | Single phase {11-22} GaN on (10-10) sapphire grown by metal-organic vapor phase epitaxy | S. Ploch, J. B. Park, J. Stellmach, T. Schwaner, M. Frentrup, T. Niermann, T. Wernicke, M. Pristovsek, M. Lehmann, M. Kneissl | J. Cryst. Growth 331, 25 (2011) |
| A1 | Growth mechanism of InGaN quantum dots during metalorganic vapour phase epitaxy | A. Kadir, C. Meissner, T. Schwaner, M. Pristovsek, and M. Kneissl | J. Cryst. Growth 334, 40 (2011) |
| A1 | Strong charge carrier localization interacting with extensive nonradiative recombination in heteroepitaxially grown m-plane GaInN quantum wells | C. Netzel, C. Mauder, T. Wernicke, B. Reuters, H. Kalisch, M. Heuken, A. Vescan, M. Weyers, M. Kneissl | Semicond. Sci. Technol. 26, 105017 (2011) |
| A1 | Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy | M. Pristovsek, A. Kadir, Ch. Meissner, T. Schwaner, M. Leyer, M. Kneissl | J. Appl. Phys. 110 (7) 073527(2011) |
| A1 | Polarization dependent study of gain anisotropy in semipolar InGaN lasers | J. Rass, T. Wernicke, S. Ploch, M. Brendel, A. Kruse, A. Hangleiter, W. Scheibenzuber, U.T. Schwarz, M. Weyers, and M. Kneissl | Appl. Phys. Lett. 99 (17) 171105 (2011) |
| A1/A4 | Single phase {11-22} GaN on (10-10) sapphire grown by metal-organic vapor phase epitaxy | Simon Ploch, Jae Bum Park, Joachim Stellmach, Tilman Schwaner, Martin Frentrup, Tore Niermann, Tim Wernicke, Markus Pristovsek, Michael Lehmann, Michael Kneissl | Journal of Crystal Growth 331, 25-28 (2011) |
| A2/A3 | Effect of the Shape of InAs Nanostructures on the Characteristics of InP-Based Buried Heterostructure Semiconductor Optical Amplifiers | Dieter Franke, Jochen Kreissl, Wolfgang Rehbein, Felix Wenning, Harald Kuenzel, Udo W. Pohl, Dieter Bimberg | Appl. Phys. Express 4 (2011) 014101 |
| A2/A3 | Improved threshold of buried heterostructure InAs/GaInAsP quantum dot lasers | D. Franke, M. Moehrle, A. Sigmund, H. Kuenzel, U. W. Pohl, D. Bimberg | J. Appl. Phys. 109, 083104 (2011) |
| A2/A4 | Atomic structure and optical properties of InAs submonolayer depositions in GaAs | A. Lenz, H. Eisele, J. Becker, J.-H. Schulze, T.D. Germann, F. Luckert, K. Pötschke, E. Lenz, L. Ivanova, A. Strittmatter, U.W. Pohl, D. Bimberg, and M. Dähne | J. Vac. Sci. Technol. B 29 (4), 04D104 (2011) |
| A3/A4 | Formation of InAs/InGaAsP quantum dashes | A. Lenz, H. Eisele, F. Genz, L. Ivanova, R. Timm, D. Franke, H. Künzel, U.W. Pohl, and M. Dähne | AIP Conference Proceedings, Volume 1399, pp. 249-250 (2011) |
| A4 | Local estimation of lattice constants in HRTEM images | Tore Niermann, Jae Bum Park, Michael Lehmann | Ultramicroscopy 111, 1083-1092 (2011) |
| A4 | Direct measurement of the band gap and Fermi level position at InN | Ph. Ebert, S. Schaafhausen, A. Lenz, A. Sabitova, L. Ivanova, M. Dähne, Y.-L. Hong, S. Gwo, and H. Eisele | Applied Physics Letters 98, 062103(2011). |
| A4 | Modelling and direct measurement of the density of states in GaAsN | M.P. Vaughan, S. Fahy, E.P. O’Reilly, L. Ivanova, H. Eisele, and M. Dähne | Physica Status Solidi (b) 248, 1167 (2011) |
| A5 | Antimony-based quantum dot memories | D. Bimberg, A. Marent, T. Nowozin, and A. Schliwa | Proc. SPIE 7947, 79470L (2011) |
| A5 | Auger capture induced carrier heating in quantum dot lasers and amplifiers | A.V. Uskov, C. Meuer, H. Schmeckebier, and D. Bimberg | Applied Physics Express 4, 022202-1 (2011) |
| A5 | Effects of Auger capture induced carrier heating on ultrafast gain dynamics in quantum dots amplifiers | A.V. Uskov, C. Meuer, H. Schmeckebier, D. Bimberg, Y. Chen, and J. Mørk | Proc. of Asia-Pacific Conference (APCOM 2011) DVD-ROM, MOSO3 (2011) |
| A5 | Quantum dots: promises and accomplishments | D. Bimberg and U.W. Pohl | Materials Today 14 (9), 388 (2011) |
| A5 | The excitonic capture path in electrically pumped quantum dots using time-resolved amplified spontaneous emission | J. Gomis-Bresco, S. Dommers-Volkel, O. Schöps, Y. Kaptan, O. Dyatlova, D. Bimberg, and U. Woggon | Proc. of CLEO/Europe 2011, CB_P6 (2011) |
| A5 | Band parameters and strain effects in ZnO and group-III nitrides | Yan, Qimin, Patrick Rinke, M. Winkelnkemper, A. Qteish, D. Bimberg, Matthias Scheffler, and Chris G Van de Walle | Semiconductor Science and Technology 26, no. 1 (January 1, 2011): 014037 |
| A5 | Comparison between two types of photonic-crystal cavities for single-photon emitters | Fan, Wenjuan, Zhibiao Hao, Erik Stock, Jianbin Kang, Yi Luo, and Dieter Bimberg | Semiconductor Science and Technology 26, no. 1 (January 12, 2011): 014014 |
| A5/A6/B1 | Acoustic and optical phonon scattering in a single In(Ga)As quantum dot | Erik Stock, Matthias- Rene Dachner, Till Warming, Andrei Schliwa, Anatol Lochmann, Axel Hoffmann, Aleksandr I. Toropov, Askhat K. Bakarov, Ilya A. Derebezov, Marten Richter, Vladimir A. Haisler, Andreas Knorr, and Dieter Bimberg | Phys. Rev. B 83, 041304(R) (2011) |
| A5/C1 | High-speed single-photon source based on self-organized quantum dots | Stock, E, W Unrau, A Lochmann, J A Töfflinger, M Öztürk, A I Toropov, A K Bakarov, V A Haisler, and D Bimberg | Semiconductor Science and Technology 26, no. 1 (January 1, 2011): 014003 |
| A5/C2 | Experimental optimal maximum-confidence discrimination and optimal unambiguous discrimination of two mixed single-photon states | Steudle, Gesine, Sebastian Knauer, Ulrike Herzog, Erik Stock, Vladimir Haisler, Dieter Bimberg, and Oliver Benson | Physical Review A 83, no. 5 (May 2011) |
| A6 | Decay dynamics of excitonic polarons in InAs/GaAs quantum dots | S. Werner, J. S. Reparaz, M. R. Wagner, P. Zimmer, N. N. Ledentsov, J. Kabuss, M. R. Dachner, M. Richter, A. Knorr, C. Thomsen, and A. Hoffmann | J. Appl. Phys. 110, 074303 (2011) |
| A6 | Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements | G. Callsen, J. S. Reparaz, M. R. Wagner, R. Kirste, C. Nenstiel, A. Hoffmann, and M. R. Phillips | Appl. Phys. Lett. 98, 061906 (2011) |
| A6 | Comment on "Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN" [Phys. Status Solidi A 205, 1872 (2008)] | W. Gehlhoff, B. Salameh, and A. Hoffmann | Physica Status Solidi (a), 208, 1953 (2011) |
| A6 | Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN | R. Kirste, R. Collazo, G. Callsen, M. R. Wagner, T. Kure, J. S. Reparaz, X. Seji, J. Xie, A. Rice, J. Tweedi, Z. Sitar and A. Hoffmann | J. Appl. Phys. 110, 093503 (2011) |
| B1 | Microscopic Description Of Quantum-Dot Vertical-Cavity Surface-Emitting Lasers (VCSELs) Using Maxwell-Bloch Equations | J. E. Kim, E. Malic, M. Richter, A. Wilms, and A. Knorr | AIP Conf. Proc.1399, 1021 (2011) |
| B1 | Analytical solution of the quantum-state tomography of the biexciton cascade in semiconductor quantum dots: Pure dephasing does not affect entanglement | A. Carmele and A. Knorr | Phys. Rev. B. 84, 075328 (2011) |
| B1 | Theory of light scattering from semiconductor quantum dots: Excitation frequency dependent emission dynamics | J. Kabuss and M. Richter | Phot. Nano. Fund. Appl. 9 296 (2011) |
| B1 | Quantum optics in a semiconductor quantum dot | A. Carmele, J. Kabuss, M. Richter, A. Knorr, and W. W. Chow | J. Mod. Opt. 0, 1 (2011) |
| B1 | Photon statistics and phonon signatures in the quantum light emission from semiconductor quantum dots | A. Carmele, J. Kabuss, M. Richter, and A. Knorr | Proc. SPIE 7937, 79371D (2011) |
| B1 | Multidimensional phase-sensitive single-molecule spectroscopy with time-and-frequency-gated fluorescence detection | S. Mukamel and M. Richter | Physical Review A 83, 0138151 (2011) |
| B1/B2/C6 | Theory of single quantum dot lasers: Pauli-blocking enhanced anti-bunching | Y. Su, A. Carmele, M. Richter, K. Lüdge, E. Schöll, D. Bimberg and A. Knorr | Semicond. Sci. Technol. 26, 014015 (2011) |
| B1/B2/C8 | Nonlinear Gain Dynamics of Quantum Dot Optical Amplifiers | Miriam Wegert, Niels Majer, Kathy Lüdge, Sabine Dommers, Ulrike Woggon, Eckehard Schöll | Semicond. Sci. Technol. 26, 014008 (2011) |
| B1/B4 | Microscopic study of relaxation oscillations in quantum-dot VCSELs | J. E. Kim, M.-R. Dachner, A. Wilms, M. Richter, and E. Malic | Phot. Nano. Fund. Appl. 9 337 (2011) |
| B1/B4 | Influence of ground state correlations on the quantum well intersubband absorption at low temperatures | J. E. Kim, E. Malic, M. Richter, A. Wilms, and A. Knorr | AIP Conf. Proc.1399, 1021 (2011) |
| B2 | Analytic approach to modulation properties of quantum dot lasers | K. Lüdge, E. Schöll, E. A. Viktorov, and T. Erneux | J. Appl. Phys. 109(9), 103112 (2011) |
| B2 | Modeling Quantum Dot based Laser Devices, Nonlinear Laser Dynamics - From Quantum Dots to Cryptography | K. Lüdge | WILEY-VCH Verlag GmbH & Co. KGaA, ISBN 9783527411009, (2011) |
| B2 / C8 | Impact of carrier-carrier scattering and carrier heating on pulse train dynamics of quantum dot semiconductor optical amplifiers | Majer, N., Dommers-Völkel, S. , Gomis-Bresco, J., Woggon, U. , Lüdge, K. and Schöll, E. | Appl. Phys. Lett. 99, 131102 (2011) |
| B2 | Maxwell-Bloch approach to Four-Wave Mixing in quantum dot semiconductor optical amplifiers, | Majer, N., Lüdge, K. and Schöll, E. | in 11th Internat. Conf. on Numerical Simulation of Optical Devices (NUSOD), Rome 2011, edited by J. Piprek, IEEE Proc. 153 (2011) |
| B2 | QD laser tolerance to optical feedback, Nonlinear Laser Dynamics - From Quantum Dots to Cryptography | C. Otto, K. Lüdge, E. A. Viktorov, and T. Erneux | WILEY-VCH, Verlag GmbH & Co. KGaA, ISBN 9783527411009, (2011) |
| B4/B1 | Modeling of quantum dot lasers with microscopic treatment of Coulomb effects | Th. Koprucki, A. Wilms, A. Knorr, and U. Bandelow | Opt. Quantum Electron., 42, 777-783 (2011) |
| B4 | A gradient structure for reaction-diffusion systems and for energy-drift-diffusion systems | A. Mielke | Nonlinearity, 24: 1329-13-46, 2011 |
| B4/B5 | Rotational symmetry breaking in small-area circular vertical cavity surface emitting lasers | I. Babushkin, U. Bandelow, and A. G. Vladimirov | Optics Communications 284, 1299-1302 (2011) |
| B5 | Optically injected mode-locked laser | N. Rebrova, G. Huyet, D. Rachinskii, and A. G. Vladimirov | Phys. Rev. E 83, 066202 (2011) |
| B5 | Asynchronism: theory and practice (in Russian) | A.G. Vladimirov, N.A. Grechishkina, V. Kozyakin, N.A. Kuznetsov, A.V. Pokrovskii, D.I. Rachinskii | Information Processes 11, 1-45 (2011) |
| B5 | Relative stability of multipeak localized patterns of cavity solitons | A. G. Vladimirov, R. Lefever, and M. Tlidi | Phys. Rev. E 84, 043848 (2011) |
| B5/C6 | Pulse Broadening in Quantum-Dot Mode-Locked Semiconductor Lasers: Simulation, Analysis, and Experiments | M. Radziunas, A. G. Vladimirov, E. A. Viktorov, G. Fiol, H. Schmeckebier, and D. Bimberg | IEEE J. Quant. Electron. 47, 935-943 (2011) |
| B5/C6 | Strong pulse asymmetry in quantum-dot mode-locked semiconductor lasers | M. Radziunas, A. G. Vladimirov, E. A. Viktorov, G. Fiol, H. Schmeckebier, and D. Bimberg | Appl. Phys. Lett. 98, 031104 (2011) |
| B8 | Optical investigation of a hybrid GaN based microcavity with AlInN/GaN bottom and dielectric top distributed Bragg mirror | A. Franke, B. Bastek, J. Krimmling, J. Christen, P. Moser, A. Dadgar, A. Krost | Superlattices and Microstructures 49, 187-192 (2011) |
| B8 | Crack-Free, Highly Conducting GaN Layers on Si Substrates by Ge Doping | A. Dadgar, J. Bläsing, A. Diez, A. Krost | Applied Physics Express 4, 011001 (2011) |
| B8 | Stranski-Krastanov transition and self-organized structures in low-strained AlInN/GaN multilayer structures | A. Krost, C. Berger, P. Moser, J. Bläsing, A. Dadgar, C. Hums, T. Hempel, B. Bastek, P. Veit, J. Christen | Semiconductor Science and Technology 26, 014041 (2011) |
| B8 | Characterization of AlGaInN layers using X-ray diffraction and fluorescence | L. Groh, C. Hums, J. Bläsing, A. Krost, A. Dadgar | Phys. Stat. Sol. B. 248, 622-626 (2011) |
| B8 | Unintentional doping of a-plane GaN by insertion of in situ SiN mask | H. Witte, M. Wieneke, A. Rohrbeck, K.-M. Guenther, A. Dadgar, A. Krost | J. Phys. D: Appl. Phys. 44, 085102 (2011) |
| B8 | Stress Relaxation in Low-Strain AlInN/GaN Bragg Mirrors | P. Moser, J. Bläsing, A. Dadgar, T. Hempel, J. Christen, A. Krost | Jap. J. of Appl. Phys. 50, 031002 (2011) |
| B8 | Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AIN around the band edge | G. Rossbach, M. Feneberg, M. Röppischer, C. Werner, N. Esser, C. Cobert, T. Meisch, K. Thonke, A. Dadgar, J. Bläsing, A. Krost | Physical Review B 83, 195202 (2011) |
| B8 | AlxGa1-xN/GaN heterostructures on a thin silicon-on-insulator substrate for metal-semiconductor-metal photodetectors | V.K. Lin, S. Dolmanan, S. Lang Teo, H. Hui Kim, E. Alarcon-Llado, A. Dadgar, A. Krost, S. Tripathy | J. Phys. D: Appl. Phys. 44, 365102 (2011) |
| B8 | Thin-film InGaN/GaN Vertical Light Emitting Diodes Using GaN on Silicon-On-Insulator Substrates | S. Dolmanan, S. Lang Teo, V. Kaixin Lin, H. Kim Hui, A. Dadgar, A. Krost, S. Tripathy | Electrochem. Solid-State Lett. 14, H460-H463 (2011) |
| B8 | Comment on ”The effects of Si doping on dislocation movement and tensile stress in GaN films” [J. Appl. Phys. 109, 073509 (2011)] | A. Dadgar, A. Krost | J. Appl. Phys. 110, 096101 (2011) |
| B8 | Optical anisotropy of a-plane Al0.8In0.2N grown on an a-plane GaN pseudosubstrate | E. Sakalauskas, M. Wieneke, A. Dadgar, G. Gobsch, A. Krost, R. Goldhahn | Phys. Stat. Sol. A 209, 29-32 (2011) |
| C1 | 1550-nm high-speed short-cavity VCSELs | M. Müller, W. Hofmann, T. Gründl, M. Horn, P. Wolf, R.D. Nagel, E. Rönneberg, G. Böhm, D. Bimberg, and M.-C. Amann | IEEE Journal of Selected Topics of Quantum Electronics 17 (5), 1158 (2011) |
| C1 | 40 Gbit/s modulation of 1550 nm VCSEL | W. Hofmann, M. Müller, P. Wolf, A. Mutig, T. Gründl, G. Böhm, D. Bimberg and M.-C. Amann | Electronics Letters 47 (4), 270 (2011) |
| C1 | 44 Gb/s VCSEL for optical interconnects | W. Hofmann, P. Moser, P. Wolf, A. Mutig ,M. Kroh, D. Bimberg | Proc. of OFC/NFOEC 2011, PDPC5 (2011) |
| C1 | 81 fJ/bit energy-to-data ratio of 850 nm vertical-cavity surface-emitting lasers for optical interconnects | P. Moser, W. Hofmann, P. Wolf, J. A. Lott, G. Larisch, A. Payusov, N. N. Ledentsov, and D. Bimberg | Appl. Phys. Lett. 98, 231106 (2011) |
| C1 | 83 fJ/bit energy-to-data ratio of 850-nm VCSEL at 17 Gb/s | P. Moser, W. Hofmann, P. Wolf, G. Fiol and D. Bimberg | Proc. of ECOC 2011, Mo.1.LeSaleve.4 (2011) |
| C1 | 850 nm optical components for 25 Gb/s optical fiber data communication links over 100 m at 85°C | S. A. Blokhin, J. A. Lott, N. N. Ledentsov, L. Y. Karachinsky, A. G. Kuzmenkov, I. I. Novikov, N. A. Maleev, G. Fiol, and D. Bimberg | Proc. SPIE: Conference 8308: Optoelectronic Materials and Devices VI (Guang-Hua Duan, Chair) 8308-48 (2011) |
| C1 | 980-nm VCSELs for optical interconnects at 25 Gb/s up to 120 °C and 12.5 Gb/s up to 155°C | W. H. Hofmann, P. Moser, A. Mutig, P. Wolf, W. Unrau, D. Bimberg | Proc. of CLEO 2011, CFD3 (2011) |
| C1 | 99 fJ/(bit km) energy to data-distance ratio at 17 Gb/s across 1 km of multimode optical fiber with 850-nm single-mode VCSELs | P. Moser, J. A. Lott, P. Wolf, G. Larisch, A. Payusov, N. N. Ledentsov,W. Hofmann, and D. Bimberg | IEEE Photonics Technology Letters 24 (1), 19 (2011) |
| C1 | High speed 980 nm VCSELs for short reach optical interconnects operating error-free at 25 Gbit/s up to 85 °C | A. Mutig, J. A. Lott, S. A. Blokhin, P. Moser, P. Wolf, W. Hofmann, A. Nadtochiy, D. Bimberg | Proc. of CLEO 2011, JTUI89 (2011) |
| C1 | High-speed 850 and 980 nm VCSELs for high-performance computing applications | A. Mutig, P. Moser, J. A. Lott, P. Wolf, W. Hofmann, N. N. Ledentsov, and D. Bimberg | Proc. SPIE: Conference 8308: Optoelectronic Materials and Devices VI (Guang-Hua Duan, Chair) 8308-47 (2011) |
| C1 | High-speed highly temperature stable 980 nm VCSELs operating at 25 Gb/s at up to 85 °C for short reach optical interconnects | A. Mutig, J.A. Lott, S.S. Blokhin, P. Moser, P. Wolf, W. Hofmann, A.M. Nadtochiy, A. Payusov, D. Bimberg | Proc. of SPIE: Conference 7952: Vertical-Cavity Surface-Emitting Lasers XV (James K. Guenter, Chun Lei, Eds.) 79520H (2011) |
| C1 | Metal-cavity surface-emitting microlaser with hybrid metal-DBR reflectors | Chien-Yao Lu, S.L. Chuang, A. Mutig, and D. Bimberg | Optics Letters 36 (13), 2447 (2011) |
| C1 | Modulation characteristics of high-speed and high-temperature stable 980 nm range VCSELs operating error free at 25 Gbit/s up to 85 ◦C | A. Mutig, J.A. Lott, S.A. Blokhin, P. Moser, P. Wolf, W. Hofmann, A.M. Nadtochiy, and D. Bimberg | IEEE Journal of Selected Topics of Quantum Electronics 17 (6), 1568 (2011) |
| C1 | Monolithic electro-optically modulated VCSEL suitable for radio over fibre applications to 20 GHz | Z. Qureshi, M. Crisp, J.D. Ingham, R. Penty, I. White, N. Ledentsov, J.A. Lott, A. Mutig, D. Bimberg | Proc. of OFC/NFOEC 2011, OTuO1 (2011) |
| C1 | Polarization switching and polarization mode hopping in quantum dot vertical-cavity surface-emitting lasers | L. Olejniczak, K. Panajotov, H. Thienpont, M. Sciamanna, A. Mutig, F. Hopfer, D. Bimberg | Optics Express 19 (3), 2476 (2011) |
| C1 | Progress on high-speed 980nm VCSELs for short-reach optical interconnects | A. Mutig and D. Bimberg | Advances in Optical Technologies 29, 0508 (2011) |
| C1 | Theory of metal-cavity surface-emitting microlasers and comparison with experiment | S.W. Chang, C.-Y. Lu, S. L. Chuang, T.D. Germann, U.W. Pohl, and D. Bimberg | IEEE Journal of Selected Topics of Quantum Electronics 17 (6), 1681 (2011) |
| C1 | Green data and computer communication | D. Bimberg | CD-ROM of the 2011 IEEE Photonic Society's 24th Annual Meeting, IEEE Catalog Number: CFP11LEO-CDR 308 (2011) |
| C1 | Metal-cavity microlasers on silicon | S.L. Chuang, C.-Y. Lu, A. Matsudaira, A. Mutig, and D. Bimberg | CD-ROM of the 2011 IEEE Photonic Society's 24th Annual Meeting, IEEE Catalog Number: CFP11LEO-CDR, 533 (2011) |
| C1 | High speed high temperature stable 980 nm VCSELs operating error-free at 25 Gbit/s up to 85 °C for short reach optical interconnects | A. Mutig, W. Hofmann, S.A. Blokhin, P. Wolf, P. Moser, A.M. Nadtochiy, D. Bimberg, J.A. Lott | Proc. of OFC/NFOEC 2011, OTuQ3 (2011) |
| C1 | Novel metal-cavity nanolasers at room temperature | Chien-Yao Lu, S.L. Chuang, T.D. Germann, A. Mutig, D. Bimberg | Proc. of CLEO 2011, JMA4 (2011) |
| C1 | Proc. of CLEO 2011, JMA4 (2011) | N.N. Ledentsov, A.M. Nadtochiy, S.A. Blokhin, P. Wolf, P. Moser, J.A. Lott, V.A. Shchukin, W. Hofmann, D. Bimberg | Proc. of SPIE: Conference 7952: Vertical-Cavity Surface-Emitting Lasers XV (James K. Guenter, Chun Lei, Eds.) 79520J (2011) |
| C1 | Metal-cavity nanolasers - theory and experiment | S.L. Chuang, C.-Y. Lu, S.-W. Chang, T.D. Germann, U.W. Pohl, and D. Bimberg | Proc. of IPRM 2011 (2011) |
| C1/C2 | Experimental optimal maximum-confidence discrimination and optimal unambiguous discrimination of two mixed single-photon states | G. A. Steudle, S. Knauer, U. Herzog, E. Stock, V. A. Haisler, D. Bimberg, and O. Benson | Phys. Rev. A 83, 05030(R), (2011) |
| C2 | An ultrafast quantum random number generator with provably bounded output bias based on photon arrival time measurements | M. Wahl, M. Leifgen, M. Berlin, T. Röhlicke, H.-J. Rahn, O. Benson | Appl. Phys. Lett. 98, 171105 (2011) |
| C5 | Pulse broadening in quantum-dot mode-locked semiconductor lasers: simulation, analysis, and experiments | M. Radziunas, A.G. Vladimirov, E.A. Viktorov, G. Fiol, H. Schmeckebier, and D. Bimberg | IEEE Journal of Quantum Electronics 47 (7), 935 (2011) |
| C5 | Simulations of the optical properties of broad-area edge-emitting semiconductor lasers at 1060 nm based on the PBC laser concept | V.P. Kalosha, K. Posilovic, T. Kettler, V.A. Shchukin, N.N. Ledentsov and D. Bimberg | Semiconductor Science Technology 26, 075014 (2011) |
| C5 | Tilted wave lasers: A way to high brightness sources of light | V. Shchukin, N. Ledentsov, K. Posilovic, V. Kalosha, T. Kettler, D. Seidlitz, M. Winterfeldt, D. Bimberg, N.Yu. Gordeev, L.Ya. Karachinsky, I.I. Novikov, Y.M. Shernyakov, A.V. Chunareva, M.V. Maximov, F. Bugge, and M. Weyers | IEEE Journal of Quantum Electronics 47 (7), 1014 (2011) |
| C5 | Mode-locked quantum-dot lasers | G. Fiol, H. Schmeckebier, C. Meuer, S. Mikhrin, D. Livshits, D. Bimberg | Proc. of IEEE Winter Topicals 2011, 39 (2011) |
| C5 | Quantum-dot semiconductor optical amplifier for filter-assisted 80-Gb/s wavelength conversion | D. Bimberg, H. Schmeckebier, C. Meuer, C. Schmidt-Langhorst, R. Bonk, D. Arsenijević, G. Fiol, A. Galperin, J. Leuthold, J. Li and C. Schubert | Proc. of ICTON 2011, We.B5.4 (2011) |
| C6 | Spontaneous emission study on 1.3 µm InAs/InGaAs/GaAs quantum dot lasers | C.Y. Liu, M. Stubenrauch, and D. Bimberg | Nanotechnology 22, 235202 (2011) |
| C6 | 1.3 µm range 40 GHz quantum-dot mode-locked laser under external continuous wave light injection or optical feedback | Fiol, Kleinert, Arsenijevic, Bimberg | Semiconductor Science and Technology, 26 (1), 014006 |
| C6 | Strong asymmetry of mode-locking pulses in quantum-dot semiconductor lasers | M. Radziunas, A.G. Vladimirov, E.A. Viktorov, G. Fiol, H. Schmeckebier, and D. Bimberg | Proc. of CLEO/Europe 2011, CB3_5 (2011) |
| C6 | Strong pulse asymmetry in quantum-dot mode-locked semiconductor lasers | M. Radziunas, A.G. Vladimirov, E.A. Viktorov, G. Fiol, H. Schmeckebier, and D. Bimberg | Appl. Phys. Lett. 98, 031104 (2011) |
| C6 | The input power dynamic range of a semiconductor optical amplifier and its relevance for access network applications | R. Bonk, T. Vallaitis, J. Guetlein, C. Meuer, H. Schmeckebier, D. Bimberg, C. Koos, W. Freude, and J. Leuthold | IEEE Photonics Journal 3 (6), 1039 (2011) |
| C6 | Wavelength conversion of 40-Gb/s NRZ DPSK signals within a 45-nm range using a 1.3 μm quantum-dot semiconductor optical amplifier | C. Meuer, H. Schmeckebier, C. Schmidt-Langhorst, G. Fiol, D. Arsenijevic, C. Schubert, G. Eisenstein, D. Bimberg | Proc. of ECOC 2011, We10.P1.26 (2011) |
| C6/C7 | Quantum Dot Semiconductor Optical Amplifiers at 1.3 μm for Applications in AllOptical Communication Networks | Holger Schmeckebier, Christian Meuer, Dieter Bimberg, Carsten Schmidt-Langhorst, Andrey Galperin, Colja Schubert | Semicond. Sci. Technol. 26, 014009 (2011) |
| C6/C7 | 40 Gb/s wavelength conversion via four-wave mixing in a quantum-dot semiconductor optical amplifier | Christian Meuer, Carsten Schmidt-Langhorst, Holger Schmeckebier, Gerrit Fiol, Dejan Arsenijević, Colja Schubert and Dieter Bimberg | Optics Express 19(4), pp. 3788-3798 (2011) |
| C6/ C7 | 80 Gb/s wavelength conversion using a quantumdot semiconductor optical amplifier and optical filtering | Christian Meuer, Carsten Schmidt-Langhorst, René Bonk, Holger Schmeckebier, Dejan Arsenijević, Gerrit Fiol, Andrey Galperin, Jürg Leuthold, Colja Schubert and Dieter Bimberg | Optics Express 19(6), pp. 5134-5142 (2011) |