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TU Berlin

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2016


Project(s)
Title
Authors
Journal
A4
Holographic focal series: differences between inline and off-axis electron holography at atomic resolution
Tore Niermann and Michael Lehmann
J. Phys. D: Appl. Phys. 49 (2016) 194002
A5
Nanophononics: State of the art and perspectives (review)
" S. Volz, J. Ordonez-Miranda, A. Shchepetov, M. Prunnila, J. Ahopelto, T. Pezeril, G. Vaudel, V. Gusev, P. Ruello, E. M. Weig, M. Schubert, M. Hettich, M. Grossman, T. Dekorsy, F. Alzina, B. Graczykowsky, E. Chavez-Angel, J. S. Reparaz, M. R. Wagner, C. M. Sotomayor-Torres, S. Xiong, S. Neogi, and D. Donadio"
European Physics Journal B 89, 15 (2016).
A5
Catalytically doped semiconductors for chemical gas-sensing: Aerogel-like aluminium containing zinc oxide materials prepared in the gas-phase
"K. Hagedorn, W. Li, Q. Liang, S. Dilger, M. Noebels, M. R. Wagner, J. S. Reparaz, A. Dollinger, J. Schmedt auf der Günne, T. Dekorsy, L. Schmidt-Mende, and S. Polarz "
Advanced Functional Materials 26, 3424 (2016).
A5
Two-Dimensional Phononic Crystals: Disorder Matters
"M. R. Wagner, B. Graczykowski, J. S. Reparaz, A. El Sachat, M. Sledzinska, F. Alzina, and C. M. Sotomayor Torres "
Nano Letters 16, 5661 (2016).
A5
"Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap "
"F. Nippert, S. Yu. Karpov, G. Callsen, B. Galler, T. Kure, C. Nenstiel, M. R. Wagner, M. Straßburg, H.-J. Lugauer, and A. Hoffmann "
Applied Physics Letters 109, 161103 (2016).
A5
Polarity in GaN and ZnO: Theory, measurements, growth, and devices (invited review)
"J. Zúñiga-Pérez, V. Consonni, L. Lymperakis, X. Kong, A. Trampert, S. Fernández-Garrido, O. Brandt, H. Renevier, S. Keller, K. Hestroffer, M. R. Wagner, J. S. Reparaz, F. Akyol, S. Rajan, S. Rennesson, T. Palacios, and G. Feuillet "
Applied Physics Review 3, 041303 (2016).
A6
Nanoscale Cathodoluminescence of an InGaN Single Quantum Well Intersected by Individual Dislocations
Gordon Schmidt, Peter Veit, Sebastian Metzner, Christoph Berger, Frank Bertram, Armin Dadgar, André Strittmatter, Jürgen Christen
Microscopy and Microanalysis 22, 602 (2016)
A6
Nanoscale Imaging of Structural and Optical Properties Using Helium Temperature Scanning Transmission Electron Microscopy Cathodoluminescence of Nitride Based Nanostructures
Frank Bertram, Marcus Müller, Gordon Schmidt, Peter Veit, Silke Petzold, Steven Albert, Ana María Bengoechea-Encabo, Miguel Ángel Sánchez-Garcia, Enrique Calleja, Jürgen Christen
Microscopy and Microanalysis 22, 600 (2016)
A8
Clustered quantum dots in single GaN islands formed at threading dislocations
Gordon Schmidt, Peter Veit, Christoph Berger, Frank Bertram, Armin Dadgar, André Strittmatter, Jürgen Christen
Japanese Journal of Applied Physics 55, 05FF04 (2016)
A6
Structural and optical nanoscale analysis of GaN core–shell microrod arrays fabricated by combined top-down and bottom-up process on Si(111)
Marcus Müller, Gordon Schmidt, Sebastian Metzner, Peter Veit, Frank Bertram, Sergiy Krylyuk, Ratan Debnath, Jong-Yoon Ha, Baomei Wen, Paul Blanchard, Abhishek Motayed, Matthew R. King, Albert V. Davydov, Jürgen Christen
Japanese Journal of Applied Physics 55, 05FF02 (2016)
A8
Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping
Christoph Berger, Andreas Lesnik, Thomas Zettler, Gordon Schmidt, Peter Veit, Armin Dadgar, Jürgen Bläsing, Jürgen Christen, André Strittmatter
Journal of Crystal Growth 440, 6 (2016)
A6
Nanoscale cathodoluminescene imaging of III-nitride-based LEDs with semipolar quantum wells in a scanning transmission electron microscope
Marcus Müller, Gordon Schmidt, Sebastian Metzner, Peter Veit, Frank Bertram, Robert Anton Richard Leute, Dominik Heinz, Junjun Wang, Tobias Meisch, Ferdinand Scholz, Jürgen Christen
physica status solidi (b) 253, 112 (2016)
A6
Nanoscale cathodoluminescence of stacking faults and partial dislocations in a-plane GaN
Gordon Schmidt, Peter Veit, Matthias Wieneke, Frank Bertram, Armin Dadgar, Alois Krost, Jürgen Christen
physica status solidi (b) 253, 73 (2016)
A6
Nanoscopic Insights into InGaN/GaN Core-Shell Nanorods: Structure, Composition, and Luminescence
Marcus Müller, Peter Veit, Florian F. Krause, Tilman Schimpke, Sebastian Metzner, Frank Bertram, Thorsten Mehrtens, Knut Müller-Caspary, Adrian Avramescu, Martin Strassburg, Andreas Rosenauer, and Jürgen Christen
Nano Lett., 2016, 16 (9), pp 5340–5346
A8
Microscopic nature of crystal phase quantum dots in ultrathin GaAs nanowires by nanoscale luminescence characterization
Bernhard Loitsch, Marcus Müller, Julia Winnerl, Peter Veit, Daniel Rudolph, Gerhard Abstreiter, Jonathan J. Finley, Frank Bertram, Jürgen Christen and Gregor Koblmüller
New J. Phys. 18 (2016) 063009
A6
Direct correlations of structural and optical properties of three-dimensional GaN/InGaN core/shell micro-light emitting diodes
Matin Sadat Mohajerani, Marcus Müller, Jana Hartmann, Hao Zhou, Hergo-H. Wehmann, Peter Veit, Frank Bertram, Jürgen Christen and Andreas Waag
Japanese Journal of Applied Physics 55, 05FJ09 (2016)
A6,A8
Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires
Ž. Gačević, N. Vukmirović, N. García-Lepetit, A. Torres-Pardo, M. Müller, S. Metzner, S. Albert, A. Bengoechea-Encabo, F. Bertram, P. Veit, J. Christen, J. M. González-Calbet, and E. Calleja
PHYSICAL REVIEW B 93, 125436 (2016)
A6
Phosphor-converted white light from blue-emitting InGaN microrod LEDs
Tilman Schimpke, Martin Mandl, Ion Stoll, Bianca Pohl-Klein, Daniel Bichler, Franz Zwaschka, Johanna Strube-Knyrim, Barbara Huckenbeck, Benjamin Max, Marcus Müller, Peter Veit, Frank Bertram, Jürgen Christen, Jana Hartmann, Andreas Waag, Hans-Jürgen Lugauer, and Martin Strassburg
Phys. Status Solidi A 213, No. 6, 1577–1584 (2016)
B1
Efficient and exact numerical approach for many multi-level systems in open system CQED
Gegg Michael, Richter Marten
New J. Phys. 18 043037 (2016)
B1
Purification and switching protocols for dissipatively stabilized entangled qubit states
Hein Sven M., Aron Camille,Türeci Hakan E
Phys. Rev. A 93, 062331 (2016)
B1
Microscopic origins of the terahertz carrier relaxation and cooling dynamics in graphene
Mihnev Momchil T., Kadi Faris, Divin Charles J., Winzer Torben, Lee Seunghyun, Liu Che-Hung, Zhong Zhaohui, Berger Claire, de Heer Walt A., Malic Ermin, Knorr Andreas, Norris Theodore B.
Nature Communications 7, 11617 (2016)
B1
Ultrafast Coulomb-Induced Intervalley Coupling in Atomically Thin WS2
Schmidt Robert, Berghäuser Gunnar, Schneider Robert, Selig Malte, Tonndorf Philipp, Malic Ermin, Knorr Andreas, de Vasconcellos Steffen Michaelis, Bratschitsch Rudolf
Nano Lett., 2016, 16 (5), pp 2945– 2950 (2016)
B1
Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides
Selig Malte, Berghäuser Gunnar, Raja Archana, Nagler Philipp, Schüller Christian, Heinz Tony F., Korn Tobias, Chernikov Alexey, Malic Ermin, Knorr Andreas
Nature Communications 7, 13279 (2016)
B2, A7, A2
Strong amplitude-phase coupling in submonolayer quantum dots
Herzog, B., Lingnau, B., Kolarczik, M., Kaptan, Y. , Bimberg, D. , Maaßdorf , A., Pohl, U. W. , Rosales, R. , Schulze, J.-H., Strittmatter, A. , Weyers, M., Woggon, U. , Lüdge, K. and Owschimikow, N.,
Appl. Phys. Lett. 109, 201102 (2016)
B2, A7
Ultrafast gain recovery and large nonlinear optical response in submonolayer quantum dots,
 Lingnau, B., Lüdge, K. , Herzog, B., Kolarczik, M., Kaptan, Y. , Woggon, U. and Owschimikow, N.,
Phys. Rev.~B 94, 1, 014305 (2016). 
B2
Suppression of Noise-Induced Modulations in Multidelay Systems
 Jaurigue, L . C., Schöll, E. and Lüdge, K. ,
Phys. Rev. Lett. 117, 154101 (2016).
B4
"Gradient structures for optoelectronic models of semiconductors"
"Mielke, Alexander and Peschka, Dirk and Rotundo, Nella and Thomas, Marita"
Proceedings of ECMI 2016
B4
"An entropic gradient structure for {L}indblad equations and {GENERIC} for quantum systems"
Mittnenzweig, Markus and Mielke, Alexander
J. Stat. Physics (2016)
B4
Robustness analysis of a device concept for edge-emitting lasers based on strained germanium
D. Peschka, M. Thomas, A. Glitzky, R. Nürnberg, M. Virgilio, S. Guha, T. Schroeder, G. Capellini, Th. Koprucki
Opt. Quantum Electron., 48:156 (2016)
B4
Numerical simulation of carrier transport in semiconductor devices at cryogenic temperatures
M. Kantner, Th. Koprucki
Opt. Quantum Electron, 48:543 (2016)
B4
Modeling and simulation of injection dynamics for quantum dot based single-photon sources
M. Kantner, U. Bandelow, Th. Koprucki, H.-J. Wünsche
Proceedings of the 16th International Conference on Numerical Simulation of Optoelectronic Devices, J. Piprek, Ch. Poulton, M. Steel, M. DE Sterke, eds., IEEE Conference Publications Management Group, Piscataway, 2016, pp. 219--220.
B4
On current injection into single quantum dots through oxide-confined PN-diodes
M. Kantner, U. Bandelow, Th. Koprucki, J.-H. Schulze, A. Strittmatter, H.-J. Wünsche
Proceedings of the 16th International Conference on Numerical Simulation of Optoelectronic Devices, J. Piprek, Ch. Poulton, M. Steel, M. DE Sterke, eds., IEEE Conference Publications Management Group, Piscataway, 2016, pp. 215--216.
B4
Error estimates in weighted Sobolev norms for finite element immersed interface methods
L. Heltai, N. Rotundo
WIAS-Preprint no. 2323, WIAS, Berlin, 2016.
B4
Gradient structure for optoelectronic models of semiconductors
A. Mielke, D. Peschka, N. Rotundo, M. Thomas
WIAS-Preprint no. 2317, WIAS, Berlin, 2016.
B4
Numerical methods for drift-diffusion models
P. Farrell, N. Rotundo, D.H. Doan, M. Kantner, J. Fuhrmann, Th. Koprucki
WIAS-Preprint no. 2263, WIAS, Berlin, 2016.
B5
Locally enhanced and tunable optical chirality in helical metamaterials
P. Gutsche, R. Mäusle, S. Burger
Photonics 3, 60 (2016)
B6
Tailoring local optical chirality in helical metamaterials
P. Gutsche, R. Mäusle, S. Burger
IEEE Proc. 10th Int. Congr. Metamaterials (2016).
B4,A2,A7,C12
Bright Single-Photon Sources Based on Anti-Reflection Coated Deterministic Quantum Dot Microlenses
P. Schnauber, A. Thoma, V. Heine, A. Schlehahn, L. Gantz, M. Gschrey, R. Schmidt, C. Hopfmann, B. Wohlfeil, J.-H. Schulze, A. Strittmatter, T. Heindel, S. Rodt, U. Woggon, D. Gershoni, S. Reitzenstein, Stephan
Technologies 4, 1 (2016)
A2, B4
Efficient Current Injection Into Single Quantum Dots Through Oxide-Confined p-n-Diodes
M. Kantner, U. Bandelow, Th. Koprucki, J.-H. Schulze, A. Strittmatter, H.-J. Wünsche,
IEEE Trans. Electron Devices, 63 (2016), pp. 2036-2042.
B5
Robust homoclinic orbits in planar systems with Preisach hysteresis operator
A. Pimenov, D. Rachinskii
Journal of Physics: Conference Series 727 (1), 012012 (2016)
B5
Memory and adaptive behavior in population dynamics: anti-predator behavior as a case study
A. Pimenov, T. C. Kelly, A. Korobeinikov, M. J. A. O’Callaghan, D. Rachinskii
Journal of Mathematical Biology, 1-27 (2016)
B5
Coupled spatial multimode solitons in microcavity wires
G. Slavcheva, A. V. Gorbach, A. Pimenov
Physical Review B 94 (24), 245432 (2016)
B5
Delay differential models in multimode laser dynamics: taking chromatic dispersion into account
A. G. Vladimirov, G. Huyet, A. Pimenov
SPIE Photonics Europe, 98920I-98920I-7 (2016)
B5
Coherence properties of fast frequency swept lasers revealed via full electric field reconstruction
Th. Butler, D. Goulding, S. Slepneva, B. O'Shaughnessy, B. Kelleher, S.P. Hegarty, H.Ch. Lyu, K. Karnowski, M. Wojtkowski, A.G. Vladimirov, G. Huyet
Physics and Simulation of Optoelectronic Devices XXIV, B. Witzigmann, M. Osiński, Y. Arakawa, eds., 9742, Proceedings of SPIE, Bellingham, Washington, pp. 97420K/1--97420K/7 (2016)
B5
Interaction of spatial and temporal cavity solitons in mode-locked lasers and passive cavities
D. Turaev, A. G. Vladimirov, S. Zelik
Laser Optics (LO), 2016 International Conference, IEEE, New York, pp. 37628 (2016)
B5
Impact of time-delayed feedback on spatiotemporal dynamics in the Lugiato-Lefever model
K. Panajotov, D. Puzyrev, A.G. Vladimirov, S.V. Gurevich, M. Tlidi
Physical Review A 93, 043835/1-043835/7 (2016)
B5
Modulational instability and zigzagging of dissipative solitons induced by delayed feedback
D. Puzyrev, A.G. Vladimirov, S.V. Gurevich, S. Yanchuk
Physical Review A 93, 041801/1-041801/5 (2016)
C1
Numerical model of capacitance in vertical-cavity surface-emitting lasers
M. Wasiak, P. Śpiewak, P. Moser, J. Walczak, R. P. Sarzała, T. Czyszanowski, and J. A. Lott
Journal of Physics D: Applied Physics vol. 49, no.17, 175104 (24 March 2016)
C1
Optimal parameters of monolithic high-contrast grating mirrors
M. Marciniak, M. Gębski, M. Dems, E. Haglund, A. Larsson, M. Riaziat, J. A. Lott, and T. Czyszanowski
Optics Letters vol. 41, no. 15, pp. 3495-3498 (01 August 2016)
C1
Impact of photon lifetime on the temperature stability of 50 Gb/s 980 nm VCSELs
G. Larisch, P. Moser, J. A. Lott, and D. Bimberg
IEEE Photonics Technology Letters vol. 28, no. 21, pp. 2327-2330 (01 November 2016)
C2
A folded‑sandwich polarization‑entangled two‑color photon pair source with large tuning capability for applications in hybrid quantum systems
Otto Dietz, Chris Müller, Thomas Kreißl, Ulrike Herzog, Tim Kroh, Andreas Ahlrichs, Oliver Benson
Appled Physics B Appl. Phys. B (2016) 122:33
C2
Bright source of indistinguishable photons based on cavity-enhanced parametric down-conversion utilizing the cluster effect
Andreas Ahlrichs and Oliver Benson
Applied Physics Letters Applied Physics Letters 108, 021111 (2016)
C9
Determination of Polarization Fields in Group III-Nitride Heterostructures by Capacitance-Voltage-Measurements
Monir Rychetsky, Ingrid Koslow, Baran Avinc, Jens Rass, Tim Wernicke, Konrad Bellmann, Luca Sulmoni, Veit Hoffmann, Markus Weyers, Johannes Wild, Josef Zweck, Bernd Witzigmann, Michael Kneissl
Journal of Applied Physics 119 (9), 095713 (2016)
C9
Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN
A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Weyers and M. Kneissl
phys. stat. sol. (b) 253 (5), 809-813 (2016)
C9
Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes,
M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, M. Kneissl
Appl. Phys. Lett. 108, 151108 (2016)
C9
Electronic properties of Si-doped AlxGa1-xN with aluminum mole fraction above 80%,
F. Mehnke, X. T. Trinh, H. Pingel, T. Wernicke, E. Janzén, N. T. Son, and M. Kneissl
Journal of Applied Physics 120, 145702 (2016)
C9
III-Nitride Ultraviolet Emitters - Technology & Applications
M. Kneissl, J Rass
Series on Material Science, Vol. 227, 1-26, Cham, Heidelberg, New York, London: Springer (2016)
C9
Influence of the LED heterostructure on the degradation behavior of (InAlGa) N-based UV-B LEDs
Johannes Glaab, Neysha Lobo Ploch, Jens Rass, Tim Kolbe, Tim Wernicke, Frank Mehnke, Christian Kuhn, Johannes Enslin, Christoph Stoelmacker, Viola Kueller, Arne Knauer, Sven Einfeldt, Markus Weyers, Michael Kneissl
Proc. of SPIE 9748, 97481O-1 (2016).
C9
Efficient carrier‐injection and electron‐confinement in UV‐B light‐emitting diodes
T Kolbe, J Stellmach, F Mehnke, M‐A Rothe, V Kueller, A Knauer, S Einfeldt, T Wernicke, M Weyers, M Kneissl
physica status solidi (a) 213, 210 (2016)
C9
Impact of acceptor concentration on the resistivity of Ni/Au p‐contacts on semipolar (20–21) GaN: Mg
M Rychetsky, IL Koslow, T Wernicke, J Rass, V Hoffmann, M Weyers, M Kneissl
physica status solidi (b) 253, 169 (2016)
C9
Temperature and doping dependent changes in surface recombination during UV illumination of (Al)GaN bulk layers
C. Netzel, J. Jeschke, F. Brunner, A. Knauer, and M. Weyers
J. Appl. Phys., vol. 120, no. 9, pp. 095307 (2016).
C9
AlN growth on nano-patterned sapphire: A route for cost efficient pseudo substrates for deep UV LEDs
S. Hagedorn, A. Knauer, A. Mogilatenko, E. Richter, and M. Weyers
phys. stat. sol. (a), vol. 213, no. 12, pp. 3178-3185 (2016).
C9
Kinetics of AlGaN metal-organic vapor phase epitaxy for deep-UV applications
A. Lobanova, E. Yakovlev, J. Jeschke, A. Knauer, and M. Weyers
Jpn. J. Appl. Phys., vol. 55, no. 5S, 05FD07 (2016)
C10
Monolithically Integrated High-Extinction-Ratio MZM With a Segmented Driver in Photonic BiCMOS
Despoina Petousi, Pedro Rito, Stefan Lischke, Dieter Knoll, Iria Garcia-Lopez, Marcel Kroh, Rainer Barth, Christian Mai, Ahmet-Cagri Ulusoy, Anna Peczek, Georg Winzer, Karsten Voigt, Dietmar Kissinger, Klaus Petermann, Lars Zimmermann
IEEE Photonics Technology Letters, Volume: 28, Issue: 24, 2016
C10
Comparison of the Jitter Performance of different Photonic Sampling Techniques
Edgar Krune; Benjamin Krueger; Lars Zimmermann; Karsten Voigt; Klaus Petermann
IEEE Journal of Lightwave Technology, Volume: 34, Issue: 4, 2016
C12, A2
Generating single photons at gigahertz modulation-speed using electrically controlled quantum dot microlenses
A. Schlehahn, R. Schmidt, C. Hopfmann, J.-H. Schulze, A. Strittmatter, T. Heindel, L. Gantz, E. R. Schmidgall, D. Gershoni, and S. Reitzenstein
Appl. Phys. Lett. 108, 021104 (2016)
C12, A2, B1
Exploring Dephasing of a Solid-State Quantum Emitter via Time- and Temperature-Dependent Hong-Ou-Mandel Experiments
A. Thoma, P. Schnauber, M. Gschrey, M. Seifried, J. Wolters, J.-H. Schulze, A. Strittmatter, S. Rodt, A. Carmele, A. Knorr, T. Heindel, and S. Reitzenstein
Phys. Rev. Lett. 116, 033601 (2016)
C12
Using low-contrast negative-tone PMMA at cryogenic temperatures for 3D electron beam lithography
P. Schnauber, R. Schmidt, A. Kaganskiy, T. Heuser, M. Gschrey, S. Rodt and S. Reitzenstein
Nanotechnology 27, 195301 (2016)
C12, B2
Mode-switching induced super-thermal bunching in quantum-dot microlasers
C. Redlich, B. Lingnau, S. Holzinger, E. Schlottmann, S. Kreinberg, C. Schneider, M. Kamp, S. Höfling, J. Wolters, S. Reitzenstein, and K. Lüdge
New J. Phys. 18, 063011 (2016)
C12, B2
Injection Locking of Quantum-Dot Microlasers Operating in the Few-Photon Regime
E. Schlottmann, S. Holzinger, B. Lingnau, K. Lüdge, C. Schneider, M. Kamp, S. Höfling, J. Wolters, and S. Reitzenstein
Phys. Rev. Applied 6, 044023 (2016)
C12, B1
Cavity assisted emission of single, paired and heralded photons from a single quantum dot device
S. C. Kuhn, A. Knorr, S. Reitzenstein, and M. Richter
Opt. Expr. 24, 25446 (2016)
C12, A2
Impact of Phonons on Dephasing of Individual Excitons in Deterministic Quantum Dot Microlenses
T. Jakubczyk, V. Delmonte, S. Fischbach, D. Wigger, D. E. Reiter, Q. Mermillod, P. Schnauber, A. Kaganskiy, J.-H. Schulze, A. Strittmatter, S. Rodt, W. Langbein, T. Kuhn, S. Reitzenstein, and J. Kasprzak
ACS Photon. 3, 2461 (2016)
A5
Quantum dot lattice as nano-antenna for collective spontaneous emission
S. Mokhlespour, J. E. M. Haverkort, G. Y. Slepyan, S. A. Maksimenko, A. Hoffmann
Fundamental and Applied Nano-Electromagnetics, Part oft he series Nato Science for Peace and Security Series B: Physics and Biophysics, (2016) pp 69-88
A5
Infrared nanoscopy of In-rich InGaN epilayers
Daniel Seidlitz, Alireza Fali, Indika S. Matara Kankanamge, Dorian Alden, Ramon Collazo, Axel Hoffmann, Nikolaus Dietz, Yohannes Abate
Proc. SPIE 9954, Fifteenth International Conference on Solid State Lighting and LED-based Illumination Systems, 995408 (November 2, 2016)
A5
Intrinsic electronic properties of high-quality wurtzite InN
"H. Eisele, J. Schuppang, M. Schnedler, M. Duchamp, C. Nenstiel, V. Portz, T. Kure, M. Bügler, A. Lenz, M. Dähne, A. Hoffmann, S. Gwo, S. Choi, J. S. Speck, R. E. Dunin-Borkowski, Ph. Ebert "
Phys. Rev. B 94 (2016), 24520
A5
Shielding electrostatic fields in polar semiconductor nanostructures
G. M. O. Hönig, S. Westerkamp, A. Hoffmann, G. Callsen
arXiv preprint arXiv:1602.06745
A5
Investigation of proton damage in III-V semiconductors by optical spectroscopy
E. Yaccuzzi, S. Khachadorian, S. Suárez, M. Reinoso, A. R. Goñi, A. Strittmatter, A. Hoffmann, P. Giudici

J. Appl. Phys. 119 (2016), 235702
A5
Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001)
"E. M. Sala, G. Stracke, S. Selve, T. Niermann, M. Lehmann, S. Schlichting, F. Nippert, G. Callsen, A. Strittmatter, D. Bimberg l "
Appl. Phys. Lett. 109 (2016), 102102
A6
Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence
Felix Nippert, Sergey Karpov, Ines Pietzonka, Bastian Galler, Alexander Wilm, Thomas Kure, Christian Nenstiel, Gordon Callsen, Martin Straßburg, Hans-Jürgen Lugauer , Axel Hoffmann
Japanese Journal of Applied Physics 55 (2016), 05FJ01
A6
"Evaluation of local free carrier concentrations in individual heavily-doped GaN:Si microrods by micro-Raman spectroscopy "
"M. S. Mohajerani, S. Khachadorian, T. Schimpke, C. Nenstiel, J. Hartmann, J. Ledig, A. Avramescu, M. Strassburg, A. Hoffmann and A. Waag 
"
Appl. Phys. Lett. 108, 091112 (2016)
A6
Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy
Tobias Wecker, Gordon Callsen, Axel Hoffmann, Dirk Reuter and Donat J. As
Japanese Journal of Applied Physics 55 (2016), 5S05FG01
A6
Estimation of free carrier concentrations in high-quality heavily doped GaN:Si micro-rods by photoluminescence and Raman spectroscopy
"M. S. Mohajerani, S. Khachadorian, C. Nenstiel, T. Schimpke, A. Avramescu, M. Strassburg, A. Hoffmann, A. Waag "
Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 976803 (March 8, 2016)
A6
Thresholdless lasing of nitride nanobeam cavities
Stefan T. Jagsch, Noelia Vico Triviño, Gordon Callsen, Stefan Kalinowski, Ian M. Rousseau, Jean-François Carlin, Raphaël Butté, Axel Hoffmann, Nicolas Grandjean, Stephan Reitzenstein
arXiv preprint (2016)
A6
On the Origin of the 4.7 eV Absorption and 2.8 eV Emission Bands in Bulk AlN Substrates
Dorian Alden, Zachary Bryan, Benjamin Gaddy, Isaac Bryan, Gordon Callsen, Akinori Koukitu, Yoshinao Kumagai, Axel Hoffmann, Doug Irving, Zlatko Sitar and Ramon Collazo
CS Trans. 2016 72(5): 31-40
A6
Polarization-induced confinement of continuous hole-states in highly pumped industrial-grade, green InGaN quantum wells
"Felix Nippert, Anna Nirschl, Tobias Schulz, Gordon Callsen, Ines Pietzonka, Steffen Westerkamp, Thomas Kure, Christian Nenstiel, Martin Strassburg, Martin Albrecht, Axel Hoffmann "
J. Appl. Phys. 119 (2016), 215707
A6
Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications
"D. Alden, W. Guo, R. Kirste, F. Kaess, I. Bryan, T. Troha, A. Bagal, P. Reddy, Luis H. Hernandez-Balderrama, A. Franke, S. Mita, C.-H. Chang, A. Hoffmann, M. Zgonik, R. Collazo, Z. Sitar "
Appl. Phys. Lett. 108 (2016), 261106
A6
Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy
"Stefan Freytag, Martin Feneberg, Christoph Berger, Jürgen Bläsing, Armin Dadgar, Gordon Callsen, Felix Nippert, Axel Hoffmann, Pavel Yu Bokov, Rüdiger Goldhahn"
J. Appl. Phys. 120 (2016), 015703
A6
"Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition "
"Felix Kaess, Seiji Mita, Jingqiao Xie, Pramod Reddy, Andrew Klump, Luis H. Hernandez-Balderrama, Shun Washiyama, Alexander Franke, Ronny Kirste, Axel Hoffmann, Ramón Collazo, Zlatko Sitar "
J. Appl. Phys. 120 (2016), 105701
A6
Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap
Felix Nippert, Sergey Yu. Karpov, Gordon Callsen, Bastian Galler, Thomas Kure, Christian Nenstiel, Markus R. Wagner, Martin Straßburg, Hans-Jürgen Lugauer, Axel Hoffmann
Appl. Phys. Lett. 109 (2016), 161103
A6
The effect of illumination power density on carbon defect configuration in silicon doped GaN
Felix Kaess, Pramod Reddy, Dorian Alden, Andrew Klump, Luis H. Hernandez-Balderrama, Alexander Franke
J. Appl. Phys. 120 (2016), 4972468

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